Group 1 - Rapidus participated in the 2025 Japan Semiconductor Exhibition, showcasing prototypes of 2nm GAA transistors and 600mm RDL interposer panels produced at their R&D manufacturing center in Chitose, Hokkaido [2] - The first 2nm GAA transistor prototype was completed on June 28, 2025, and demonstrated at the exhibition, attracting significant visitor interest [2] - The 2nm GAA transistors can reduce power consumption by approximately 90% compared to 40nm planar transistors from around 2008, and by about 25% compared to 7nm FinFETs from around 2018 [2] Group 2 - In the RDL interposer manufacturing process, wiring is formed on a glass carrier, followed by the installation of bridging chips and upper layer wiring, culminating in the completion of the RDL interposer chip installation process [3] - Rapidus plans to begin mass production of front-end processes in 2027, with back-end processes expected to start in the second half of 2027 to early 2028 [3]