如果您希望可以时常见面，欢迎标星收藏哦~ 据 业 内人士 透 露 ， 三 星 电 子 和 SK 海力士正在加速开发下一代三 维 （ 3D ） 动 态 随 机 存 取 存 储 器 （DRAM），两家公司都计划在今年年底前完成并测试垂直结构"4F² DRAM"的早期原型。 4F² DRAM架构突破了传统平面DRAM的局限，采用垂直堆叠方式，克服了现有结构的微型化限 制。该设计有望提升性能、数据传输速率和能效。三星电子和SK海力士均将4F² DRAM定位为迈 向成熟的3D DRAM技术的过渡阶段。 DRAM 以称为单元（或称"存储单元"）的单位存储信息，每个单元的面积通常用 F² 表示。迄今为 止的标准架构是 6F² 单元，它包含三条垂直位线和两条水平字线。4F² 架构将位线和字线都减少到 两条，同时将晶体管（每个 DRAM 单元内的功能开关）垂直放置，从而提高密度并缩小芯片尺 寸。 据 报 道 ， 两 家 韩 国 芯 片 制 造 商 正 在 加 快 开 发 可 实 际 运 行 的 4F² DRAM 原 型 。 " 在 全 面 开 展 3D DRAM开发之前，这两家公司计划在年内完成并验证能够实际运行的4F² DR ...

Core Viewpoint - Samsung Electronics and SK Hynix are accelerating the development of the next generation of 3D DRAM, specifically the vertical structure "4F² DRAM," aiming to complete and test early prototypes by the end of this year [1][2]. Group 1: Development and Technology - The 4F² DRAM architecture differs significantly from traditional planar DRAM, utilizing a vertical stacking method to overcome miniaturization limitations, which is expected to enhance performance, data transfer rates, and energy efficiency [1]. - Both companies plan to validate the commercial viability of the 4F² DRAM prototype before fully launching into 3D DRAM development, while Micron Technology is reportedly skipping the 4F² DRAM stage to directly enter 3D DRAM development [2]. - The transition to vertical design is seen as essential due to the increasing challenges of miniaturizing planar DRAM, with the latest products being based on the 10nm process node [5]. Group 2: Market Impact and Future Projections - The anticipated performance improvement of 4F² DRAM is nearly 50% compared to existing models, with mass production expected within the next three years if development proceeds as planned [5]. - The architectural shift is expected to reshape manufacturing processes, materials, and equipment requirements, with both companies collaborating with global semiconductor equipment manufacturers to develop advanced processes for 4F² DRAM production [6]. - The transition to vertical DRAM architecture is viewed as the only viable path forward, despite the significant challenges posed by the scale of structural changes in development and manufacturing processes [6].