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云南锗业(002428.SZ):子公司的化合物半导体产品为砷化镓晶片、磷化铟晶片
Ge Long Hui A P P· 2025-11-24 00:53
Core Viewpoint - Yunnan Zhenye (002428.SZ) has announced that its subsidiary produces compound semiconductor products, specifically Gallium Arsenide (GaAs) chips and Indium Phosphide (InP) chips, which are essential for various high-tech applications [1] Group 1: Product Applications - Indium Phosphide chips are primarily used in the production of lasers and detector chips within optical modules, with downstream applications in 5G communication, data centers, and wearable devices [1] - Gallium Arsenide chips are utilized in RF device products, laser devices, and sensors, commonly found in high-brightness light-emitting diode (HBLED) products, with downstream applications in smartphones, computers, communication base stations, autonomous driving, next-generation displays (Mini LED, Micro LED), industrial lasers, and facial recognition [1]
英诺激光:公司始终聚焦消费电子、半导体、新能源、新一代显示、生物医学五大核心领域
Core Viewpoint - The company, Innolux Laser, focuses on five core areas: consumer electronics, semiconductors, new energy, next-generation displays, and biomedicine, aiming to deepen its layout in high-growth sectors through technological innovation and market expansion [1] Group 1 - The company emphasizes its commitment to high-growth sectors [1] - The company is enhancing its core competitiveness through research and development [1] - The company is expanding its market channels [1]
云南锗业:公司子公司的化合物半导体产品为砷化镓晶片、磷化铟晶片
Core Viewpoint - Yunnan Zheye's subsidiary produces compound semiconductor products, specifically Gallium Arsenide (GaAs) chips and Indium Phosphide (InP) chips, which are essential for various high-tech applications [1] Group 1: Product Applications - Indium Phosphide chips are primarily used in the production of lasers and detector chips within optical modules, with downstream applications in 5G communication, data centers, and wearable devices [1] - Gallium Arsenide chips are utilized in radio frequency devices, lasers, sensors, and high-brightness light-emitting diode (HBLED) products, with downstream applications in smartphones, computers, communication base stations, autonomous driving, next-generation displays (MiniLED, MicroLED), industrial lasers, and facial recognition [1]
云南锗业:子公司的化合物半导体产品为砷化镓晶片、磷化铟晶片
Zheng Quan Ri Bao· 2025-09-03 10:15
Core Viewpoint - Yunnan Zhiye's subsidiary produces compound semiconductor products, specifically Gallium Arsenide (GaAs) chips and Indium Phosphide (InP) chips, which are utilized in various high-tech applications [2] Group 1: Product Applications - Indium Phosphide chips are primarily used in the production of lasers and detector chips for optical modules, with downstream applications in 5G communication, data centers, and wearable devices [2] - Gallium Arsenide chips are mainly used in RF devices, lasers, and sensors, commonly found in high-brightness light-emitting diode (HBLED) products, with downstream applications in smartphones, computers, communication base stations, autonomous driving, next-generation displays (Mini LED, Micro LED), industrial lasers, and facial recognition [2] Group 2: Supply Chain and Confidentiality - The company has supplied its compound semiconductor materials to multiple domestic and international clients, but due to the complexity of the supply chain and confidentiality requirements from downstream enterprises, it cannot disclose specific operational details regarding the use of its products [2]
云南锗业:子公司生产的化合物半导体产品为砷化镓晶片、磷化铟晶片
Zheng Quan Ri Bao Wang· 2025-08-20 12:15
Core Viewpoint - Yunnan Zheye (002428) has confirmed that its subsidiary, Yunnan Xinyao Semiconductor Materials Co., Ltd., produces compound semiconductor products including gallium arsenide (GaAs) wafers and indium phosphide (InP) wafers, which are essential for various high-tech applications [1] Group 1: Product Applications - Indium phosphide wafers are primarily used in the production of laser modules and detector chips, with downstream applications in 5G communication, data centers, and wearable devices [1] - Gallium arsenide wafers are utilized in radio frequency devices, laser devices, and sensors, commonly found in high-brightness light-emitting diode (HBLED) products, with downstream applications in smartphones, computers, communication base stations, autonomous driving, next-generation displays (Mini LED, Micro LED), industrial lasers, and facial recognition technologies [1]