Core Viewpoint - The company has accumulated relevant technology in the field of solid-state transformers (SST) and is advancing the development and industrialization of third-generation power semiconductor devices such as silicon carbide (SiC) and gallium nitride (GaN) to support high-voltage, high-power applications [1] Group 1 - The company currently has 1700V GWB module products that are compatible with solid-state transformers [1] - The company will continue to monitor market dynamics and timely promote the industrialization of relevant technological achievements [1] - The focus is on providing support for the development of core power electronic equipment [1]

Core Viewpoint - The company has accumulated relevant technology in the field of solid-state transformers (SST) and is focused on the development and industrialization of third-generation power semiconductor devices such as silicon carbide (SiC) and gallium nitride (GaN) to support high-voltage, high-power applications [1] Group 1 - The company currently has 1700V GWB module products that are compatible with solid-state transformers [1] - The company will continue to monitor market dynamics and timely advance the industrialization of relevant technological achievements [1] - The ongoing research and development efforts aim to cover a broader range of high-voltage, high-power application scenarios [1]

Core Viewpoint - The company, Hongwei Technology, has not established a direct commercial partnership with NVIDIA, indicating a focus on independent product development in the high-voltage direct current (HVDC) sector [1] Group 1: Company Developments - Hongwei Technology is responding to the demand for high-voltage platforms in the HVDC field, specifically for 240V/±400V/400V/800V applications [1] - The company offers a 1700V GWB module product that is compatible with solid-state transformers (SST) [1] - Hongwei Technology plans to launch multiple SiC and GaN device products for use in HVDC power systems, aiming to enhance the supply of efficient power devices in high-voltage, high-power scenarios [1]