Core Viewpoint - Fudan University has achieved a significant breakthrough in the development of a full-featured 2D silicon-based hybrid flash chip, addressing key engineering challenges in new 2D information devices [1][3][4] Group 1: Research Progress - The research team has made multiple advancements in 2D flash memory devices since 2018, culminating in the "Dawn" prototype that achieved a speed of 400 picoseconds for non-volatile storage, marking it as the fastest semiconductor charge storage technology to date [2][3] - The current research is focused on overcoming the engineering challenges to transition 2D flash memory from prototype to industrial application, with a goal to integrate it into existing CMOS technology [4][5] Group 2: Industrialization Challenges - The transition from laboratory to factory (LAB to FAB) is a significant concern, as the team aims to accelerate the industrialization process of 2D electronic devices, particularly in the memory sector, which is seen as the most likely candidate for early commercialization [4][7] - The team is developing an "Atomic Device to Chip" (ATOM2CHIP) integration framework to facilitate the integration of atomic-level devices into functional chips, which is a milestone for the engineering application of 2D materials [7][8] Group 3: Future Plans - The research team plans to establish an experimental base and collaborate with relevant institutions to lead engineering projects, aiming to achieve a chip capacity of one million (Mb) within the next 3 to 5 years [8][9] - Once the capacity reaches the million level, the team intends to hand over the project to the industry for large-scale production of commercial products [8]

Core Insights - Fudan University has achieved a breakthrough in two-dimensional (2D) semiconductor flash memory, presenting the world's first 2D-silicon-based hybrid architecture chip, addressing key engineering challenges in new 2D information devices [1][3][9] Research Progress - The research on 2D semiconductors is still in its early stages internationally, with significant advancements made since 2018, including the development of a prototype device capable of 400 picoseconds ultra-fast non-volatile storage, marking the fastest semiconductor charge storage technology to date [2][3] - The team has been working on integrating 2D ultra-fast flash memory into existing CMOS technology to accelerate the commercialization process, aiming to overcome the "LAB to FAB" challenge [5][6] Industrialization Strategy - The research team plans to establish an experimental base and collaborate with relevant institutions to lead engineering projects, targeting a chip capacity of one million (Mb) within the next 3 to 5 years [9][10] - The integration of 2D flash memory into the mature CMOS manufacturing process is expected to significantly shorten the time required for commercialization, potentially transforming the semiconductor industry [6][8] Technological Innovation - The team has developed an "Atomic Device to Chip" (ATOM2CHIP) system integration framework, allowing for the modular integration of 2D storage circuits with mature CMOS circuits, facilitating the transition from laboratory results to functional chips [8] - The innovative integration process is seen as a milestone for the engineering of 2D applications, paving the way for new high-speed information technology [8]