研究报告 Research Report 分析师：Charles Zhuang 庄怀超 13 July 2025 Tel: (852) 9748 7114 Email: charles.zhuang@gpf.com.hk 百合花 Lily Group (603823.CH) High performance organic pigment leader & Horizontally and vertically integrated expansion See the last page for disclaimer 1 [Table_header2] ⚫ 公司有机颜料产品品类和色系齐全。百合花成立于 1995年，主要产品为高性能杂环类颜料、高性能偶氮颜料、传统 偶氮颜料、有机颜料中间体以及珠光颜料等。公司高性能有机颜料包括喹吖啶酮类、吡咯并吡咯二酮类（DPP）、 异吲哚啉类、二噁嗪类、金属络合类、酞菁类、苯并咪唑酮类、色酚类及其他类，传统偶氮颜料包括色淀红类、双 偶氮黄类、汉沙黄类、单偶氮橙类、双偶氮橙类、色酚类。有机颜料下游应用领域主要为油墨（40%）、涂料 （28%）、塑料（27%）等行业。公司是国内少 ...

Core Insights - The year 2025 is projected to be the milestone for mass production of humanoid robots, with Gallium Nitride (GaN) semiconductors playing a crucial role in bridging the gap between laboratory prototypes and commercial applications [1][2] - GaN semiconductors outperform traditional silicon-based chips in terms of high frequency, energy efficiency, and high voltage tolerance, addressing key challenges in robotic joint drive precision, power density, and heat dissipation [1][2] Group 1: GaN Semiconductor Advantages - GaN chips exhibit significantly lower conduction losses (70% reduction compared to silicon devices) and higher switching speeds, making them ideal for robotic wrist joint drives [2][4] - The introduction of GaN technology allows for smaller device sizes, improved motor power, and enhanced dynamic control for humanoid robots, meeting the increasing market demand for higher load-bearing capabilities [3][4] - GaN's high power density enables robots to achieve practical applications, such as lifting heavy objects, which exceeds the capabilities of silicon chips [3][4] Group 2: Industry Developments and Applications - Major companies like Texas Instruments are focusing on GaN applications in humanoid robots, highlighting its potential for high-precision motor control at elevated PWM frequencies [4] - InnoSilicon has successfully integrated GaN products into various core components of humanoid robots, achieving a 30% power increase and a 5% improvement in conversion efficiency [4][8] - The introduction of GaN technology is expected to significantly reduce the size of power supplies by 30%, optimizing the limited space available in robots [8] Group 3: Market Potential and Future Outlook - The humanoid robot industry is on the brink of explosive growth, with projections indicating that the market could be 100 times larger than that of electric vehicles in the next five years [10][11] - Each humanoid robot may require approximately 300 GaN devices, with the potential for this number to exceed 1000 as performance and power density improve [11] - The market for humanoid robots is anticipated to evolve into a multi-billion dollar industry within five years, with long-term projections suggesting a trillion-dollar market for household smart devices [11]

Core Viewpoint - Navitas Semiconductor's recent collaboration document has caused significant disruption in the global GaN semiconductor industry, revealing TSMC's plan to exit GaN wafer production by July 2027, while Navitas partners with PSMC to advance 8-inch silicon-based GaN technology mass production [1] Group 1: TSMC's GaN Journey - TSMC has been a key player in the commercialization of GaN technology since 2011, leveraging its CMOS manufacturing experience to develop GaN-on-Si technology [2] - By 2015, TSMC achieved mass production of GaN-on-Si, establishing a comprehensive technology platform across various voltage levels, including 650V, 100V, and 40V [2][3] - TSMC captured 40% of the global GaN wafer foundry market by 2023, establishing a competitive landscape with X-Fab and Episil [3] Group 2: TSMC's Withdrawal - TSMC announced its decision to gradually exit the GaN business over the next two years, citing a reassessment of business priorities and a shift towards higher-margin sectors like AI chips [4][5] - The company’s GaN production capacity was relatively small, with a monthly output of only 3,000-4,000 6-inch wafers, leading to minimal revenue contribution [4] - Increased competition and price wars, particularly from Chinese IDM manufacturers like Innoscience, have pressured TSMC's profit margins in the GaN market [6] Group 3: Supply Chain Risks - Recent export controls on gallium and germanium by the Chinese government have introduced uncertainties in the supply chain, impacting costs for GaN production [7][8] Group 4: Industry Transition - Following TSMC's exit, Navitas Semiconductor plans to transition its production to PSMC, utilizing 8-inch lines to produce GaN-on-Si devices, targeting the 100V to 650V voltage range [12] - Infineon is advancing its 300mm GaN wafer IDM production strategy, aiming to capitalize on the growing demand for GaN semiconductors [13][14] - The shift in the industry landscape may accelerate the transition from "technological breakthroughs" to "scale implementation" in the GaN sector [15]

