Core Insights - The article discusses the advancements in two-dimensional (2D) materials and their integration into electronic devices, particularly in the semiconductor industry, highlighting the development of a fully functional 2D flash chip by a research team from Fudan University [3][4]. Group 1: Research Achievements - The research team led by Professor Zhou Peng and researcher Liu Chunsen published a paper in Nature on October 8, 2025, detailing the world's first 2D-silicon-based hybrid architecture chip, which addresses key challenges in engineering new 2D information devices [3]. - The team developed a fully functional 2D NOR flash memory chip using the ATOM2CHIP technology, achieving a high yield of 94.34% through a comprehensive on-chip process that integrates various architectural designs [4]. - The research also includes the development of a sub-nanosecond flash memory device, "PoX," which can achieve an erasure speed of 400 picoseconds, breaking existing speed limits in storage technology [7]. Group 2: Technological Innovations - The ATOM2CHIP technology provides a complete framework for bridging the gap between emerging device concepts and practical chip applications, incorporating a full-stack on-chip process and cross-platform system design [4]. - The research team successfully created the first 32-bit RISC-V microprocessor prototype based on 2D semiconductor materials, capable of performing up to 4.2 billion arithmetic operations and supporting a program of up to 1 billion instructions [9].

Core Viewpoint - The research team from Fudan University has developed a groundbreaking "PoX" picosecond flash memory device that significantly enhances data storage speed and efficiency, addressing the demands of artificial intelligence (AI) applications [1][3][10] Group 1: Technology Overview - The existing memory architecture, which combines volatile and non-volatile storage, is inadequate for the high computational power and energy efficiency required in the AI era [3][4] - The "PoX" device achieves a write speed of 400 picoseconds, equating to 2.5 billion operations per second, which matches the operational speed of computer chips [5][10] - The device operates at a voltage below 5 volts, indicating potential for further energy consumption reduction [5] Group 2: Development Journey - The research team has spent a decade focusing on overcoming the limitations of current storage technologies, culminating in the development of the "PoX" device [4][9] - In 2018, the team created a prototype that was 10,000 times faster than traditional USB drives, addressing the challenge of balancing write speed and non-volatility [4] - The team has made continuous advancements, achieving significant milestones in 2021, 2023, and 2024, including the first large-scale integration verification of a 1Kb nanosecond ultra-fast flash memory array [4][10] Group 3: Innovation Mechanism - The team innovated from fundamental principles, developing a new mechanism for charge injection that allows for unlimited super-injection, thus breaking speed barriers [7][8] - Traditional flash memory speed is limited by physical constraints, whereas the new mechanism enables a dramatic increase in speed, likened to "flying" rather than "climbing stairs" [8] Group 4: Future Implications - The "PoX" technology is expected to reshape the global storage technology landscape, drive industry upgrades, and create new application scenarios [10] - The team aims to accelerate the industrialization of the "PoX" device, with ongoing efforts to achieve small-scale production [10] - The initiative is positioned to support China's semiconductor industry in overcoming challenges and achieving technological leadership [10]