Core Viewpoint - The rapid development of non-volatile memory (NVM) technology is driven by emerging applications such as artificial intelligence, autonomous driving, and the Internet of Things, which pose challenges to traditional storage systems in terms of speed, energy consumption, and stability [1][2]. Summary by Sections Storage Technology Transformation Needs - Current computing systems rely on a storage hierarchy of SRAM, DRAM, and flash memory, which face significant challenges as technology nodes surpass 10nm, including limited scalability, performance enhancement difficulties, and increased read/write interference [3]. - New non-volatile storage technologies, including SOT-MRAM, STT-MRAM, PCM, RRAM, and FeRAM, are emerging to meet the higher demands for speed, non-volatility, and reduced power consumption [3]. Advantages of SOT-MRAM - SOT-MRAM is gaining attention due to its unique working principle and technical advantages, including high speed, low power consumption, and non-volatility, making it a potential replacement for SRAM in next-generation computing systems [4]. Overcoming Key Technical Challenges - A critical technical bottleneck for SOT-MRAM is the thermal stability of spin-orbit coupling materials. Tungsten, particularly in its β-phase, is an ideal candidate due to its strong spin-orbit coupling characteristics, but it is metastable and can transition to a less efficient α-phase under typical semiconductor processing conditions [5][7]. Breakthrough Solutions - The research team developed a composite structure by inserting ultra-thin cobalt layers within the tungsten layers, enhancing thermal stability and maintaining high spin-orbit torque efficiency. This design allows for rapid data switching and significantly reduces energy consumption [7][8]. Performance Validation - The team successfully fabricated a 64kb SOT-MRAM prototype array and conducted comprehensive performance testing, achieving a switching speed of 1 nanosecond, comparable to SRAM, and demonstrating excellent stability and repeatability [10][12]. Implications for the Storage Industry - The development of SOT-MRAM indicates a shift in the storage industry, with potential to replace or simplify the traditional SRAM-DRAM-flash memory hierarchy, enhancing system efficiency and reducing energy consumption in applications like AI and edge computing [14][15]. Future Directions - The research team's approach to stabilizing metastable phases may provide insights for other functional materials, and the advancements in SOT-MRAM could facilitate innovations in computing architectures, such as in-memory computing, addressing the limitations of traditional von Neumann structures [15][17].