Core Viewpoint - The successful delivery of the world's first 12-inch single-wafer silicon carbide (SiC) epitaxy equipment by Jing Sheng Electromechanical marks a significant breakthrough in SiC epitaxy technology, enhancing production efficiency and reliability in the industry [1] Group 1: Company Developments - Jing Sheng Electromechanical delivered the first 12-inch single-wafer SiC epitaxy equipment to leading industry player Hantian Tiancheng on December 24, 2025 [1] - The new equipment features a unique vertical airflow intake design, improving precise temperature control and gas distribution during the epitaxy process [1] - The equipment includes automated loading/unloading modules and one-click automatic PM assistance, significantly enhancing particle control and maintenance efficiency [1] Group 2: Industry Impact - Hantian Tiancheng has launched the world's first 12-inch high-quality SiC epitaxy wafer, which improves production efficiency for downstream power devices and reduces unit manufacturing costs for SiC chips [1] - The introduction of 12-inch wafers allows for a significant increase in the number of chips per wafer, with 12-inch wafers accommodating 4.4 times the number of chips compared to 6-inch wafers and 2.3 times compared to 8-inch wafers under the same production process [1]

Core Viewpoint - The company Hantian Tiancheng has successfully developed the world's first 12-inch high-quality silicon carbide (SiC) epitaxial wafer, which is expected to significantly enhance production efficiency and reduce manufacturing costs in the SiC industry [1][3]. Group 1: Technological Breakthrough - The 12-inch SiC wafer can carry 4.4 times more devices compared to the current mainstream 6-inch wafers and 2.3 times more than 8-inch wafers, due to its larger diameter [3]. - The new wafer technology is crucial for the large-scale and low-cost application of SiC in various sectors, including electric vehicles, photovoltaic power generation, AI power supplies, rail transportation, smart grids, and aerospace [3]. Group 2: Performance Metrics - Hantian Tiancheng's 12-inch SiC wafers exhibit excellent performance metrics, with a uniformity control of epitaxial layer thickness within 3%, doping concentration uniformity of ≤8%, and a yield rate greater than 96% for 2mm×2mm chips [5]. - The company has already initiated preparations for mass supply of the 12-inch SiC wafers, indicating readiness for market demand [5]. Group 3: Market Position and Industry Context - Hantian Tiancheng is recognized as the first Chinese company to achieve commercial supply of 3-inch, 4-inch, and 6-inch SiC epitaxial wafers, and has become the largest supplier of SiC epitaxial wafers globally in 2023, with a projected market share exceeding 31% in 2024 [5]. - The city of Xiamen has established a comprehensive industrial layout covering design, manufacturing, testing, and equipment materials, positioning itself as a leader in the third-generation semiconductor industry [5].