Core Insights - The article highlights ROHM's role as a key silicon provider for NVIDIA's new 800 V High Voltage Direct Current (HVDC) architecture, which is a significant advancement in data center design aimed at enhancing efficiency, scalability, and sustainability in AI factories [1][4]. Group 1: ROHM's Technology and Offerings - ROHM's power device portfolio includes both silicon and wide bandgap technologies, such as silicon carbide (SiC) and gallium nitride (GaN), providing strategic solutions for data center designers [2]. - The RY7P250BM, a 100V power MOSFET, is specifically designed for hot-swap circuits in 48V power systems, featuring ultra-low ON resistance of 1.86 mΩ, which is crucial for high-density cloud platforms [3]. - ROHM's SiC MOSFETs excel in high-voltage, high-power environments, offering higher efficiency and reliability, aligning with the requirements of NVIDIA's 800 V HVDC architecture [5]. Group 2: Industry Collaboration and Future Directions - The transition to an 800V HVDC infrastructure is a collaborative effort, with ROHM committed to working with industry leaders like NVIDIA and data center operators to provide essential silicon technologies for next-generation AI factories [8]. - ROHM is advancing its EcoGaN™ brand, which includes GaN technologies that perform exceptionally well in the 100V to 650V range, supporting the demand for smaller, efficient power systems in AI data centers [6]. - The company offers high-power SiC modules optimized for high-efficiency power conversion, particularly suited for the centralized power systems envisioned in NVIDIA's architecture [7].

Next-generation PSU ‘designed for production’ achieves OCP requirements for high-power, high-density server racks, enabled by GaNSafe™ ICs and Gen-3 Fast SiC MOSFETs Navitas Launches Industry-Leading 12kW GaN & SiC Platform, Achieving 97.8% Efficiency for Hyperscale AI Data Centers Next-generation PSU ‘designed for production’ achieves OCP requirements for high-power, high-density server racks, enabled by GaNSafe™ ICs and Gen-3 Fast SiC MOSFETs. TORRANCE, Calif., May 21, 2025 (GLOBE NEWSWIRE) -- Navitas ...

Unprecedented reliability combined with superior performance & optimized, high-creepage package sets a new benchmark in automotive and industrial applications Navitas Redefines Reliability with Industry’s First Automotive ‘AEC-Plus’ Qualified SiC MOSFETs in HV-T2Pak Top-Side Cooled Package Unprecedented reliability combined with superior performance & optimized, high-creepage package sets a new benchmark in automotive and industrial applications. TORRANCE, Calif., May 05, 2025 (GLOBE NEWSWIRE) -- Navitas ...

Core Insights - ROHM Semiconductor's latest 2kV SiC MOSFETs have been adopted by SMA Solar Technology AG for their new power conversion solution "Sunny Central FLEX" [1][2] - The collaboration between ROHM, Semikron Danfoss, and SMA aims to enhance grid connections for photovoltaic installations and battery storage systems [1][4] Company Overview - SMA Solar Technology AG is a leading global specialist in photovoltaic and storage system technology, providing a range of high-efficiency PV and battery inverters, energy management systems, and charging solutions for electric vehicles [5][6] - Semikron Danfoss is a global technology leader in power electronics, focusing on semiconductor devices and power modules for automotive, industrial, and renewable energy applications [7][8] - ROHM is a prominent semiconductor and electronic component manufacturer, supplying a variety of components across multiple sectors, including automotive and industrial equipment [9][10] Product Details - The new 2kV SiC MOSFETs are designed for high reliability and efficiency, suitable for 1500V DC links, and are already in mass production [2][3] - The SEMITRANS 20 module, developed by Semikron Danfoss, incorporates ROHM's SiC MOSFETs and is tailored for high power applications, including solar and energy storage inverters [3][4] Environmental Impact - SMA's inverters have contributed to preventing over 64 million tons of CO2 emissions globally, showcasing the environmental benefits of their technologies [6]

Core Insights - Navitas Semiconductor has introduced high-power GaNSafe and Gen 3 'Fast' SiC MOSFETs that enhance energy efficiency in AI data center power supply units (PSUs), achieving efficiencies between 96.5% and 98% [1][6] - The new Ruby certification for PSUs, announced in January 2025, sets a higher efficiency benchmark, requiring an additional 1% efficiency across all load conditions compared to previous standards [3][4] - The advancements in GaN and SiC technology by Navitas are positioned to significantly reduce carbon footprints and operational costs in the data center industry, with potential savings of 10 TWh of energy for every percentage point improvement in efficiency [7] Company Overview - Navitas Semiconductor is a leader in next-generation power semiconductors, focusing on GaN and SiC technologies, and has been operational since 2014 [8] - The company has developed a range of products, including the world's first 8.5 kW AI data center power supply, which meets 98% efficiency and complies with Open Compute Project specifications [6] - Navitas holds over 300 patents and is recognized for its commitment to sustainability, being the first semiconductor company to achieve CarbonNeutral certification [8]