如果您希望可以时常见面，欢迎标星收藏哦~ 来 源： 内容来自 yolegroup 。 如今，Nvidia，一家甚至不设计或制造功率器件的公司，正在定义未来功率电子器件的特性和功 能。这家 GPU 巨头正在设计下一代 AI 数据中心的动力总成架构。 许多宽带隙 (WBG) 半导体供应商和硅片供应商都在参与其中，愿意投资新技术来满足 Nvidia 的 需求。 英飞凌科技公司系统创新集团负责人 Gerald Deboy将 Nvidia 比作一位大师，指挥"整个世界设计 出一种建设和运营数据中心的新方法"。 Nvidia 邀请的合作伙伴包括英飞凌、MPS、Navitas、罗姆、意法半导体和德州仪器，共同倡导向 800 V 高 压 直 流 (HVDC) 数 据 中 心 电 力 基 础 设 施 过 渡 。 此 外 ， 还 有 台 达 、 Flex Power 、 Lead Wealth、光宝科技、Megmee 等电力系统组件供应商，以及伊顿、施耐德电气和 Vertiv 等数据中 心系统建设公司。 Yole Group 电力电子市场和技术分析师 Hassan Cheaito认为，Nvidia 对 AI 数据中心的推动正在 ...

如果您希望可以时常见面，欢迎标星收藏哦~ 近日，氮化镓（GaN）市场风云再起：台积电正式宣布将在两年内全面退出GaN代工业务； 力积电趁势接下Navitas的订单，填补台积电撤退后的产能缺口；英飞凌则全力推进12英寸 GaN产线进程；瑞萨电子暂停碳化硅（SiC）项目、转而加码GaN；与此同时，ST与英诺赛科 通过战略投资与"锁仓"延长禁售期，进一步深化绑定关系。这一连串动作，正将GaN推向新 一轮的内卷。 GaN凭借更高的开关速度、更低的损耗与更小的尺寸，被视为传统硅器件的"潜在继任者"。在全球 能源转型与高能效驱动的背景下，GaN半导体市场正步入加速成长期。尤其是在亚太、北美、欧洲 等核心市场，相关企业正密集布局，争夺未来制高点。 但在这一轮热度背后，GaN的真正考验正在酝酿——GaN能否从快充、消费电源等边缘应用，迈向 电动汽车主驱系统等高压核心场景？ 尽管台积电正在退出GaN代工，但是另一边英飞凌却正在加大投入。据英飞凌新闻稿称，凭借其强 大的IDM模式，英飞凌正在推进其在300毫米晶圆上的可扩展GaN生产，首批客户样品计划于2025 年第四季度发布。 英飞凌已成为首家在其现有量产基础设施内成功开发30 ...

杭氧股份在 2025 年二、三季度的业绩表现可能超出市场预期，主要基于以下 几个方面： 首先，管道气业务预计将带来显著增长。2024 年公司管道气收入 约为 60 亿至 70 亿元，今年（2025 年）预计将有明显增长，主要原因是去年 新投产了 65 万方左右的项目，设备固定量增速达到接近 30%。此外，高炉开 工率和产能利用率较高，汽车、家电等行业实施了大量国家补贴，以旧换新和 消费刺激政策，这些都推动了钢铁需求，从而维持了高水平的铁水产量和高炉 开工率。 其次，在零售业务方面，公司预计液体产能将增加约 30%。零售气 体价格方面，由于去年 6 月开始氮气、氧气和氩气价格快速下滑，今年（2025 年）三季度预计会出现同比增长。此外，今年（2025 年）供给端检修力度加 大，例如西北地区一些大型炼化企业进行了两到三年的大检修，对供给产生明 显影响。同时，储罐库容率较低，例如氮气库容率在今年（2025 年）5 月底为 32%左右，同比低 10 个百分点，这导致企业需要外购更多氮气，从而推高当 地价格。 最后，在设备业务方面，公司延续了去年以来的良好态势。整体来看， 今年（2025 年）的产业结构性变化以及供需不 ...

公众号记得加星标⭐️，第一时间看推送不会错过。 近日，氮化镓（GaN）市场风云再起：台积电正式宣布将在两年内全面退出GaN代工业务；力积电趁势接下Navitas 的订单，填补台积电撤退后的产能缺口；英飞凌则全力推进12英寸GaN产线进程；瑞萨电子暂停碳化硅（SiC）项 目、转而加码GaN；与此同时，ST与英诺赛科通过战略投资与"锁仓"延长禁售期，进一步深化绑定关系。这一连串 动作，正将GaN推向新一轮的内卷。 GaN凭借更高的开关速度、更低的损耗与更小的尺寸，被视为传统硅器件的"潜在继任者"。在全球能源转型与高能效驱动 的背景下，GaN半导体市场正步入加速成长期。尤其是在亚太、北美、欧洲等核心市场，相关企业正密集布局，争夺未来 制高点。 但在这一轮热度背后，GaN的真正考验正在酝酿——GaN能否从快充、消费电源等边缘应用，迈向电动汽车主驱系统等高 压核心场景？ 台积电抽身，力积电接棒 台积电在7月3日发表声明称，决定在两年内逐步淘汰其GaN半导体代工业务，分析师表示，此举是由于来自中国的竞争侵 蚀了该产品的利润率。由于对GaN低利润前景感到担忧，台积电已决定逐步淘汰其GaN业务，并停止200毫米晶圆生产的 研 ...

