3300V高压平面栅SiCMOSFET
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时代电气:当前公司SiC第四代沟槽栅产品已完成设计定型
Zheng Quan Ri Bao Zhi Sheng· 2026-01-16 15:08
Core Viewpoint - The company has completed the design and development of its fourth-generation SiC trench gate products, achieving industry-leading standards, and has also laid out its fifth-generation SiC technology [1] Product Development - The key SiC products include 3300V high-voltage planar gate SiCMOSFET, 1200V fine planar gate SiCMOSFET, and 1200V SBD, with the performance metrics of the 1200V trench gate SiCMOSFET being comparable to leading international companies [1] Voltage Range and Applications - The company's SiCMOSFET covers a voltage range from 650V to 6500V, suitable for high-frequency and high power density system requirements, with applications in electric vehicles, uninterruptible power supplies (UPS), wind power generation, photovoltaic inverters, railway transportation, industrial sectors, and smart grids [1]