ROHM's Innovative Schottky Barrier Diode Combines low VF with low IR which is ideal for protection applications. VF vs IR Characteristic Comparison Supports higher resolution image sensors. Santa Clara, CA and Kyoto, Japan, Oct. 23, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of an innovative Schottky barrier diode that overcomes the traditional VF / IR trade-off, delivering high reliability protection for a wide range of high-resolution image sensor applications suc ...

Core Insights - ROHM Semiconductor has released a white paper detailing advanced power solutions for AI data centers based on the 800 VDC architecture, emphasizing its role in driving system innovation within the semiconductor industry [1][3] Group 1: 800 VDC Architecture - The 800 VDC architecture is a highly efficient and scalable power delivery system that is set to transform data center design, enabling gigawatt-scale AI factories [3] - Transitioning to an 800 VDC architecture significantly enhances data center efficiency, power density, and sustainability [5] - The shift to 800 VDC infrastructure is a collective industry effort, with ROHM collaborating with NVIDIA and other stakeholders to deliver essential wide bandgap semiconductor technologies [9] Group 2: Power Solutions and Technologies - ROHM offers a broad portfolio of power devices, including silicon, silicon carbide (SiC), and gallium nitride (GaN), and is among the few companies with the expertise to develop analog ICs that maximize device performance [3] - The white paper includes comprehensive power solutions supported by thermal design simulations, board-level design strategies, and real-world implementation examples [4] - Wide bandgap devices, particularly SiC and GaN, are critical for achieving efficient performance in the 800 VDC system [6] Group 3: Device Innovations - ROHM's EcoSiC™ series features industry-leading low on-resistance and top-side cooling modules ideal for AI servers, while the EcoGaN™ series combines GaN performance with proprietary analog IC technologies [8] - The EcoGaN™ series allows for stable gate drive, ultra-fast control, and high-frequency operation, which have garnered strong market recognition [8] - ROHM has established an integrated production system for SiC devices, solidifying its position as a leading supplier in the field [10]

Core Insights - ROHM Semiconductor has released a white paper on advanced power solutions for AI data centers utilizing an 800 VDC architecture, highlighting its role in semiconductor innovation [1][2] Group 1: 800 VDC Architecture - The 800 VDC architecture is a highly efficient and scalable power delivery system that can transform data center design, enabling gigawatt-scale AI factories [2] - Transitioning to 800 VDC significantly enhances data center efficiency, power density, and sustainability [4] - The relocation of AC-DC conversion from server racks to dedicated power racks optimizes power distribution [4] Group 2: Power Device Technologies - ROHM offers a broad portfolio of power devices, including silicon, silicon carbide (SiC), and gallium nitride (GaN), with expertise in developing analog ICs to maximize device performance [2][8] - Wide bandgap devices like SiC and GaN are essential for achieving efficient performance in the new architecture [5] - ROHM's EcoSiC™ series features low on-resistance and top-side cooling modules ideal for AI servers, while the EcoGaN™ series combines GaN performance with proprietary analog IC technologies [7][11] Group 3: Industry Collaboration - The shift to 800 VDC infrastructure is a collective industry effort, with ROHM collaborating with NVIDIA, data center operators, and power system designers [8] - Strategic partnerships, such as the one with Delta Electronics in 2022, are driving innovation in SiC and GaN power devices [8]

Core Insights - ROHM Semiconductor has launched six new high-side smart switches (IPDs) that feature highly accurate current sensing and low ON resistances ranging from 9mΩ to 180mΩ, aimed at enhancing the reliability of automotive lighting and body control systems [1][4]. Product Features - The new smart switches are designed to protect loads from abnormalities such as overcurrent, overvoltage, and overtemperature, ensuring reliable operation and safeguarding sensitive components [1]. - These devices include comprehensive diagnostic functions like open load and reverse battery detection, which further enhance system safety and reliability [1]. - The BV1HBxxxEFJ series provides exceptional high-capacitance load driving capability, addressing the limitations of conventional smart switches in managing high-capacitance applications [3]. Technological Advancements - ROHM's proprietary process technology eliminates the trade-off between low ON resistance and high inductive energy clamping, achieving an optimal balance across drive capability, ON resistance, and energy tolerance [3][11]. - The current sensing precision of ±5% offers superior harness and fault protection, while the compact HTSOP-J8 package ensures excellent design versatility [4]. Market Contribution - By commercializing high-performance smart switches tailored to zonal controller requirements, ROHM is contributing to automotive electrification and the elimination of mechanical fuses [2]. - The company remains committed to advancing safety, security, and energy efficiency in the automotive sector through ongoing development of high reliability, high performance devices [4].

