在芯片散热中，TIM1和TIM2发挥着"双导热引擎"作用。英伟达GPU热功耗从H100的700W升至B200的 1200W，手机芯片热流密度突破15W/cm2，散热需求急剧提升。在消费电子领域，随着智能手机、平板 电脑等设备性能和功耗的增加，散热方案不断升级。从传统的导热界面材料加石墨膜，发展到热管、均 温板等组合方案，高导热材料的渗透率逐步提升。同时，VR/AR设备、固态硬盘、智能音箱、无线充 电器等电子产品也对散热提出了更高的要求，热界面材料针对细分场景提供精准散热方案。 新材料助力TIM散热能力突破，国产化率有望不断提升 中信建投（601066）发布研报称，随着高密度芯片和封装技术发展，电子元器件热功耗持续攀升，散热 需求急剧提升。我国热界面材料(TIM)市场规模从2018年的9.75亿元增长至2023年的18.75亿元，年复合 增长率达13.97%，增速显著。芯片散热中，TIM1与TIM2构成"双导热引擎"，TIM1直接接触芯片，需低 热阻、高导热性，以石墨烯、氮化硼等为填料，导热系数较高;TIM2适配均热板与散热器，兼顾散热效 率与成本，导热系数通常为5-10W/m.K，二者通过填充空隙降低接触热阻 ...

Group 1 - The core innovation is the development of high-frequency and thermal conductive graphene-doped polytetrafluoroethylene (GO-PTFE) material, which meets the high-frequency insulation and efficient heat dissipation requirements for chips, breaking the long-standing foreign monopoly [1][3][5] - The GO-PTFE material has been certified by several leading companies in the communication equipment manufacturing and high-end chip packaging industries, with cooperative orders exceeding 140 million yuan [1][5] - The research team, led by Dr. Zhen Zhiyong, has been working on this material since 2015, addressing the challenges posed by traditional PTFE materials that hinder heat dissipation despite their excellent insulation properties [3][5] Group 2 - The team aims to establish a fully independent intellectual property system for high-frequency thermal management materials, ensuring that China's core technology for chip thermal management is firmly in its own hands [5] - The successful development of GO-PTFE material took seven years, culminating in 2022, and led to the establishment of Guangzhou Sha Kui Technology Co., Ltd. for further research and testing [5] - The performance of the GO-PTFE material has been validated by testing reports from domestic industry leaders, confirming its excellent thermal conductivity, stable low dielectric constant, and high peel strength [5]

如果您希望可以时常见面，欢迎标星收藏哦~ 随着晶体管数量的持续增长，我们越来越接近硅的物理和热极限。随着晶体管尺寸的缩小， 漏电流不断增大，每平方毫米产生的热量也越来越难以消散。近年来，业界已转向先进的封 装技术（例如小芯片、3D堆叠和中介层），以突破这些限制，而不是强行突破。如今，性能 提升不再仅仅依赖于缩小晶体管尺寸，而更多地依赖于巧妙的架构、互连和热设计策略。 为了对这些涉及热量和计算机在纳米尺度上工作方式的物理问题给出适当的答案，本文将涉 及热量的基本科学、热量在电子器件中产生的方式和原因，以及我们为控制热量而开发的各 种方法。 热的基础知识 如果你还记得高中物理，热量其实就是构成我们世界的原子和分子的随机运动。当一个分子的动能 高于另一个分子时，我们说它更热。当两个物体接触时，热量会从一个物体传递到另一个物体，持 续传递直到两者达到平衡。这意味着较热的物体会将部分热量传递给较冷的物体，最终温度会介于 两者之间。 传热所需的时间取决于相关材料的热导率。热导率衡量的是材料传导热量的能力。 像泡沫塑料这样的绝缘体具有相对较低的热导率，约为 0.03，而像铜这样的导体具有较高的热导 率，约为 400。在两个 ...

Core Viewpoint - The article discusses the challenges posed by high-power AI chips, particularly focusing on heat generation and warping issues due to increased power density and chip size, emphasizing the need for efficient thermal interface materials (TIM) to ensure stable and effective operation of AI chips [1][3]. Group 1: High-Power AI Chip Challenges - The rapid development of data centers centered around high-performance AI chips has led to a significant increase in power consumption, exemplified by the H100 chip with a maximum power of 700W and a size of 814mm² [1]. - The reliability of chips decreases by approximately 50% for every 10°C increase in temperature, highlighting the critical importance of effective heat dissipation [1]. Group 2: Thermal Interface Materials (TIM) - Different levels of TIM are categorized, including TIM1.5 (direct connection between bare chip and heat sink), TIM1 (between chip and lid), and TIM2 (between lid and heat sink) [2]. - TIM for high-power large-size chips must meet specific requirements: low bond line thickness (≤0.3mm), low thermal resistance (≤0.1℃cm²/W), and stress absorption to counteract warping [3]. Group 3: Solutions by Hongfu Cheng - Hongfu Cheng has developed a vertical graphene thermal pad that addresses the challenges of heat dissipation for high-power large-size chips, leveraging their experience in oriented carbon fiber thermal pads [4][8]. - The vertical graphene thermal pad achieves a low thermal resistance of 0.04℃cm²/W through orientation technology and appropriate packaging pressure [5]. - The internal porous structure of the thermal pad allows it to adapt quickly to local deformations, preventing material from being pushed out and ensuring long-term reliability [6]. Group 4: Performance Advantages - Compared to traditional thermal interface materials like thermal grease and indium sheets, the graphene thermal pad does not suffer from creep or pump-out risks, maintains a complete thermal interface, and provides uniform heat conduction without hotspots [11]. - The manufacturing process for the graphene thermal pad is simpler and allows for automated assembly, significantly reducing packaging time and equipment costs compared to indium sheets [11]. Group 5: Reliability and Commercialization - The graphene thermal pads have undergone rigorous testing, showing a thermal resistance change rate of less than 5% after 1000 hours of high-temperature and thermal cycling tests, indicating superior reliability compared to conventional materials [7]. - Hongfu Cheng has established automated production lines and achieved mass delivery, gaining recognition from leading companies in the chip industry for product quality [8].