Core Viewpoint - Western countries are increasing defense spending and investing in advanced military technologies, particularly focusing on wide bandgap semiconductors like SiC (Silicon Carbide) and GaN (Gallium Nitride) for enhanced performance in military applications [1][2]. Group 1: Military Technology Investment - The demand for advanced military technologies includes powerful new radars, high-frequency communication systems, long-range missiles, and electronic countermeasure systems [1]. - The need for lightweight, compact, and durable equipment is critical, especially for deployment in space, air, and ground operations [1]. Group 2: Advantages of Wide Bandgap Semiconductors - Wide bandgap semiconductors can operate at higher temperatures and better manage heat, which is crucial for military applications [2]. - GaN and SiC devices provide better radiation resistance compared to traditional silicon-based semiconductors, reducing the need for mechanical shielding and thus saving weight and space [2][3]. - GaN transistors have a fast switching frequency of 10 MHz, which is essential for voltage converters, while their operational frequency can exceed GHz ranges, making them suitable for radar applications [3]. Group 3: Specific Applications and Developments - The U.S. Army is producing low-tier air defense missile sensors (LTAMDS) to replace the core radar system of the "Patriot" missile defense system, utilizing advanced GaN power semiconductors [5]. - The phased array antenna systems used in these radars allow for 360° scanning without mechanical rotation, enhancing operational efficiency [5]. - High-power, high-frequency RF signals are crucial for anti-jamming communications, and wide bandgap semiconductors facilitate this capability due to their superior thermal management and power density [6]. Group 4: Future Directions and Innovations - Global semiconductor manufacturers are working to reduce SiC production costs and improve manufacturability by increasing wafer sizes [7]. - Raytheon has received a contract from DARPA to develop ultra-wide bandgap semiconductors (UWBGS) based on diamond and aluminum nitride technologies, promising enhanced power output and thermal management for electronic applications [7].