Core Viewpoint - The article discusses the evolution of semiconductor technology, particularly the transition from traditional planar transistors to FinFET technology, which has revitalized Moore's Law and enabled significant advancements in chip performance and efficiency [1][2][4]. Group 1: Historical Context - Moore's Law, established by Gordon Moore in 1965, predicted the doubling of transistor counts on chips approximately every two years, driving exponential growth in computing power [1]. - By the late 1990s, planar MOSFETs reached physical limits, leading to increased leakage currents and power consumption, which threatened performance and battery life [1][2]. Group 2: FinFET Technology - FinFET, invented by Dr. Hu, is a three-dimensional transistor structure that significantly reduces leakage current and improves switching efficiency, allowing for scaling below 20 nanometers [2][3]. - Intel first commercialized FinFET technology in its 22nm Ivy Bridge processors in 2011, followed by TSMC and Samsung adopting it for 16nm and 14nm nodes by 2014 [2]. Group 3: Performance Improvements - The 22nm FinFET process by Intel achieved a 37% performance increase at the same power level compared to 32nm planar chips, or a 50% reduction in power consumption for the same performance [3]. - TSMC's 7nm FinFET node enabled over 90 million transistors per square millimeter, a feat unachievable with planar technology [3]. Group 4: Economic and Social Impact - FinFET technology has sustained the effectiveness of Moore's Law, contributing to the projected global semiconductor market size of $600 billion by 2024, driven by demand for faster, smaller, and more energy-efficient devices [4]. - The advancements enabled by FinFET support modern technologies, including AI models for chatbots and autonomous vehicles, showcasing its broad impact on various sectors [4]. Group 5: Future Challenges and Innovations - As semiconductor scaling approaches 1 nanometer, challenges such as quantum tunneling and heat dissipation arise, prompting exploration of Gate-All-Around (GAA) transistors and two-dimensional materials [4][5]. - FinFET has laid the groundwork for these innovations, demonstrating that architectural creativity can overcome physical limitations, thus inspiring future generations of engineers [4][5].