（文章来源：证券日报） 证券日报网讯云南锗业9月3日在互动平台回答投资者提问时表示，公司子公司的化合物半导体产品为砷 化镓晶片、磷化铟晶片。磷化铟晶片主要用于生产光模块中的激光器、探测器芯片，下游主要运用于 5G通信/数据中心、可穿戴设备等；砷化镓晶片主要用于射频器件产品、激光器件、传感器，常用高亮 度发光二极管（HBLED）器件产品，下游可运用于手机及电脑、通信基站、无人驾驶、新一代显示 （Mini LED、Micro LED）、工业激光、面容识别等领域。目前公司化合物半导体材料已向国内外多家 客户供货，但下游企业具体某一型号产品是否使用公司子公司产品，因中间环节较多，或是下游企业的 保密要求，公司无法披露其相关经营细节。 ...

Group 1 - The stock of Yunnan Zhiye (002428.SZ) experienced an abnormal fluctuation, with a cumulative closing price increase of over 20% in two consecutive trading days (August 19 and August 20, 2025) [1] - A domestic research institution announced a technological breakthrough in the 6-inch indium phosphide epitaxial growth process, which has drawn attention to the company's operations [1] - Yunnan Xinyao Semiconductor Materials Co., Ltd., a subsidiary of the company, specializes in the production and sales of indium phosphide and gallium arsenide wafers, which are part of the III-V compound semiconductor substrate market [1] Group 2 - The company is conducting research and development for larger-sized indium phosphide wafers to meet future market demand, but there is significant uncertainty from R&D to mass production [2] - Currently, there are no specific plans for mass production of 6-inch indium phosphide wafers, and any future plans will be disclosed publicly if they arise [2] - The transition to larger wafer sizes is influenced by various factors, including technological breakthroughs, process reliability, cost, capacity, and market policies [1][2]

Core Viewpoint - Yunnan Zheye (002428) has confirmed that its subsidiary, Yunnan Xinyao Semiconductor Materials Co., Ltd., produces compound semiconductor products including gallium arsenide (GaAs) wafers and indium phosphide (InP) wafers, which are essential for various high-tech applications [1] Group 1: Product Applications - Indium phosphide wafers are primarily used in the production of laser modules and detector chips, with downstream applications in 5G communication, data centers, and wearable devices [1] - Gallium arsenide wafers are utilized in radio frequency devices, laser devices, and sensors, commonly found in high-brightness light-emitting diode (HBLED) products, with downstream applications in smartphones, computers, communication base stations, autonomous driving, next-generation displays (Mini LED, Micro LED), industrial lasers, and facial recognition technologies [1]

Core Viewpoint - Yunnan Ge Industry announced that its subsidiary, Yunnan Xinyao Semiconductor Materials Co., Ltd., focuses on the production and sales of indium phosphide (InP) wafers and gallium arsenide (GaAs) wafers, highlighting the need for larger wafer sizes in the semiconductor materials industry [1] Group 1 - The main business of Yunnan Xinyao includes the production and sales of InP and GaAs wafers, which are part of the III-V compound semiconductor substrates [1] - Currently, the actual size specifications for InP wafers used by downstream customers globally range from 2 to 4 inches, with a focus on 2-inch and 3-inch wafers domestically [1] - The transition to larger wafer sizes faces uncertainties due to technological breakthroughs across the entire industry chain, as well as factors such as process reliability, cost, capacity, and market policies [1] Group 2 - Yunnan Xinyao has conducted research and development for larger wafer sizes after achieving mass production of 2-4 inch InP wafers, but there remains significant uncertainty from R&D to large-scale production [1] - Currently, there are no specific plans for the mass production of 6-inch InP wafers, and any future plans will be considered under controllable market and technical risks, with public disclosure required if such plans arise [1]