Core Insights - ROHM Semiconductor has developed the DOT-247, a new 2-in-1 SiC molded module aimed at industrial applications such as PV inverters, UPS systems, and semiconductor relays [1][16] - The DOT-247 features a dual TO-247 structure that allows for larger chip integration, achieving lower on-resistance and reducing thermal resistance by approximately 15% and inductance by about 50% compared to conventional TO-247 solutions, resulting in a 2.3x higher power density in a half-bridge configuration [2][3] Product Features - The DOT-247 is available in two topologies: half-bridge and common-source, addressing the rising demand for multi-level circuits in PV inverters [3][4] - The module's design reduces the number of components and board space, facilitating circuit miniaturization compared to discrete solutions [4] Application Examples - The DOT-247 is suitable for various applications including PV inverters, semiconductor relays, UPS, ePTO, boost converters for fuel cell vehicles, AI servers, and EV charging stations [5] Sales Information - The DOT-247 will be available in OEM quantities starting September 2025, with AEC-Q101 qualified products scheduled for sample shipments in October 2025 [6] Comprehensive Support - ROHM provides extensive application-level support, including in-house motor testing equipment and various supporting materials such as simulations and thermal designs for quick evaluation and adoption of DOT-247 products [7] - An evaluation kit for double-pulse testing is available, with a kit for 3-phase inverters under preparation, and reference designs expected to be released from November 2025 [7] Design Models - SPICE models for the DOT-247 are available on the product page, with LTspice models for three-level NPC expected to be available starting October 2025 [8] EcoSiC™ Brand - EcoSiC is ROHM's brand for silicon carbide devices, which are recognized for their superior performance compared to silicon, with ROHM developing essential technologies for SiC evolution and maintaining an integrated production system [9]

Core Insights - ROHM Semiconductor and Schaeffler have commenced mass production of a new high-voltage inverter brick utilizing ROHM's SiC MOSFET bare chips, aimed at a major Chinese automaker [1][8] - The inverter brick enhances performance by supporting battery voltages exceeding 800V and managing RMS currents up to 650A, making it a compact power solution [2][4] - The strategic partnership between ROHM and Schaeffler, established in 2020 and reinforced in June 2023, focuses on innovation and sustainability in the automotive sector [6][11] Company Developments - Schaeffler's inverter brick is designed for scalability and modularity, facilitating integration into various inverter systems [3][4] - The brick includes essential components such as a power module for PWM, DC link capacitor, and an integrated DC boost function, allowing compatibility with 400V charging stations while maintaining 800V charging speeds [5][4] - Schaeffler has over 75 years of experience in motion technology and is recognized as one of Germany's most innovative companies, employing around 120,000 people globally [7]

Core Viewpoint - ROHM Semiconductor has launched a new reference design (REF67004) that integrates analog-digital hybrid control technology to manage two types of power converters, enhancing efficiency in consumer and industrial power supply applications [1][3]. Group 1: Product Overview - The REF67004 reference design controls a Critical Conduction Mode PFC converter and a Quasi-Resonant Flyback converter, providing a regulated DC output of 24V from an AC input range of 85V to 264V [5][6]. - This design is part of ROHM's LogiCoA™ Power Supply Solution, which combines analog-controlled power stages with digitally managed circuits using low-power LogiCoA MCUs [1][3][8]. Group 2: Market Context - There is a growing demand for higher reliability and precise control in power supply applications, which traditional analog-only configurations struggle to meet [2]. - Fully digital power supplies, while offering fine control, have seen limited adoption in small to medium power ranges due to high costs and power consumption [2]. Group 3: Features and Benefits - The REF67004 includes a calibration function for high-precision voltage configuration and overcurrent protection, allowing for reduced design margins and the use of more compact power devices [6]. - It features a logging function that enables the storage of operational data in non-volatile memory, facilitating the identification of power supply failures [7]. - The design supports easy configuration and retrieval of power control parameters via PC, enhancing user experience and operational efficiency [7]. Group 4: Future Developments - ROHM plans to expand its lineup of power supply reference designs to support a variety of power topologies, further aiding customer development in power supply solutions [10][12].

