北京铭芯启睿科技有限公司成立于2024年5月，致力于以先进工艺节点阻变存储器（RRAM）为基础，结合存算融合及先进封装技术，解决"内存墙"瓶颈， 面向服务消费、工业与数据中心领域，提供AI高性能"感-存-算"一体化解决方案及定制化存储IP/芯片产品。 经过一年多的快速发展，铭芯启睿在探索高密度存储商业化落地的过程中成果显著。目前，公司已与多家上下游企业建立合作，围绕存储工艺制造技术展开 联合攻关，并深度绑定多家龙头企业客户，共同定义更符合市场需求的优质产品，且已顺利完成产品工程批验证流片。同时，铭芯启睿将加快存算技术产品 的研发，为客户提供更高价值的人工智能存算方案。 来源：猎云网 铭芯启睿联合创始人、董事长刘琦教授表示："未来，我们将持续深耕新型存储与存算技术赛道，聚力创新，以卓越的技术和产品回报信任、服务客户。" 近日，感存算一体化技术产品及解决方案提供商铭芯启睿完成超亿元Pre-A轮融资，本轮融资由国开科创、联想创投领投，中芯聚源、顺禧基金、恒裕投资 跟投，老股东中科创星、小米战投持续加码。 据了解，本轮融资将用于RRAM核心技术研究和人才团队扩充，助力推动RRAM技术产品规模化量产，加速存算技术的落地 ...

Core Viewpoint - The research team led by Professor Peng Hailin from Peking University has developed the world's first low-power, high-performance two-dimensional gate-all-around (GAA) transistor, which surpasses the physical limits of silicon-based transistors in both speed and energy efficiency, potentially driving a new wave of technological innovation in the chip industry [1][9][19]. Group 1: Technology Development - The two-dimensional gate-all-around transistor represents a significant advancement in integrated circuit technology, addressing the limitations of traditional silicon-based transistors by enhancing electrostatic control over the channel, thereby reducing leakage current and power consumption [4][6]. - The new transistor utilizes a novel high-mobility bismuth-based two-dimensional semiconductor material (Bi2O2Se) and a high dielectric constant oxide gate dielectric (Bi2SeO5), achieving superior performance compared to existing silicon-based transistors [9][12]. - The team has successfully created a small logic unit using the two-dimensional gate-all-around transistor and is working towards scaling up for mass production, with applications in high-performance sensors and flexible electronic devices [12][19]. Group 2: Research and Innovation - The development of the two-dimensional gate-all-around transistor is seen as a "cross-generation upgrade," moving beyond the limitations of silicon materials, which are nearing their physical limits [9][16]. - The research team emphasizes the importance of meticulous experimental detail and the ability to recognize and analyze unusual results, which can lead to significant breakthroughs in material science [17][24]. - The team has a strong interdisciplinary background, fostering a culture of innovative thinking and collaboration, which is crucial for advancing semiconductor technology [18][24]. Group 3: Future Prospects - The new transistor technology is projected to achieve speeds approximately 1.4 times that of the most advanced silicon chips while consuming only 90% of their energy, indicating a substantial competitive advantage as manufacturing processes improve [19][21]. - The research team is committed to further exploring the potential of bismuth-based two-dimensional materials, aiming for integrated functionalities in sensing, storage, and computation, which could lead to significant technological advancements [12][16]. - The ongoing research and development efforts are aligned with China's goals for technological self-reliance and innovation in the semiconductor industry, with a focus on practical applications and industrialization of new materials [22][24].