Core Insights - The article discusses the historical context and current relevance of FD-SOI technology in the semiconductor industry, particularly in China, as it faces challenges in advanced process nodes due to geopolitical factors [2][21]. Group 1: Historical Context - In the early 2010s, Soitec, a leader in SOI substrate materials, faced financial difficulties due to the slow growth of the FD-SOI market and required government loans to survive [1]. - The Chinese National Integrated Circuit Industry Investment Fund (the "Big Fund") considered investing in Soitec but ultimately chose to focus on FinFET technology, reflecting a broader industry skepticism towards FD-SOI at that time [1][2]. - The decision by Intel to fully commit to FinFET technology led to a domino effect, causing other major players like TSMC and Samsung to follow suit, effectively sidelining FD-SOI [9][10]. Group 2: Technological Divergence - Two distinct solutions emerged in the late 1990s to address the limitations of traditional CMOS technology: FinFET and FD-SOI [3][5]. - FinFET technology enhances control over electrical currents by utilizing a three-dimensional structure, while FD-SOI employs a thin insulating layer to prevent leakage, offering advantages in power consumption and manufacturing simplicity [5][7]. - Despite its advantages, FD-SOI faced challenges due to stringent substrate material requirements and a lack of industry support, leading to its marginalization [8][9]. Group 3: Recent Developments - In 2016, Shanghai Silicon Industry Investment Co. established a strategic partnership with Soitec, acquiring approximately 14.5% of its shares, which opened doors for Chinese semiconductor firms to access SOI technology [10][12]. - The investment has yielded significant returns and has been pivotal in developing China's capabilities in FD-SOI technology, which is now seen as a viable alternative to FinFET in specific applications [12][21]. - FD-SOI technology is gaining traction in markets such as IoT, automotive electronics, and RF communications, where its lower manufacturing costs and power efficiency are advantageous [13][21]. Group 4: Ecosystem Development - Over the past decade, a complete FD-SOI ecosystem has been developing in China, encompassing substrate materials, wafer foundries, EDA tools, and IP design [14][16]. - Key players include GlobalFoundries, which has been a major proponent of FD-SOI technology, and various Chinese companies adopting FD-SOI for IoT chip designs [16][17]. - The ecosystem is still smaller compared to the well-established FinFET market, which presents challenges in scaling and cost competitiveness [18][19]. Group 5: Future Outlook - The article suggests that FD-SOI may not compete directly with FinFET in high-performance computing but can carve out a niche in emerging markets [20][21]. - The global FD-SOI market is projected to grow significantly, from approximately $700 million in 2022 to over $4 billion by 2027, indicating a compound annual growth rate exceeding 30% [20]. - The ongoing development of FD-SOI technology in China represents a strategic path for maintaining technological capabilities amid external pressures [21][22].

【文/观察者网 心智研究所】 2014年前后，法国SOI衬底材料龙头Soitec正经历着公司历史上最艰难的时刻。由于FD-SOI市场迟迟未 能起量，这家掌握着独门Smart-Cut技术的法国公司一度面临资金链断裂的危机，需要依靠法国政府的 贷款才能维持运营。 与此同时，中国的国家集成电路产业投资基金（"大基金"）刚刚成立，正在全球范围内寻找投资标的。 据芯原股份创始人戴伟民博士回忆，当时大基金的考察团曾有机会投资Soitec，考察团中有人说了一句 后来广为流传的话： "做FinFET是等死，做FD-SOI是找死。" 这句话深刻反映了当时国内产业界对FD-SOI的普遍认知——在FinFET当时已经成为绝对主流，而且形 成技术有序迭代的情况下，中国大陆半导体如果追者FinFET技术路线跑，可能会永远棋差一步，当时 普遍有这种焦虑："为啥我们投入的钱越来越多，和西方的差距反而不见缩小？"然而，另一条路——逆 势押注FD-SOI似乎是一条看不到出路的死胡同。 十年之后的今天，当全球半导体产业格局因地缘政治而剧烈重构，当中国芯片产业在先进制程领域遭 遇"卡脖子"困境，这条曾被主流产业抛弃的技术路线，正在以一种出人意料的 ...

