截至发稿，杨坤累计任职时间5年354天，现任基金资产总规模147.76亿元，任职期间最佳基金回报 81.38%， 任职期间最差基金回报-32.3%。 风险提示：市场有风险，投资需谨慎。本文为AI大模型自动发布，任何在本文出现的信息（包括但不 限于个股、评论、预测、图表、指标、理论、任何形式的表述等）均只作为参考，不构成个人投资建 议。 资料显示，江苏宏微科技股份有限公司位于江苏省常州市新北区新竹路5号，成立日期2006年8月18日， 上市日期2021年9月1日，公司主营业务涉及IGBT、FRED为主的功率半导体芯片、单管、模块和电源模 组的设计、研发、生产和销售。主营业务收入构成为：模块(封装)73.83%，单管(封装)22.67%，芯片 1.72%，受托加工业务1.62%，其他0.15%。 从基金十大重仓股角度 数据显示，万家基金旗下1只基金重仓宏微科技。万家国证2000ETF（159628）二季度持有股数19.01万 股，占基金净值比例为0.41%，位居第十大重仓股。根据测算，今日浮亏损失约28.33万元。 万家国证2000ETF（159628）成立日期2022年6月29日，最新规模8.09亿。今年以来收 ...

Core Viewpoint - The stock of Jiangsu Hongwei Technology Co., Ltd. has shown significant price movements and trading activity, indicating investor interest and potential growth in the semiconductor sector [1][2]. Group 1: Stock Performance - As of August 22, Hongwei Technology's stock price increased by 2.03%, reaching 28.68 CNY per share, with a total market capitalization of 6.11 billion CNY [1]. - The stock has risen by 65.97% year-to-date, with a 0.42% decline over the last five trading days, a 27.30% increase over the last 20 days, and a 71.22% increase over the last 60 days [1]. - The company has appeared on the "Dragon and Tiger List" once this year, with a net buy of 8.60 million CNY on August 6 [1]. Group 2: Financial Performance - For the first quarter of 2025, Hongwei Technology reported revenue of 297 million CNY, reflecting a year-on-year growth of 20.70% [2]. - The company has distributed a total of 42.49 million CNY in dividends since its A-share listing, with 22.50 million CNY distributed over the past three years [2]. Group 3: Company Overview - Hongwei Technology, established on August 18, 2006, is located in Changzhou, Jiangsu Province, and was listed on September 1, 2021 [1]. - The company's main business focuses on power semiconductor chips, including IGBT and FRED [1]. - Hongwei Technology is classified under the semiconductor industry, specifically in the electronic sector, and is associated with concepts such as specialized innovation, small-cap stocks, robotics, share buybacks, and third-generation semiconductors [1].