公众号记得加星标⭐️，第一时间看推送不会错过。 背面供电网络（BPDN）直接从晶圆下方向前沿晶体管供电，这种架构变革能够提升处理器性能、大 幅降低功率损耗并提高电源效率。但BPDN也需要许多新的制造策略，例如去除大部分硅晶圆、将纳 米硅通孔（nanoTSV）与晶体管源漏极精确对准，以及采用新的建模方法来降低将高温晶体管限制在 正面和背面互连堆叠之间所带来的热损耗。 尽管如此，领先的集成电路制造商仍在取得显著进展，尤其是在纳米片场效应晶体管（nanosheet FET）从鳍式场效应晶体管（FinFET）几乎同步过渡的情况下。英特尔最近已将其采用带状场效应 晶体管（RibbonFET）和PowerVia的18A工艺投入量产。三星作为早期领导者，于2022年在其3nm 工艺节点上采用了环栅（GAA）晶体管，并计划在其2nm工艺节点（SF2）上引入背面供电技术。台 积电表示将在其2nm工艺节点（N2）上首次推出GAA技术，随后在16Å工艺节点（A16）上推出其超 级电源轨（Super Power Rail）。 背面供电对于需要高功率和快速功率消耗变化的工作负载至关重要，例如 AI 加速器、游戏芯片和图 形处理器。 I ...

Core Viewpoint - The research team led by Professor Peng Hailin from Peking University has developed the world's first low-power, high-performance two-dimensional gate-all-around (GAA) transistor, which surpasses the physical limits of silicon-based transistors in both speed and energy efficiency, potentially driving a new wave of technological innovation in the chip industry [1][9][19]. Group 1: Technology Development - The two-dimensional gate-all-around transistor represents a significant advancement in integrated circuit technology, addressing the limitations of traditional silicon-based transistors by enhancing electrostatic control over the channel, thereby reducing leakage current and power consumption [4][6]. - The new transistor utilizes a novel high-mobility bismuth-based two-dimensional semiconductor material (Bi2O2Se) and a high dielectric constant oxide gate dielectric (Bi2SeO5), achieving superior performance compared to existing silicon-based transistors [9][12]. - The team has successfully created a small logic unit using the two-dimensional gate-all-around transistor and is working towards scaling up for mass production, with applications in high-performance sensors and flexible electronic devices [12][19]. Group 2: Research and Innovation - The development of the two-dimensional gate-all-around transistor is seen as a "cross-generation upgrade," moving beyond the limitations of silicon materials, which are nearing their physical limits [9][16]. - The research team emphasizes the importance of meticulous experimental detail and the ability to recognize and analyze unusual results, which can lead to significant breakthroughs in material science [17][24]. - The team has a strong interdisciplinary background, fostering a culture of innovative thinking and collaboration, which is crucial for advancing semiconductor technology [18][24]. Group 3: Future Prospects - The new transistor technology is projected to achieve speeds approximately 1.4 times that of the most advanced silicon chips while consuming only 90% of their energy, indicating a substantial competitive advantage as manufacturing processes improve [19][21]. - The research team is committed to further exploring the potential of bismuth-based two-dimensional materials, aiming for integrated functionalities in sensing, storage, and computation, which could lead to significant technological advancements [12][16]. - The ongoing research and development efforts are aligned with China's goals for technological self-reliance and innovation in the semiconductor industry, with a focus on practical applications and industrialization of new materials [22][24].