Core Viewpoint - Major memory companies are accelerating investments in 1c (6th generation 10nm) DRAM, with Samsung Electronics leading the charge in production line construction, while SK Hynix and Micron are also making significant moves in this area [2][3]. Group 1: Investment and Production Plans - Samsung Electronics has begun constructing a new production line for 1c DRAM at its P4 plant in Pyeongtaek and is also transitioning its Hwaseong Line 17 for 1c DRAM production, aiming for a maximum capacity of 60,000 wafers per month by the end of this year [2]. - SK Hynix plans to start its transition investment for 1c DRAM in the second half of this year, with full-scale implementation expected next year, likely at its Icheon M14 factory, which is currently being repurposed from NAND to DRAM production [2][3]. - Micron has received a subsidy of up to 536 billion yen (approximately 4.7 trillion KRW) from the Japanese government for its new DRAM factory in Hiroshima, which will focus on the 1γ process, expected to be operational by 2027 [3]. Group 2: Technological Advancements - The 1c process is anticipated to be utilized not only for high-value DRAM for servers but also for HBM4E (7th generation HBM), which is a key area of focus for SK Hynix [3].