Core Viewpoint - Samsung Electronics is actively developing next-generation DRAM solutions to replace HBM (High Bandwidth Memory), with technologies like PIM (Processing-In-Memory) currently under standardization discussions in semiconductor organizations [1][2]. Group 1: Next-Generation DRAM Technologies - Key next-generation DRAM technologies include PIM, VCT (Vertical Channel Transistor), CXL (Compute Express Link), and LLW (Low Latency, High Bandwidth) DRAM, which are being developed for various potential customers and applications in the AI era [1][2]. - LPDDR (Low Power Double Data Rate) is currently commercialized up to LPDDR5X, with the standardization of the next generation, LPDDR6, nearing completion [2]. - PIM technology, which allows data processing capabilities within memory chips, is expected to enhance energy efficiency when combined with LPDDR [2]. - CXL is a next-generation interconnect interface designed for high-performance servers, enabling efficient connections between CPUs, GPU accelerators, DRAM, and storage devices, expanding memory bandwidth and capacity [2]. Group 2: Customization in HBM Market - The importance of "Custom HBM" in the next-generation HBM market is emphasized, with the base die of HBM4 being manufactured by foundries, allowing for product customization based on customer needs [3][4]. - This shift marks a significant transformation for Samsung's memory division, indicating a move towards tailored memory products for clients [4].