Core Viewpoint - The company has terminated the acquisition of Henan Keyi Gas Co., Ltd., which will not adversely affect its operational performance or financial status [3]. Group 1: Acquisition Details - The company announced the termination of the share acquisition agreement, which releases both parties from any obligations under the previous intention agreement [2]. - The initial plan was to acquire 65.43% of Henan Keyi, a company specializing in industrial gas production and sales, with a registered capital of 91.6785 million yuan [3]. - Henan Keyi's 2023 revenue was 227 million yuan, with a net profit of 24.4581 million yuan, and for the first half of 2024, it reported revenue of 90.9285 million yuan and a net profit of 8.0745 million yuan [3]. Group 2: Strategic Implications - The acquisition was aligned with the company's "14th Five-Year" strategic development plan, aimed at expanding into the industrial gas investment and operation sector [4]. - The company has a strong focus on cryogenic equipment manufacturing and aims to leverage this to enhance its capabilities in industrial gas production [4]. - The termination of the acquisition was due to a failure to reach consensus on key terms after extensive negotiations and due diligence [4]. Group 3: Financial Performance - In 2024, the company reported a revenue increase and a net profit of 72.3668 million yuan, representing a year-on-year growth of 121.67% [5]. - The growth was attributed to a significant increase in both existing and new orders, as well as effective collection of accounts receivable [5]. - The company plans to continue focusing on long-term development, actively pursuing market opportunities, and expanding into clean energy and industrial gas investment operations [5].

Core Viewpoint - InnoLux is set to increase its 8-inch GaN production capacity from 13,000 wafers per month to 20,000 wafers per month by the end of the year, with a long-term goal of reaching 70,000 wafers per month in five years [1] Company Summary - InnoLux is a leading manufacturer of GaN integrated devices, covering wafer manufacturing, discrete devices, smart GaN ICs, driver control chips, and GaN power modules [1] - The company emphasizes the growing importance of GaN in consumer electronics, particularly in chargers, and its potential to replace silicon due to its efficiency and compact size [1] - InnoLux plans to focus on the maturity of its 8-inch production line before gradually advancing to 12-inch technology, which is expected to achieve commercialization by 2030 [2] Industry Summary - According to Yole Group, the revenue from GaN in power applications is projected to grow at an annual rate of 36%, reaching approximately $2.5 billion by 2030 [2] - The transition from 8-inch to 12-inch wafers presents challenges, as the output of 12-inch chips is 2.3 times greater, but maintaining stable yields is difficult [2] - InnoLux believes that advancements in its products will lead to significant performance improvements of up to 40% and cost benefits of 30% compared to traditional silicon power semiconductors over the next few years [2]

Core Viewpoint - The company, Anhui Fulede Technology Development Co., Ltd., plans to issue shares and convertible bonds to acquire 100% equity of Jiangsu Fulehua Semiconductor Technology Co., Ltd., with a total transaction value of 655 million yuan [6][14][20]. Group 1: Transaction Overview - The company intends to acquire 100% equity of Jiangsu Fulehua through the issuance of shares and convertible bonds to 59 trading parties [6][14]. - The assessment report values the 100% equity of Fulehua at 655 million yuan as of September 30, 2024 [6][14]. - The total consideration for the transaction is set at 655 million yuan, with shares and convertible bonds as payment methods [6][14]. Group 2: Fundraising Details - The company plans to raise up to 782.59 million yuan through the issuance of shares to no more than 35 specific investors [12][20]. - The total amount raised will not exceed 100% of the transaction price for the asset acquisition [12][20]. - The funds will be used for intermediary fees, taxes, and specific projects related to semiconductor production [12][20]. Group 3: Share Issuance and Pricing - The shares will be issued at a price of 16.30 yuan per share, which is not lower than 80% of the average trading price over the previous 20 trading days [14][15]. - The total number of shares to be issued is approximately 379.76 million, accounting for 52.88% of the company's total share capital post-transaction [14][15]. - The pricing mechanism includes adjustments for any corporate actions such as dividends or stock splits during the pricing period [15][20]. Group 4: Convertible Bonds - The company will issue convertible bonds with a total value of approximately 35.99 million yuan, representing 5.49% of the total transaction price [20][21]. - The initial conversion price for the bonds is set at 16.30 yuan per share, with no adjustment mechanism for the conversion price [21][24]. - The bonds will have a maturity period of four years and a nominal interest rate of 0.01% per annum [22][24].