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功率半导体聚焦:东芝SiC技术亮相PCIM Asia,引领高效能源转换
半导体芯闻· 2025-09-30 10:24
Core Viewpoint - The article highlights Toshiba's advancements in power semiconductor technology, particularly in silicon carbide (SiC) devices, showcased at the 2025 PCIM Asia exhibition, emphasizing their collaboration with Basic Semiconductor to enhance innovation in the industry [1][3][9]. Group 1: Toshiba's SiC Technology - Toshiba's SiC product line includes voltage ratings of 1200V, 1700V, 2200V, and 3300V, all of which are in mass production and applied in sectors such as rail transportation, renewable energy, and industrial inverters [3][4]. - The unique feature of Toshiba's SiC technology is the embedded Schottky Barrier Diode (SBD) design, which reduces the forward voltage drop (VF) to approximately 1.35V, significantly lowering power loss and enhancing device reliability [3][4]. - Toshiba's SiC devices also offer a wide gate control range (-10V to 25V) and a high threshold voltage (3-5V), providing flexibility and reducing the risk of false triggering [3]. Group 2: IEGT Technology - Toshiba pioneered the injection-enhanced gate transistor (IEGT) technology in the late 1990s, addressing high voltage IGBT challenges and establishing a leading position in high voltage power devices [5][6]. - The IEGT product line covers voltage ratings from 3300V to 6500V, with current ratings from 750A to 3000A, and is being developed for 5000A products, primarily used in flexible DC transmission systems [6][7]. Group 3: Lithium Titanate Battery Technology - Toshiba's lithium titanate battery technology, although less common, offers unique advantages such as excellent safety performance and the ability to operate in extreme temperatures, making it suitable for critical applications like UPS systems in semiconductor manufacturing [8]. - The lithium titanate batteries are compact and have a lifespan of over ten years, contrasting with traditional lead-acid batteries [8]. Group 4: Strategic Collaboration - Toshiba's strategy focuses on leveraging its core strengths in semiconductor chip design and manufacturing while collaborating with partners like Basic Semiconductor for module packaging and customer resources [9][12]. - The partnership has led to the development of advanced power modules that utilize both companies' technologies, enhancing performance in various applications [9]. Group 5: Future Outlook - Toshiba plans to launch its fifth-generation T5G SiC products by 2026, which will be based on 8-inch wafers, promising improvements in performance and cost [11][12]. - The company emphasizes a balanced approach between technological innovation and market demand, ensuring long-term reliability across its MOS, IGBT, and SiC product lines [12].