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突破EUV封锁 二维芯片 五年量产1nm国产芯
Xin Lang Cai Jing· 2026-01-07 12:23
当全球晶圆厂扎堆冲刺2nm量产,国内却因EUV光刻机卡脖子难以突破5nm以下工艺,上海一家复旦系 企业抛出全新解决方案——二维芯片路线,无需EUV即可在五年内实现1nm全国产自主可控。这真能让 中国芯实现真正的弯道超车吗? 从实验室论文到量产线落地,校企结合的模式起到了关键作用。国内硬科技领域的很多突破,都离不开 这种"科研+产业"的深度绑定,比如寒武纪脱胎于中科院计算所,正是这种模式让实验室成果快速转化 为产品。 从"减法雕琢"到"加法生长":制造逻辑的本质革命 传统硅基芯片的光刻工艺,本质是"减法制造"——用光刻机在硅晶圆上反复刻蚀、雕琢,一步步挖出晶 体管的结构,过程复杂且对设备精度要求极高。 而二维半导体则完全换了思路,采用"加法制造":让特定材料的原子在基底上自发有序生长,直接形成 近乎平面的二维晶体管结构,无需高精度光刻的反复刻蚀。 这种模式带来的效率提升是颠覆性的:相比传统光刻流程,二维半导体制造环节可缩减80%,省去了离 子注入、外延生长等多个复杂步骤,甚至用普通DUV光刻机就能支撑高端芯片制造。 更关键的是,二维芯片在漏电、发热控制上的表现远超传统硅基芯片,这对当下功耗飙升的AI芯片、 旗舰 ...
原集微首条二维半导体工程化示范工艺线成功点亮 复旦科技成果转化开启产业化新篇章
Guan Cha Zhe Wang· 2026-01-07 11:56
1月6日,为深入贯彻国家创新驱动发展战略,加快发展新质生产力,原集微首条二维半导体工程化示范 工艺线点亮仪式在上海浦东川沙成功举行。本次活动由浦东新区川沙新镇人民政府、原集微科技(上 海)有限公司联合主办,复旦大学应用技术发展中心、浦东创投、复旦科创、上海农商银行和杭州银行 股份有限公司上海分行提供支持。 活动汇聚了来自政府机构、高校科研院所、产业链主企业、投资机构、金融机构等逾百位代表,共同见 证这一标志着我国在前沿半导体领域取得突破性进展的重要时刻。 科学创新是知识创造的源头活水,产业创新则致力于将知识转化为驱动发展的社会财富,科技成果转化 应用在科技创新和产业创新深度融合过程中起着重要桥梁作用。原集微由复旦大学集成芯片与系统全国 重点实验室、复旦大学微电子学院研究员及博士生导师包文中于2025年2月创办,系国内首家聚焦于超 越摩尔与非硅基异质集成技术的二维半导体企业,依托团队在复旦大学十余年的深厚科研积淀及学校鼎 力支持,达成超千万元技术成果转化,成为科技创新与产业创新协同赋能的典型范式。 上海市科委副主任翟金国表示,上海将二维半导体作为未来产业培育的重要方向开展系统部署。围绕二 维半导体材料、制造工艺 ...
突破“后摩尔”极限:国内首条二维半导体工程化示范线在沪“点亮”
Xin Hua Cai Jing· 2026-01-07 03:31
新华财经上海1月6日电(记者杜康)6日,原集微科技(上海)有限公司(以下简称"原集微")国内首 条二维半导体工程化示范工艺线在上海浦东川沙"点亮",标志着我国在超越摩尔定律、探索非硅基异质 集成技术领域迈出了从实验室到产业化的关键一步。 在半导体行业进入2纳米及以下先进制程的"后摩尔时代",硅基材料的物理极限成为制约算力进一步跃 升的瓶颈。二维半导体凭借原子级厚度、超高载流子迁移率等独特物理特性,被认为是下一代集成电路 的革命性材料,在高频通信、柔性电子、量子计算及端侧智能等领域拥有重要应用价值。 原集微的成长轨迹是科技创新与产业创新深度融合的典型案例。该公司由复旦大学包文中研究员于2025 年2月创办,依托复旦大学十余年的科研积淀,完成了超千万元的技术成果转化交易。 复旦大学集成芯片与系统全国重点实验室、微电子学院研究员及博士生导师,原集微创始人包文中介 绍,该产线定位为二维半导体工程化示范线,旨在通过引入工业界主流半导体工艺设备,实现二维半导 体材料生产的工程化落地,缩短科研成果到产业化应用的周期。在建设规划方面,产线预计将于2026年 6月正式实现"通线",届时,产线将完成所有工艺设备的联动调试与工艺优 ...