Core Insights - ROHM Semiconductor has developed the AW2K21, a 30V N-channel MOSFET with an industry-leading ON-resistance of 2.0mΩ in a compact 2.0mm × 2.0mm package [1][11]. Product Development - The AW2K21 addresses the growing demand for fast charging in compact devices, which require bidirectional protection to prevent reverse current flow [2]. - The new MOSFET integrates two devices into a single package, optimizing space and complexity in power supply and charging circuits [3]. Technical Specifications - The AW2K21 features a proprietary structure that enhances cell density and minimizes ON-resistance per unit chip area, achieving a maximum current rating of 20A and breakdown voltage between 28V and 30V [2][4]. - Compared to standard solutions that require two 3.3mm × 3.3mm MOSFETs, the AW2K21 reduces footprint and ON-resistance by approximately 81% and 33%, respectively [5]. Competitive Advantage - The AW2K21's design allows for a larger chip-to-package area ratio, further reducing ON-resistance per unit area, making it suitable for high-power fast charging applications [4]. - It maintains the lowest ON-resistance in the industry for unidirectional protection MOSFETs in load switch applications [8]. Future Developments - ROHM is committed to further miniaturization and energy efficiency, with plans to develop an even smaller 1.2mm × 1.2mm model [8][9]. - The AW2K21 is set to launch in April 2025 and will be available through online distributors such as DigiKey™, Mouser™, and Farnell™ [9].

Core Insights - ROHM Semiconductor has launched the RY7P250BM, a 100V power MOSFET designed for hot-swap circuits in 48V power systems, particularly for AI servers and industrial power supplies [1][5] - The shift from 12V to 48V power architectures is driven by the increasing power demands of AI technology and high-performance GPUs, necessitating improved power efficiency and higher current support [2][6] Product Features - The RY7P250BM is packaged in a compact 8080-size, reducing power loss and cooling requirements while enhancing server reliability and energy efficiency [3][6] - It features a low ON-resistance of 1.86mΩ, which is approximately 18% lower than the typical 2.28mΩ of existing wide SOA 100V MOSFETs, making it suitable for hot-swap operations [3][4] - The product achieves wide SOA tolerance, supporting 16A at 10ms and 50A at 1ms, which is critical for handling large inrush currents in AI server applications [4][5] Market Adoption - The RY7P250BM has been certified as a recommended component by a leading global cloud platform provider, indicating its expected widespread adoption in next-generation AI servers [5][9] - ROHM plans to expand its lineup of 48V-compatible power solutions, contributing to sustainable ICT infrastructure and energy savings [6][8] Application Areas - The product is applicable in various sectors, including 48V AI server systems, industrial equipment power systems, battery-powered industrial equipment, and UPS systems [7][8]

Core Viewpoint - ROHM Semiconductor has developed the BM6GD11BFJ-LB, an isolated gate driver IC designed for 600V-class high-voltage GaN HEMTs, enhancing efficiency and miniaturization in high-current applications like motors and server power supplies [1][4]. Group 1: Product Development - The BM6GD11BFJ-LB is the first in a series of isolated gate driver solutions optimized for GaN devices, leveraging ROHM's expertise in isolated gate driver ICs for silicon and SiC devices [3]. - The driver utilizes proprietary on-chip isolation technology to minimize parasitic capacitance, enabling high-frequency operation up to 2MHz, which maximizes the switching capabilities of GaN devices [4]. - The device features a gate drive voltage range of 4.5V to 6.0V and an isolation voltage of 2500Vrms, supporting a wide range of high-voltage GaN devices, including ROHM's 650V EcoGaN™ HEMT [6]. Group 2: Performance Improvements - CMTI has been increased to 150V/ns, which is 1.5 times higher than conventional products, preventing malfunctions from high slew rates typical of GaN HEMT switching [5]. - The minimum pulse width has been reduced to 65ns, which is 33% less than conventional products, allowing for stable operation at higher frequencies while minimizing power loss [5]. - The output-side current consumption is industry-leading at 0.5mA (Max), which reduces standby power and enhances overall system efficiency [6]. Group 3: Applications and Availability - The BM6GD11BFJ-LB is applicable in industrial equipment such as power supplies for PV inverters, energy storage systems, communication base stations, servers, and industrial motors, as well as consumer devices like AC adapters, PCs, TVs, refrigerators, and air conditioners [7]. - The product is available through online distributors like DigiKey™ and Mouser™, with a sample price of $4.0 per unit (excluding tax) [7].