Core Insights - SK Hynix has unveiled its next-generation DRAM technology roadmap at the IEEE VLSI Symposium 2025, aiming to lead the company for the next 30 years [1][2] - The CTO emphasized the limitations of traditional technology platforms and the need for innovation in structure, materials, and components to overcome performance and capacity bottlenecks [1][2] Group 1: Next-Generation DRAM Technology - The 4F² VG platform minimizes DRAM cell area, achieving high density, speed, and low power consumption compared to traditional DRAM, which has a cell area of 6F [2] - The VG structure features a vertical gate, enhancing integration compared to the traditional horizontal gate structure [2] - 3D DRAM, which stacks memory cells vertically, is also a core direction for next-generation DRAM technology, with plans to overcome cost challenges through innovation [2] Group 2: Future Development and Collaboration - The CTO highlighted the importance of providing a mid- to long-term innovation roadmap for young engineers involved in future DRAM development [3] - SK Hynix aims to collaborate with the industry to realize the future of DRAM technology [3] - The company is also upgrading key materials and components to secure new growth momentum for the continuous evolution of DRAM technology over the next 30 years [2]