赛微电子:公司积极关注二维半导体领域的技术科研及产业动态
Zheng Quan Ri Bao· 2025-12-16 12:12
(文章来源:证券日报) 证券日报网讯 12月16日,赛微电子在互动平台回答投资者提问时表示,公司积极关注二维半导体领域 的技术科研及产业动态。 ...
二维晶体管路线图
半导体芯闻· 2025-10-23 09:58
Core Insights - The article discusses the transition of 2D semiconductors from a long-term development prospect to a core technology in the semiconductor industry, particularly as the industry moves beyond silicon technology in the mid-2030s [1][4]. Group 1: 2D Semiconductor Technology - 2D semiconductors are gaining attention as they maintain electrical properties even at atomic thickness, making them suitable for future semiconductor applications [1][8]. - Major semiconductor companies and research institutions, including Samsung, TSMC, and Intel, are incorporating 2D semiconductor transistors into their technology roadmaps [1][4]. - The commercialization of 2D semiconductors faces challenges, particularly in gate stack integration technology, which is crucial for device performance and stability [1][4]. Group 2: Gate Stack Engineering - The research team from Seoul National University has developed a comprehensive roadmap for "gate stack engineering," a core technology for 2D transistors [2][4]. - The study categorizes gate stack integration methods into five types: van der Waals dielectrics, vdW-oxidized dielectrics, quasi-vdW dielectrics, vdW-seeded dielectrics, and non-vdW-seeded dielectrics, each evaluated based on various performance metrics [3][4]. - The potential of ferroelectric materials in gate stack technology is highlighted, enabling ultra-low power logic and non-volatile memory applications [4][30]. Group 3: Performance Metrics and Challenges - Key performance indicators for gate stack engineering include subthreshold swing (SS), on-current (I_on), leakage current density (J_leak), threshold voltage (V_T), and power supply voltage (V_dd) [12][22]. - The International Roadmap for Devices and Systems (IRDS) sets ambitious targets for these metrics, such as achieving an equivalent oxide thickness (EOT) below 0.5 nm and a leakage current density below 0.01 A cm^-2 by 2031 [12][24]. - The article emphasizes the need for continuous development in interface engineering and material selection to meet these performance goals and ensure CMOS compatibility [12][29]. Group 4: Future Directions - The integration of ferroelectric materials into gate stacks is seen as a promising direction for developing advanced electronic technologies, including AI semiconductors and ultra-low power mobile chips [4][30]. - The research indicates that overcoming the challenges of high-quality gate stack integration is crucial for the commercialization of 2D transistors, with plans for collaboration between academia and industry to advance device-level integration [4][30].
二维晶体管路线图
半导体行业观察· 2025-10-20 01:47
Core Viewpoint - The article discusses the transition of two-dimensional (2D) semiconductors from a long-term development prospect to a core technology in the semiconductor industry, driven by the limitations of current silicon-based technologies and the need for advanced gate stack engineering for commercialization [1][5]. Group 1: Two-Dimensional Semiconductors - Two-dimensional semiconductors are gaining attention as channel materials that can maintain electrical properties even at atomic thickness, making them a promising alternative to silicon [1][8]. - Leading semiconductor companies and research institutions, including Samsung, TSMC, and Intel, have incorporated 2D semiconductor transistors into their technology roadmaps for the post-silicon era [1][5]. - The commercialization of 2D semiconductors faces significant challenges, particularly in gate stack integration technology, which is crucial for device performance and stability [1][5]. Group 2: Gate Stack Engineering - The research team from Seoul National University has developed a comprehensive roadmap for gate stack engineering, which is essential for the next generation of semiconductor devices [2][4]. - The study categorizes gate stack integration methods into five types: van der Waals (vdW) dielectrics, vdW-oxidized dielectrics, quasi-vdW dielectrics, vdW-seeded dielectrics, and non-vdW-seeded dielectrics, each evaluated based on various performance metrics [3][4]. - The potential application of ferroelectric materials in gate stack technology is highlighted, which could lead to ultra-low power logic, non-volatile memory, and memory computing [3][4]. Group 3: Performance Metrics and Challenges - Key performance indicators for gate stack engineering include subthreshold swing (SS), on-state current density, power supply voltage, and threshold voltage (VT), which are influenced by the composition and quality of the gate stack [6][12]. - The International Roadmap for Devices and Systems (IRDS) emphasizes the need for 2D semiconductors to meet specific performance targets, such as reducing equivalent oxide thickness (EOT) to below 0.5 nm by 2031 [12][29]. - Achieving low interface trap density (Dit) is critical for enhancing gate stack performance and controlling short-channel effects, which are essential for the scalability of 2D transistors [12][13][28]. Group 4: Integration Strategies - Various integration strategies for gate stacks are explored, focusing on minimizing Dit and leakage current while optimizing EOT [14][19]. - The article discusses the challenges of integrating high-k dielectrics with 2D semiconductors due to their surface chemical inertness and the need for tailored deposition methods [14][19]. - The potential of hybrid gate stack structures, which combine vdW and non-vdW dielectrics, is presented as a promising solution for achieving CMOS compatibility and reliability [20][21]. Group 5: Future Directions - The development of ferroelectric embedded gate stacks in 2D transistors is seen as a promising avenue for integrating logic and memory functions into single devices, enhancing performance and reducing power consumption [30][31]. - The article emphasizes the importance of optimizing materials and processes for gate stack integration to meet the demands of advanced CMOS technology [22][23]. - Continuous advancements in interface engineering and the development of specialized materials for 2D semiconductors are crucial for unlocking their full potential in next-generation electronic applications [22][30].
