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移动HBM,一场炒作骗局
半导体行业观察· 2025-09-06 03:23
Core Viewpoint - The article discusses the emergence of Mobile HBM (High Bandwidth Memory) technology for mobile devices, highlighting the confusion surrounding its definition and potential applications in flagship smartphones by 2027 [1][4]. Summary by Sections HBM Characteristics - HBM utilizes 3D TSV stacking and ultra-wide I/O buses, making it suitable for high-performance processors like GPUs and TPUs [2][3]. - HBM modules can achieve bandwidths of up to 1024GB/s, with HBM3 and HBM3E offering speeds of 7-8Gbps/Pin and 10Gbps/Pin respectively [3]. Misunderstanding of Mobile HBM - The term "Mobile HBM" originated from a report by ETnews, which speculated on its use in the iPhone 20 anniversary model, leading to widespread misinterpretation [4][6]. - Many media outlets misrepresented "Mobile HBM" as a low-power version of HBM, which is not accurate [6]. LLW DRAM Insights - LLW DRAM, introduced by Samsung, is a low-power DRAM aimed at terminal AI applications, achieving a bandwidth of 128GB/s with a power consumption of only 1.2pJ/bit [6]. - The Vision Pro AR/VR headset utilizes a different packaging method that achieves high bandwidth without employing HBM's TSV stacking [6]. Clarification on Packaging Technologies - VFO and VCS are new packaging technologies that are small and thin but fundamentally different from HBM, lacking the official designation of "Mobile HBM" [7]. - The term "Mobile HBM" appears to be a coined term by ETnews, not recognized by industry standards or manufacturers [7].