Core Insights - The article discusses the transition of 2D semiconductors from a long-term development prospect to a core technology in the semiconductor industry, particularly as the industry moves beyond silicon technology in the mid-2030s [1][4]. Group 1: 2D Semiconductor Technology - 2D semiconductors are gaining attention as they maintain electrical properties even at atomic thickness, making them suitable for future semiconductor applications [1][8]. - Major semiconductor companies and research institutions, including Samsung, TSMC, and Intel, are incorporating 2D semiconductor transistors into their technology roadmaps [1][4]. - The commercialization of 2D semiconductors faces challenges, particularly in gate stack integration technology, which is crucial for device performance and stability [1][4]. Group 2: Gate Stack Engineering - The research team from Seoul National University has developed a comprehensive roadmap for "gate stack engineering," a core technology for 2D transistors [2][4]. - The study categorizes gate stack integration methods into five types: van der Waals dielectrics, vdW-oxidized dielectrics, quasi-vdW dielectrics, vdW-seeded dielectrics, and non-vdW-seeded dielectrics, each evaluated based on various performance metrics [3][4]. - The potential of ferroelectric materials in gate stack technology is highlighted, enabling ultra-low power logic and non-volatile memory applications [4][30]. Group 3: Performance Metrics and Challenges - Key performance indicators for gate stack engineering include subthreshold swing (SS), on-current (I_on), leakage current density (J_leak), threshold voltage (V_T), and power supply voltage (V_dd) [12][22]. - The International Roadmap for Devices and Systems (IRDS) sets ambitious targets for these metrics, such as achieving an equivalent oxide thickness (EOT) below 0.5 nm and a leakage current density below 0.01 A cm^-2 by 2031 [12][24]. - The article emphasizes the need for continuous development in interface engineering and material selection to meet these performance goals and ensure CMOS compatibility [12][29]. Group 4: Future Directions - The integration of ferroelectric materials into gate stacks is seen as a promising direction for developing advanced electronic technologies, including AI semiconductors and ultra-low power mobile chips [4][30]. - The research indicates that overcoming the challenges of high-quality gate stack integration is crucial for the commercialization of 2D transistors, with plans for collaboration between academia and industry to advance device-level integration [4][30].

Core Viewpoint - The article discusses the transition of two-dimensional (2D) semiconductors from a long-term development prospect to a core technology in the semiconductor industry, driven by the limitations of current silicon-based technologies and the need for advanced gate stack engineering for commercialization [1][5]. Group 1: Two-Dimensional Semiconductors - Two-dimensional semiconductors are gaining attention as channel materials that can maintain electrical properties even at atomic thickness, making them a promising alternative to silicon [1][8]. - Leading semiconductor companies and research institutions, including Samsung, TSMC, and Intel, have incorporated 2D semiconductor transistors into their technology roadmaps for the post-silicon era [1][5]. - The commercialization of 2D semiconductors faces significant challenges, particularly in gate stack integration technology, which is crucial for device performance and stability [1][5]. Group 2: Gate Stack Engineering - The research team from Seoul National University has developed a comprehensive roadmap for gate stack engineering, which is essential for the next generation of semiconductor devices [2][4]. - The study categorizes gate stack integration methods into five types: van der Waals (vdW) dielectrics, vdW-oxidized dielectrics, quasi-vdW dielectrics, vdW-seeded dielectrics, and non-vdW-seeded dielectrics, each evaluated based on various performance metrics [3][4]. - The potential application of ferroelectric materials in gate stack technology is highlighted, which could lead to ultra-low power logic, non-volatile memory, and memory computing [3][4]. Group 3: Performance Metrics and Challenges - Key performance indicators for gate stack engineering include subthreshold swing (SS), on-state current density, power supply voltage, and threshold voltage (VT), which are influenced by the composition and quality of the gate stack [6][12]. - The International Roadmap for Devices and Systems (IRDS) emphasizes the need for 2D semiconductors to meet specific performance targets, such as reducing equivalent oxide thickness (EOT) to below 0.5 nm by 2031 [12][29]. - Achieving low interface trap density (Dit) is critical for enhancing gate stack performance and controlling short-channel effects, which are essential for the scalability of 2D transistors [12][13][28]. Group 4: Integration Strategies - Various integration strategies for gate stacks are explored, focusing on minimizing Dit and leakage current while optimizing EOT [14][19]. - The article discusses the challenges of integrating high-k dielectrics with 2D semiconductors due to their surface chemical inertness and the need for tailored deposition methods [14][19]. - The potential of hybrid gate stack structures, which combine vdW and non-vdW dielectrics, is presented as a promising solution for achieving CMOS compatibility and reliability [20][21]. Group 5: Future Directions - The development of ferroelectric embedded gate stacks in 2D transistors is seen as a promising avenue for integrating logic and memory functions into single devices, enhancing performance and reducing power consumption [30][31]. - The article emphasizes the importance of optimizing materials and processes for gate stack integration to meet the demands of advanced CMOS technology [22][23]. - Continuous advancements in interface engineering and the development of specialized materials for 2D semiconductors are crucial for unlocking their full potential in next-generation electronic applications [22][30].