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10纳米级第六代DRAM
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三星芯片,谋求反超
半导体行业观察· 2025-06-22 03:23
Core Insights - Samsung Electronics is focusing on enhancing its competitiveness in high bandwidth memory (HBM) and foundry services, particularly after losing its DRAM market leadership to SK Hynix for the first time in 33 years [2][4] - The company is actively pursuing strategies to regain its market position, including the production of the fifth generation HBM (HBM3E) and plans for the sixth generation HBM (HBM4) [2][4] - Samsung's DRAM production is expected to significantly improve, with a reported yield increase from less than 30% to between 50-70% for the sixth generation DRAM [4][5] Group 1: Strategic Focus - Samsung's Device Solutions (DS) division discussed HBM as a key topic during its global strategy meeting, emphasizing the importance of HBM in its recovery strategy [2] - The company is also working on improving DRAM design and production processes to enhance competitiveness [2][3] Group 2: Market Position and Competition - Samsung's DRAM market share fell to 7.7% in Q1, widening the gap with industry leader TSMC, which holds 67.6% [3] - SK Hynix has achieved an average yield of over 80% for its sixth generation DRAM, while Samsung is rapidly moving towards mass production [6] Group 3: Production and Investment - Samsung is investing in large-scale production lines to ensure immediate production post-testing, leveraging its strong cash reserves and expertise [5] - The company plans to produce DRAM for both mobile and server applications, with a focus on HBM4 production at its Pyeongtaek facilities [5]