Group 1 - The conference "Electric Transportation & Digital Energy SiC Technology Application and Supply Chain Upgrade Conference" will be held in Shanghai, featuring key industry players including TianKe HeDa, Mitsubishi Electric, and STMicroelectronics [2][3][5] - TianKe HeDa's CTO Liu Chunjun will present on the progress of 8-inch SiC substrates and epitaxy technology, highlighting the company's breakthroughs in silicon carbide materials [3][4] - The report will focus on the industrialization progress of 8-inch conductive SiC substrates and key process breakthroughs in 8-inch conductive epitaxy technology, including optimized substrate thickness and defect control [4] Group 2 - TianKe HeDa aims to achieve small-scale production of 8-inch conductive substrates and epitaxy by 2024, with substrate thickness optimized to 350μm, supporting cost reduction for high-voltage devices [4] - The company has made significant advancements in defect control, addressing industry challenges such as polytype defects and dislocation clusters, ensuring reliability for automotive-grade devices [4] - The conference will also feature discussions on core challenges and innovative breakthroughs in the industrialization process of silicon carbide technology, with dedicated sessions on digital energy and electric transportation applications [4][5]

插播： 5月15日，"电动交通&数字能源SiC技术应用及供应链升级大会"活动将在上海举办， 三菱电机、意法半导体、Wolfspeed、三安半导体、天科合达、元山电子、大族半导 体、香港大学、长飞先进、宏微科技、利普思、国基南方、芯长征、合盛新材料、 国瓷功能材 料 等将出席本次会议，点击文章底部 "阅读原文" 即可报名参会。 近日， "行家说三代半"发现茂硅、谱析光晶、鬃晶科技等企业接连传来产线落地、园区入驻等消息，为 SiC产业链注入新动力 ： 茂硅： SiC制程产线即将投产，产能达3000片/月 4 月 23日 ， 据 中国台湾媒体 报道， 中国 台湾晶圆代工厂茂硅透露，预计于今年 6月底完成碳化硅制程产线建设，并于下半年开启试量产，月产能达 3000片 。未来，茂硅将根据市场需求，持续购置相关设备，逐步扩大生产规模，有望 使 其成为 6 吋厂的主力业务。 茂硅董事长唐亦仙在致股东报告书中指出，自 2023年6月起，茂硅着手打造SiC 制程平台，建立了生产SiC功率晶体管的代工能力。然而，由于 部分设备交付周期长达2年，2024年至2025年上半年主要处于筹备阶段。 唐亦仙还表示，茂硅将紧抓汽车电子与工业 ...

Core Viewpoint - Wolfspeed is facing significant financial pressure due to high capital expenditures and operational losses associated with its transition to silicon carbide (SiC) technology, despite positive trends in the AI market and supportive legislation like the CHIPS Act [1]. Company Overview - Wolfspeed, formerly known as Cree Inc., is a leading American company established in 1987, focusing on wide bandgap semiconductors, particularly SiC and gallium nitride (GaN) [2][4]. - The company has a strong historical presence in SiC production, being the first to launch SiC wafers in 1991, establishing itself as a market leader [2]. Financial Performance - For the fiscal year 2023, Wolfspeed reported revenues of $758 million, with a significant operating loss of $311 million [9]. - The company's total revenue for the trailing twelve months (TTM) was $776.6 million, reflecting a 3.06% decline compared to the previous year [9]. - TTM gross margin was 2.21%, down over 7% from the previous year, indicating severe cost pressures [10]. Market Dynamics - The global SiC market is projected to reach $4.2 billion in 2024, with a compound annual growth rate (CAGR) of approximately 26% from 2026 to 2030, although current demand from electric vehicles is underwhelming [6][14]. - Wolfspeed's market share has been approximately 18.5%, but it is expected to decline to around 10% by 2034 due to increasing competition and market dynamics [15][16]. Competitive Landscape - The semiconductor industry is highly competitive, with major competitors including ON Semiconductor, STMicroelectronics, and Infineon Technologies, all of which have more stable financial conditions [8]. - Wolfspeed's financial instability hampers its ability to effectively compete in a market where technology is easily replicable and competitors may have lower costs [8]. Future Outlook - The company is expected to face continued operational challenges, with projected revenues for the upcoming quarters remaining flat, and significant debt levels raising concerns about its financial health [20][21]. - Despite the potential for growth in the SiC market, Wolfspeed's high debt burden and ongoing losses create a cautious outlook for its future performance [22].