Core Insights - onsemi and Innoscience have signed a memorandum of understanding to explore opportunities for accelerating the deployment of GaN power devices, specifically in the voltage range of 40-200V [1] - The collaboration aims to combine onsemi's expertise in integrated systems and packaging with Innoscience's established GaN technology and high-volume manufacturing capabilities [1] - The goal is to deliver cost-effective and highly efficient GaN products targeting various markets, including industrial, automotive, telecom infrastructure, consumer, and AI data centers [1] - onsemi plans to start sampling these products in the first half of 2026 [1]

Core Insights - onsemi and Innoscience have signed a memorandum of understanding to explore the expansion of gallium nitride (GaN) power device production, aiming to accelerate market deployment and customer adoption of energy-efficient solutions [1][3][4] - The collaboration combines onsemi's expertise in system integration and packaging with Innoscience's high-volume GaN manufacturing capabilities, targeting a projected total addressable market of $2.9 billion for GaN power devices by 2030 [5][8] Collaboration Details - The partnership will focus on GaN power devices in the voltage range of 40-200V, enhancing offerings for various sectors including industrial, automotive, telecom, consumer, and AI data centers [3][4][6] - The collaboration aims to overcome current limitations in GaN adoption due to cost and supply constraints, enabling faster market availability and broader adoption in mainstream applications [5][6] Market Potential - GaN technology is expected to capture an estimated 11% share of the global power semiconductor market by 2030, with a compound annual growth rate of 42% from 2024 to 2030 [8] - The collaboration is projected to create significant customer value by combining onsemi's packaging and integration expertise with Innoscience's wafer manufacturing capabilities, leading to smaller and more efficient power systems [5][8] Product Applications - The collaboration will enhance product offerings in various applications, including: - Industrial: motor drives for robotics, solar microinverters - Automotive: DC-DC converters - Telecom Infrastructure: DC-DC converters - Consumer: power supplies, adaptors, motor drives - AI Data Center: intermediate bus converters [6][8] Timeline - onsemi anticipates beginning sampling of the new GaN products in the first half of 2026 [9]

Core Insights - STMicroelectronics and Innoscience have signed a joint development agreement focused on GaN technology to enhance power solutions and supply chain resilience [1][2] - The collaboration aims to advance GaN power technology for various applications including consumer electronics, datacenters, automotive, and industrial power systems [2][4] - Innoscience will utilize ST's manufacturing capacity outside China for GaN wafers, while ST will leverage Innoscience's capacity in China for its own GaN wafers [2][7] Company Overview - STMicroelectronics is a global semiconductor leader with a workforce of 50,000, serving over 200,000 customers and focusing on sustainable technology solutions [5] - Innoscience is recognized as the global leader in gallium nitride process innovation and has shipped over 1 billion GaN devices across multiple markets [3][8] - Both companies are committed to improving efficiency and reducing carbon footprints through advanced GaN technology [3][4] Technology and Market Impact - GaN power devices are known for their lower losses, enhanced efficiency, and reduced size and weight, making them suitable for next-generation applications [4] - The partnership is expected to accelerate the adoption of GaN technology, particularly in sectors like renewable energy, AI datacenters, and electric vehicles [4][7] - Innoscience holds 800 patents related to GaN technology, indicating a strong position in the market for reliable and high-performance power devices [8]