Financial Data and Key Metrics Changes - GlobalFoundries reported third-quarter revenue of $1.688 billion, flat compared to the prior quarter and a 3% decrease year-over-year [28] - Gross profit for the third quarter was $439 million, translating to a gross margin of approximately 26%, with an expansion of 80 basis points sequentially and 130 basis points year-over-year [31] - Operating profit was $260 million, resulting in an operating margin of 15.4%, which is at the high end of the guidance range and 180 basis points above the prior year period [31] - Net income for the third quarter was $232 million, an increase of approximately 1% from the prior year period, leading to diluted earnings of $0.41 per share [32] Business Line Data and Key Metrics Changes - Automotive revenue decreased approximately 17% sequentially but increased 20% year-over-year, driven by share and content expansion [29] - Smart mobile devices revenue increased approximately 10% sequentially but decreased approximately 13% year-over-year, primarily due to one-time pricing adjustments [29] - Home and industrial IoT revenue decreased approximately 14% sequentially and 16% year-over-year, mainly due to a reduction in wafer revenue associated with aerospace and defense applications [30] - Communications infrastructure and data center revenue increased approximately 2% sequentially and 32% year-over-year, with expectations for full-year 2025 revenue growth in the low 20% range [30] Market Data and Key Metrics Changes - The automotive segment represented approximately 18% of total revenue in the third quarter [22] - Smart mobile devices accounted for approximately 45% of total revenue, while home and industrial IoT represented approximately 15% [24] - Communications infrastructure and data center contributed approximately 10% of total revenue [25] Company Strategy and Development Direction - GlobalFoundries is focusing on scaling AI capabilities in data centers and expanding its optical networking market, with an estimated CAGR of approximately 40% through 2030 [8][9] - The company is committed to reshoring semiconductor supply chains to the U.S., with a $16 billion investment to expand U.S. manufacturing capabilities [15][16] - The strategy includes diversifying the business towards high-margin product platforms, with automotive expected to approach $1.5 billion in annual revenue by 2025 [20] Management's Comments on Operating Environment and Future Outlook - Management expressed confidence in the company's ability to capture long-term growth opportunities driven by secular trends in AI and semiconductor demand [18] - The ongoing geopolitical tensions and supply chain challenges are prompting customers to seek non-China, non-Taiwan supply chains, which GlobalFoundries is well-positioned to support [14][15] - The company anticipates strong demand for its silicon photonics and GaN technologies, with significant growth expected in these areas [10][52] Other Important Information - GlobalFoundries secured nearly 150 new design wins across its end markets in the third quarter, representing more than 50% growth from the same quarter a year ago [18] - The company has a strong balance sheet with approximately $4.2 billion in cash and cash equivalents and total debt of $1.2 billion [33] Q&A Session Summary Question: Long-term differentiation of silicon photonics business - Management highlighted that GlobalFoundries has been early in developing silicon photonics, focusing on best-in-class device performance and building an ecosystem to support customer design needs [36][37] Question: Capital and CapEx needs for silicon photonics growth - Management indicated that while CapEx has been moderated, there is an expectation for a pickup in CapEx in 2026 to support the growth of the silicon photonics business [39][40] Question: Revenue guidance for smart mobile devices - Management expects a low double-digit % decline year-over-year for smart mobile devices in the fourth quarter, influenced by previous pricing adjustments [45] Question: Onshoring demand and pipeline - Management noted strong engagement from customers regarding U.S. onshoring, with a significant pipeline indicating a durable secular shift [48][49] Question: GaN strategy and competition - Management expressed excitement about GaN technology, emphasizing its role in improving power density and reducing losses, with a focus on high-quality, reliable devices [52][53]

Core Viewpoint - The article discusses the evolution of semiconductor technology, particularly the transition from traditional planar transistors to FinFET technology, which has revitalized Moore's Law and enabled significant advancements in chip performance and efficiency [1][2][4]. Group 1: Historical Context - Moore's Law, established by Gordon Moore in 1965, predicted the doubling of transistor counts on chips approximately every two years, driving exponential growth in computing power [1]. - By the late 1990s, planar MOSFETs reached physical limits, leading to increased leakage currents and power consumption, which threatened performance and battery life [1][2]. Group 2: FinFET Technology - FinFET, invented by Dr. Hu, is a three-dimensional transistor structure that significantly reduces leakage current and improves switching efficiency, allowing for scaling below 20 nanometers [2][3]. - Intel first commercialized FinFET technology in its 22nm Ivy Bridge processors in 2011, followed by TSMC and Samsung adopting it for 16nm and 14nm nodes by 2014 [2]. Group 3: Performance Improvements - The 22nm FinFET process by Intel achieved a 37% performance increase at the same power level compared to 32nm planar chips, or a 50% reduction in power consumption for the same performance [3]. - TSMC's 7nm FinFET node enabled over 90 million transistors per square millimeter, a feat unachievable with planar technology [3]. Group 4: Economic and Social Impact - FinFET technology has sustained the effectiveness of Moore's Law, contributing to the projected global semiconductor market size of $600 billion by 2024, driven by demand for faster, smaller, and more energy-efficient devices [4]. - The advancements enabled by FinFET support modern technologies, including AI models for chatbots and autonomous vehicles, showcasing its broad impact on various sectors [4]. Group 5: Future Challenges and Innovations - As semiconductor scaling approaches 1 nanometer, challenges such as quantum tunneling and heat dissipation arise, prompting exploration of Gate-All-Around (GAA) transistors and two-dimensional materials [4][5]. - FinFET has laid the groundwork for these innovations, demonstrating that architectural creativity can overcome physical limitations, thus inspiring future generations of engineers [4][5].