华尔街见闻早餐FM-Radio | 2025年10月10日
Hua Er Jie Jian Wen· 2025-10-09 23:22
Market Overview - US macroeconomic data remains sparse, raising concerns about bubble risks and increasing profit-taking demand, leading to a decline in US stocks [2] - The tech giants in the US showed mixed performance, with Meta rising over 2% and Nvidia hitting new highs, while Apple fell over 1.5% [2] - The US dollar strengthened by 0.72%, surpassing 99 and reaching a two-month high, while Bitcoin and Ethereum experienced declines of approximately 3.3% and 3.7%, respectively [2] - Asian markets saw the Shanghai Composite Index open positively, breaking the 3900-point mark for the first time in 10 years, with significant gains in gold and copper [2] Key News - The Chinese Ministry of Commerce announced export controls on rare earths, lithium batteries, and superhard materials, effective November 8 [9] - The US government faces a shutdown as the Senate has repeatedly rejected funding bills, with Trump threatening to cut Democratic projects [9] - The US Treasury Secretary announced a $200 billion support package for Argentina, leading to a rise in the Argentine peso [11] - Microsoft predicts that data center supply shortages will persist until mid-2026, exceeding previous expectations [12] Company Developments - Nvidia, Oracle, and AMD are just the beginning, with OpenAI planning more significant transactions in the coming months [5] - Intel showcased its new 18A process AI PC chip, which is set to begin mass production in the US [12] - TSMC reported Q3 revenue exceeding expectations, with a year-on-year growth of 30% [13] - HSBC plans to privatize Hang Seng Bank for $13.6 billion, offering a premium of over 30% [14] Industry Insights - The semiconductor industry is expected to see a comprehensive recovery by 2025, driven by AI demand and significant investments from tech giants [25] - The rare earth export control measures by China are likely to strengthen its global pricing power and competitive advantage in the industry [27] - The human-shaped robot market is poised for growth, with significant advancements and production plans from leading companies [26] - The development of two-dimensional semiconductors is seen as a key breakthrough in overcoming the physical limits of traditional silicon-based technologies [29]
晚报 | 10月10日主题前瞻
Xuan Gu Bao· 2025-10-09 14:24
Superhard Materials - The Ministry of Commerce and the General Administration of Customs announced export control measures on superhard materials, rare earth equipment, and other related items, effective from November 8 [1] - The production and sales ratio of superhard materials in China remains high, indicating a balanced supply-demand relationship, with diamond wire and micro-powder products nearing 100% [1] - The market for CVD diamond films is expected to exceed 5 billion yuan by 2030, indicating significant growth potential [1] Semiconductor Industry - TSMC reported a September sales figure of 330.98 billion NTD, a year-on-year increase of 31.4%, with Q3 revenue reaching 989.9 billion NTD, surpassing analyst expectations [2] - The demand for high-end chips driven by AI investments from global tech giants is providing strong support for TSMC's performance [2] - The semiconductor industry is anticipated to experience a full recovery by 2025, with improved profitability for companies [2] Humanoid Robots - Cloud Deep Technology launched the DR02 humanoid robot, featuring IP66 protection for outdoor operations [3] - The industry is on the verge of mass production, with major companies like Tesla and domestic leaders receiving significant orders [3] - The humanoid robot sector is expected to enter mass production by 2026, driven by advancements from leading companies [3] Rare Earths - Export controls on certain rare earth items will be implemented starting November 8, 2025, expanding previous measures [4] - China holds a dominant position in the global rare earth market, with 68.57% of production and 39.21% of reserves [4] - The new export control measures are expected to strengthen China's competitive advantage in the entire rare earth supply chain [4] Physical AI - XPeng Motors announced significant breakthroughs in physical AI, enhancing its ability to simulate the physical world [5] - The development of a large-scale physical AI model is seen as crucial for advancing autonomous driving and robotics [5] - The commercialization