Core Viewpoint - ROHM Co., Ltd. is integrating its GaN power device technologies with TSMC's process technology to create an end-to-end production system, aiming to enhance supply capabilities for growing demand in AI servers and electric vehicles [1][6]. Group 1: Technology Integration - ROHM will license TSMC's GaN technology to strengthen its production capabilities [1]. - The integration represents an evolution of the existing partnership, with a new license agreement facilitating technology transfer to ROHM Hamamatsu [6]. - The production system is expected to be established by 2027 to cater to the increasing demand in applications like AI servers [6]. Group 2: Market Demand and Applications - GaN power devices are recognized for their high-voltage and high-frequency performance, improving efficiency and reducing size across various applications [2]. - The demand for GaN devices is expanding in high-voltage applications, particularly in AI server power units and electric vehicle onboard chargers [2]. - ROHM has been proactive in developing GaN power devices, having established a mass-production system for 150V GaN in March 2022 and adopted a 650V GaN process since 2023 [3]. Group 3: Strategic Partnerships - ROHM's collaboration with TSMC has deepened, particularly in the automotive sector, with a partnership established in December 2024 [3]. - Upon completion of the technology transfer, the automotive GaN partnership between ROHM and TSMC will conclude, while both companies will continue to collaborate on enhancing power supply systems [7]. Group 4: Product Branding and Adoption - ROHM's EcoGaN brand focuses on energy conservation and miniaturization by maximizing GaN characteristics [9]. - The EcoGaN series has been adopted in various consumer and industrial products, including Innergie's 45W AC adapter in 2023 and power supplies for AI servers from Murata Power Solutions in 2024 [10].

Core Insights - onsemi and Innoscience have signed a memorandum of understanding to explore opportunities for accelerating the deployment of GaN power devices, specifically in the voltage range of 40-200V [1] - The collaboration aims to combine onsemi's expertise in integrated systems and packaging with Innoscience's established GaN technology and high-volume manufacturing capabilities [1] - The goal is to deliver cost-effective and highly efficient GaN products targeting various markets, including industrial, automotive, telecom infrastructure, consumer, and AI data centers [1] - onsemi plans to start sampling these products in the first half of 2026 [1]

Core Insights - onsemi and Innoscience have signed a memorandum of understanding to explore the expansion of gallium nitride (GaN) power device production, aiming to accelerate market deployment and customer adoption of energy-efficient solutions [1][3][4] - The collaboration combines onsemi's expertise in system integration and packaging with Innoscience's high-volume GaN manufacturing capabilities, targeting a projected total addressable market of $2.9 billion for GaN power devices by 2030 [5][8] Collaboration Details - The partnership will focus on GaN power devices in the voltage range of 40-200V, enhancing offerings for various sectors including industrial, automotive, telecom, consumer, and AI data centers [3][4][6] - The collaboration aims to overcome current limitations in GaN adoption due to cost and supply constraints, enabling faster market availability and broader adoption in mainstream applications [5][6] Market Potential - GaN technology is expected to capture an estimated 11% share of the global power semiconductor market by 2030, with a compound annual growth rate of 42% from 2024 to 2030 [8] - The collaboration is projected to create significant customer value by combining onsemi's packaging and integration expertise with Innoscience's wafer manufacturing capabilities, leading to smaller and more efficient power systems [5][8] Product Applications - The collaboration will enhance product offerings in various applications, including: - Industrial: motor drives for robotics, solar microinverters - Automotive: DC-DC converters - Telecom Infrastructure: DC-DC converters - Consumer: power supplies, adaptors, motor drives - AI Data Center: intermediate bus converters [6][8] Timeline - onsemi anticipates beginning sampling of the new GaN products in the first half of 2026 [9]

Core Insights - STMicroelectronics and Innoscience have signed a joint development agreement focused on GaN technology to enhance power solutions and supply chain resilience [1][2] - The collaboration aims to advance GaN power technology for various applications including consumer electronics, datacenters, automotive, and industrial power systems [2][4] - Innoscience will utilize ST's manufacturing capacity outside China for GaN wafers, while ST will leverage Innoscience's capacity in China for its own GaN wafers [2][7] Company Overview - STMicroelectronics is a global semiconductor leader with a workforce of 50,000, serving over 200,000 customers and focusing on sustainable technology solutions [5] - Innoscience is recognized as the global leader in gallium nitride process innovation and has shipped over 1 billion GaN devices across multiple markets [3][8] - Both companies are committed to improving efficiency and reducing carbon footprints through advanced GaN technology [3][4] Technology and Market Impact - GaN power devices are known for their lower losses, enhanced efficiency, and reduced size and weight, making them suitable for next-generation applications [4] - The partnership is expected to accelerate the adoption of GaN technology, particularly in sectors like renewable energy, AI datacenters, and electric vehicles [4][7] - Innoscience holds 800 patents related to GaN technology, indicating a strong position in the market for reliable and high-performance power devices [8]