Financial Data and Key Metrics Changes - First quarter revenue was $1,585 million, representing a 13% decrease quarter-over-quarter but a 2% increase year-over-year [25] - Non-IFRS adjusted free cash flow was $165 million, translating to a free cash margin of approximately 10% [8][30] - Gross profit for the first quarter was $379 million, resulting in a gross margin of approximately 23.9% [28] Business Line Data and Key Metrics Changes - Automotive revenue represented approximately 19% of total revenue, decreasing 25% sequentially but increasing 16% year-over-year [27] - Smart mobile devices accounted for approximately 37% of total revenue, with a 21% sequential decrease and a 14% year-over-year decrease [26] - Communication infrastructure and data center revenue increased approximately 2% sequentially and 45% year-over-year, representing about 11% of total revenue [28] Market Data and Key Metrics Changes - The automotive market is expected to see meaningful year-over-year revenue growth in 2025, driven by increasing silicon content in vehicles [15] - The IoT market returned to year-over-year growth in Q1, but uncertainty remains for the second half of the year due to tariffs [19] - The communication infrastructure and data center market is projected to grow in the high teens for the full year 2025 [54] Company Strategy and Development Direction - The company is focused on free cash flow generation and has invested over $7 billion in facilities since 2021 to support growth [10][11] - The serviceable addressable market is anticipated to grow at approximately 10% per annum through the end of the decade [11] - The company aims to leverage its differentiated technologies and global footprint to gain market share in critical end markets [11][12] Management's Comments on Operating Environment and Future Outlook - Management acknowledged ongoing trade and tariff disputes impacting the semiconductor supply chain and end market demand dynamics [9] - Despite uncertainties, the long-term demand for essential chip technologies remains strong, with a robust financial profile and declining leverage [13] - The company is monitoring the changing landscape closely and diversifying sourcing strategies to mitigate potential impacts [9][10] Other Important Information - The company expects total revenue for Q2 2025 to be approximately $1,675 million, with gross margin guidance of around 25% [31] - The company has a strong balance sheet with $4.7 billion in liquidity and a total debt of $1.1 billion [13][30] Q&A Session Summary Question: Impact of tariffs on revenue and manufacturing flexibility - Management noted no significant short-term impacts from tariffs on orders, but they are closely monitoring the situation for potential medium-term effects [38][40] Question: ASP trends and gross margin maintenance - ASPs are expected to decline mid-single digits due to product mix changes, but gross margins can be maintained through better utilization and structural cost improvements [42][46] Question: Growth expectations in communication infrastructure and data center - Management expects high teens growth in the communication infrastructure and data center segment for 2025, driven by substantial investments in data centers [54][56] Question: Outlook for automotive and smart mobile devices - The automotive segment is expected to continue growing, while the smart mobile device market is anticipated to remain flattish in 2025 [61][66] Question: Long-term margin targets - The company aims to exit 2025 with a gross margin of 30%, supported by improved utilization and product mix [70][78]

如果您希望可以时常见面，欢迎标星收藏哦~ 在台积电早起那的北美技术研讨会上，台积电业务发展和海外运营办公室高级副总裁兼副联 席首席运营官Kevin Zhang称其为"最后也是最好的 FinFET 节点"。台积电的战略是开发N3 工艺的多种变体，打造一个全面可定制的硅片资源。 Kevin Zhang表示："我们的目标是将集成硅片性能打造成为一个平台。" 截至目前，N3 现有 或计划推出的版本包括N3B、N3E、N3P、N3X、N3S、N3RF、N3A和N3C。 换而言之，自英特尔在2009 年的开发者大会上推出了 22 纳米 FinFET 晶圆后，这个改变了 芯片行业的设计，从某种程度看，走到了尽头。 FinFET，英特尔掀起革命 对芯片制造行业的读者应该知道，在过去几十年里，芯片的晶体管已经从planer走向了FinFet。至 于为什么用FinFet，以及这个进步的意义，我们需要从晶体管的原理说起。 本质上，在一颗芯片中，晶体管的目标是充当一个高速电子开关。导通时，电流从晶体管的源极流 向漏极。截止时，电流停止。反型层（上图蓝线）是电流实际流动的地方。 在理想情况下，晶体管需要做三件事： 1) 开启时允许尽可 ...