Workflow
超大尺寸(12英吋及以上)SiC复合散热基板
icon
Search documents
天域半导体午后涨逾5% 公司与青禾晶元订立战略合作协议
Jin Rong Jie· 2026-01-19 06:12
Core Viewpoint - Tianyu Semiconductor (02658) has entered into a strategic cooperation agreement with Qinghe Crystal, aiming to leverage their respective strengths in silicon carbide (SiC) materials and bonding equipment to develop advanced bonding materials and optimize production processes [1]. Group 1: Company Performance - Tianyu Semiconductor's stock price increased by over 6% during trading, with a current price of 53.75 HKD, and a trading volume of 22.71629 million HKD [1]. Group 2: Strategic Cooperation - The agreement focuses on the joint development of bonding materials, including bonding SiC, silicon-on-insulator (SOI), piezoelectric substrates on insulators (POI), and large-size (12 inches and above) SiC composite heat dissipation substrates [1]. - The board believes that both parties will utilize their competitive advantages to establish a mutually beneficial partnership, enhancing the development of advanced bonding material solutions [1]. - The collaboration is expected to improve the group's technical capabilities in large-size composite substrates, ensure equipment stability, and further solidify the group's market position [1].
港股异动 | 天域半导体(02658)再涨超6% 与青禾晶元达成战略合作 共同推进先进键合材料工艺开发
Zhi Tong Cai Jing· 2026-01-19 03:44
Core Viewpoint - Tianyu Semiconductor (02658) has seen a stock price increase of over 6%, currently trading at 54.65 HKD with a transaction volume of 13.8852 million HKD, following the announcement of a strategic cooperation agreement with Qinghe Crystal [1] Group 1: Strategic Cooperation - The agreement between Tianyu Semiconductor and Qinghe Crystal aims to leverage Tianyu's advantages in silicon carbide (SiC) materials and Qinghe's expertise in customized bonding equipment to jointly develop bonding materials [1] - The collaboration will focus on the development and technological iteration of bonding materials, including SiC, silicon on insulator (SOI), piezoelectric substrates on insulator (POI), and large-size (12 inches and above) SiC composite heat dissipation substrates [1] - The board believes that both parties will utilize their competitive advantages to establish a mutually beneficial partnership, enhancing the development of advanced bonding material solutions and optimizing production processes [1] Group 2: Market Position and Technical Capability - The cooperation is expected to enhance the group's technical capabilities in large-size composite substrates, ensuring equipment stability and further consolidating the group's market position [1]