of physical AI is accelerating, with practical applications emerging in various sectors [5] Two-Dimensional Semiconductors - Fudan University's research team developed the world's first two-dimensional-silicon hybrid architecture chip, which could revolutionize traditional storage architectures [6] - This technology is expected to provide new pathways for chip development in the post-Moore's Law era [6] - The two-dimensional semiconductor technology is recognized as a key solution to global semiconductor challenges [6] Hydrogen Energy - A research team from Tokyo University of Science developed a high-performance solid electrolyte capable of reversible hydrogen absorption at 90 degrees Celsius [7] - The magnesium-hydrogen battery constructed from this electrolyte shows promising hydrogen storage capacity, nearing theoretical limits [7] - This advancement is expected to play a significant role in renewable energy storage and fuel cell vehicles [7]
10.9犀牛财经晚报:中芯国际、佰维存储两融折算率调为零 国产AI眼镜退货率超三成
Xi Niu Cai Jing· 2025-10-09 10:25
Group 1: Fund Distribution - The total distribution amount of public funds in 2025 has reached 183.197 billion yuan, the highest for the same period since 2022, and only 4 billion yuan short of the 2021 record [1] - Four major Hu-Shen 300 ETFs lead the market in distribution amounts, with Huatai-PB Hu-Shen 300 ETF distributing 8.394 billion yuan [1] - Most funds with significant distributions this year are passive index funds and bond funds, with only a few large active equity funds making the list [1] Group 2: Stock Market Regulations - The margin trading and securities lending rates for SMIC and Baiwei Storage have been adjusted to zero due to their static P/E ratios exceeding 300 [1] - This regulation aims to enhance risk control and ensure the stable operation of margin trading and securities lending businesses [1] Group 3: Server Market Growth - The accelerated server market in China reached a scale of 16 billion USD in the first half of 2025, more than doubling compared to the same period in 2024 [2] - The market is projected to exceed 140 billion USD by 2029 [2] Group 4: AI Glasses Return Rates - The return rate for AI glasses on platforms like JD and Tmall is approximately 30%, while on Douyin it reaches 40-50%, primarily due to concerns over functionality [3] Group 5: Corporate Developments - ASML appointed Marco Pieters as the new Chief Technology Officer, effective immediately [3] - Ping An Group has made internal adjustments, with Su Dong moving to Ping An Good Doctor and He Ying taking over as General Manager of Ping An Property & Casualty [6] Group 6: Financial Performance - Longyuan Power reported a 41.88% year-on-year decrease in power generation for September, with total generation at 27.42 billion kWh [8] - Guangzhou Port expects to complete a container throughput of 2.051 million TEUs in September, a 0.8% year-on-year decrease [9] - Ringxu Electronics reported a September revenue of 5.96 billion yuan, a 0.1% year-on-year increase [11] - Shandong Steel anticipates a net profit of approximately 140 million yuan for the first three quarters of 2025, a significant increase compared to the previous year [14] - Guangdong Mingzhu expects a net profit increase of 858.45% to 1071.44% for the first three quarters of 2025 [15] Group 7: Market Trends - The Shanghai Composite Index rose 1.32%, breaking the 3900-point mark, with nearly 100 stocks hitting the daily limit [16] - The market saw strong performances in sectors like non-ferrous metals and nuclear power, while film and tourism sectors faced declines [16]
全球首颗!我国成功研发全新架构闪存芯片
财联社· 2025-10-09 06:11
Core Viewpoint - Fudan University has achieved a significant breakthrough in the field of two-dimensional (2D) semiconductor technology by developing the world's first 2D-silicon-based hybrid architecture flash chip, addressing key engineering challenges in new 2D information devices [1] Group 1 - The research team at Fudan University published their findings in Nature, highlighting the successful creation of a full-featured 2D flash chip enabled by system integration [1] - This development comes in response to the global challenge posed by the approaching physical limits of Moore's Law, with 2D semiconductors recognized as a critical solution [1] - Current international research on 2D semiconductors is still in its early stages, with large-scale applications yet to be realized [1]