Core Insights - Kioxia Corporation has launched the KIOXIA BG7 series SSDs, featuring the latest BiCS FLASH generation 8 3D flash memory and CMOS directly Bonded to Array (CBA) technology, aimed at providing a balance of performance, features, and efficiency for PC customers [1][2] Performance and Efficiency - The KIOXIA BG7 SSDs achieve random read/write speeds of up to 1,000,000 IOPS and sequential read speeds of up to 7,000 MB/s, representing approximately 10% and 16% performance improvements over the previous KIOXIA BG6 Series [2] - Power efficiency in sequential write performance has improved by approximately 67% due to advancements in memory cell performance, efficient control circuits, and an optimized SSD controller [2] Product Features - The KIOXIA BG7 Series includes NVMe™ 2.0d capabilities for enhanced control by OEMs and introduces a new Type 2242 form factor alongside existing M.2 Type 2230 and 2280 models, broadening its application range [3] - The drives support Host Memory Buffer (HMB) technology, which utilizes part of the host memory (DRAM) to provide cost savings for customers [4] Market Introduction - The KIOXIA BG7 Series will debut at CES 2026, with samples currently being evaluated by select PC OEM customers [4]

Core Viewpoint - Kioxia Holdings (Kioxia HD) is focusing on advancing its flagship product BiCS FLASH technology to meet the growing demands of artificial intelligence (AI) by enhancing bit density, reliability, performance, and energy efficiency [1][6]. Summary by Sections Memory Technology Evolution - Kioxia HD's memory capacity has increased from 4M bits in 1991 to 2T bits in the eighth generation of BiCS FLASH, representing a 500,000-fold increase [1]. - The company emphasizes that the cost competitiveness of NAND flash memory depends on the number of bits that can be loaded onto a chip, with various methods to increase bit density including layer stacking and architectural innovations [1][3]. Bit Density Maximization - Kioxia HD combines layer stacking with planar area reduction to maximize bit density, utilizing new architectures like CBA (CMOS Direct Bonding Array) and early adoption of QLC technology [3][4]. - The OPS (On Pitch SGD) technology has been developed in collaboration with partners to reduce area overhead in the word line layer, enhancing the efficiency of memory designs [3]. New Architectures and Technologies - The introduction of CBA technology in the eighth generation reduces wiring overhead between CMOS and memory cells, allowing for better performance under optimal conditions [4]. - Kioxia HD has been producing QLC products since the fourth generation of BiCS FLASH, balancing performance and reliability to lower costs [6]. Future Technology Strategy - The company plans to develop high-capacity and high-performance products by combining layer stacking and planar reduction, targeting enterprise and data center SSD markets [7]. - Kioxia HD aims to leverage CBA technology to create competitive products that meet advanced application demands while maintaining investment efficiency [9]. Market Expansion Efforts - Kioxia HD is exploring new markets beyond TLC and QLC NAND, including the development of OCTRAM for low-power AI applications and X-FLASH to bridge the latency gap between TLC NAND and DRAM [11]. - The CXL-XL memory, which allows memory sharing between CPUs, is set to address the growing need for large-capacity, low-latency memory solutions [13].