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十万零件筑就的工业明珠!中国光刻机突围战打响
材料汇· 2025-07-26 15:45
Core Viewpoint - The article emphasizes the critical role of lithography machines in semiconductor manufacturing, highlighting their technological evolution and the importance of resolution, which is the ultimate goal in the development of lithography technology [2][8]. Group 1: Lithography Technology - Lithography is a key technology in wafer manufacturing, with lithography machines being the most valuable and technically challenging equipment in the process [8]. - The core of lithography technology involves transferring chip design patterns onto silicon wafers through a process that includes exposure, development, and cleaning [9]. Group 2: Resolution as a Key Indicator - Resolution is defined as the minimum feature size that can be clearly projected onto a wafer, influenced by factors such as light wavelength, numerical aperture (NA), and process factor (k1) [15][25]. - The evolution of lithography has seen a significant reduction in light source wavelengths, with the current extreme ultraviolet (EUV) light source at 13.5nm being the most advanced [35][36]. Group 3: Key Components of Lithography Machines - Lithography machines consist of three core systems: the light source system, optical system, and workpiece stage system [63]. - The light source system provides the energy for exposure, with the most advanced sources being EUV, which require high precision in control [67][68]. - The optical system is responsible for light propagation and aberration correction, utilizing complex lens assemblies to achieve high precision [63][64]. Group 4: Historical Development of Lithography Leaders - The lithography machine industry has seen a shift in leadership through three main eras, with ASML currently dominating the advanced lithography market due to its technological advancements [4][5]. - The transition from early American companies to Japanese firms, and now to ASML, illustrates the impact of technological breakthroughs and government support on industry leadership [4][5]. Group 5: Domestic Lithography Development - China's lithography machine industry has made significant progress since the implementation of the "02 Special Project" in 2006, although it still lags behind international standards [6]. - Domestic manufacturers like Shanghai Micro Electronics have made strides in the mid-to-low-end market, but face challenges in high-end lithography machine production [6].
下一代光刻机,太难了!
半导体行业观察· 2025-06-05 01:37
Core Viewpoint - The article discusses the advancements in high numerical aperture (NA) EUV lithography systems, particularly the transition from 0.33 NA to 0.55 NA, highlighting the implications for multi-patterning techniques and image quality [1][3]. Group 1: Numerical Aperture and Imaging - The increase in numerical aperture (NA) from 0.33 to 0.55 allows for the use of more diffraction orders, resulting in brighter and narrower peaks in imaging [1][3]. - Higher NILS (Normalized Image Log Slope) is achieved due to sharper peaks, which reduces the impact of random effects from photon absorption noise [3][11]. - Direct printing images at 0.33 NA are more prone to quality degradation compared to 0.55 NA, necessitating higher doses to maintain low noise levels [3][13]. Group 2: Multi-Patterning Techniques - The article illustrates that DUV (Deep Ultraviolet) double patterning can achieve similar results to EUV by splitting patterns into separate exposures, improving NILS due to increased spatial frequency range [5][9]. - It is anticipated that high NA EUV will require two patterning steps, while low NA EUV will require three, and DUV will require four [5][9]. Group 3: Depth of Focus and Resist Thickness - The article emphasizes that higher numerical apertures lead to a wider range of spatial frequencies, which can result in greater phase differences and loss of image contrast due to defocus [9][11]. - A depth of focus less than 30 nanometers for high NA systems implies that resist thickness must also be under 30 nanometers, potentially leading to significant resist loss [13][15]. - The article suggests that future hyper NA systems (at least 0.75) may exacerbate these issues, as they are unlikely to provide sufficient depth of focus for reasonable resist thickness [13].