Core Insights - The article discusses the transformation of a semiconductor manufacturing plant in Austin, Texas, into the Texas Instruments Research Institute (TIE), focusing on advanced packaging for 3D heterogeneous integration (3DHI) [2][3] - The facility aims to be the world's only advanced packaging plant dedicated to 3DHI, which involves stacking chips made from various materials, enhancing performance significantly compared to traditional silicon-on-silicon stacking [2][3] Funding and Development - The Texas state government is investing $552 million in the construction of the plant, while DARPA is contributing $840 million, with the facility expected to become self-sustaining after a five-year mission [3][4] - TIE is described as a startup with significant growth potential, and the construction is progressing rapidly, with all equipment expected to be installed by Q1 2026 [3][4] Technical Challenges and Solutions - A major challenge for TIE is ensuring that different materials can be used predictably in manufacturing processes due to their varying mechanical properties [4] - The development of process design kits and packaging design kits is crucial for achieving the necessary precision in connecting chips [4][5] Project Applications - TIE will refine its technology through three 3DHI projects: phased array radar, focal plane array infrared imager, and compact power converters, which represent the operational model of the facility [5] - The facility will operate as a "multi-variety, small-batch" plant, contrasting with traditional high-volume silicon wafer foundries [5] Research Opportunities - The NGMM initiative provides research opportunities in areas such as new thermal films, microfluidic cooling technologies, and complex packaging failure mechanisms [5][6] - The collaboration between NGMM and TIE is seen as a unique opportunity for innovation in the semiconductor industry [6]

如果您希望可以时常见面，欢迎标星收藏哦~ 随着晶体管数量的持续增长，我们越来越接近硅的物理和热极限。随着晶体管尺寸的缩小， 漏电流不断增大，每平方毫米产生的热量也越来越难以消散。近年来，业界已转向先进的封 装技术（例如小芯片、3D堆叠和中介层），以突破这些限制，而不是强行突破。如今，性能 提升不再仅仅依赖于缩小晶体管尺寸，而更多地依赖于巧妙的架构、互连和热设计策略。 为了对这些涉及热量和计算机在纳米尺度上工作方式的物理问题给出适当的答案，本文将涉 及热量的基本科学、热量在电子器件中产生的方式和原因，以及我们为控制热量而开发的各 种方法。 热的基础知识 如果你还记得高中物理，热量其实就是构成我们世界的原子和分子的随机运动。当一个分子的动能 高于另一个分子时，我们说它更热。当两个物体接触时，热量会从一个物体传递到另一个物体，持 续传递直到两者达到平衡。这意味着较热的物体会将部分热量传递给较冷的物体，最终温度会介于 两者之间。 传热所需的时间取决于相关材料的热导率。热导率衡量的是材料传导热量的能力。 像泡沫塑料这样的绝缘体具有相对较低的热导率，约为 0.03，而像铜这样的导体具有较高的热导 率，约为 400。在两个 ...