Core Viewpoint - The article discusses the potential of Nano Imprint Lithography (NIL) technology as a competitor to Extreme Ultraviolet (EUV) lithography, highlighting its theoretical advantages but also significant practical challenges that hinder its adoption in advanced semiconductor manufacturing [2][30]. Group 1: NIL Technology Overview - NIL technology uses patterned "stamps" to imprint designs onto resin, aiming to transfer patterns from masks to wafers, similar to ASML's lithography technology [3]. - The most promising NIL technology was invented in 1996 and commercialized in 2001 as Molecular Imprints Inc. (MII), later acquired by Canon in 2014 [5]. - Canon positions NIL as the next-generation patterning technology following DUV, claiming it to be the only technology that can surpass KrF scanners [8]. Group 2: NIL Process and Mechanism - Canon's NIL process, termed "J-FIL," involves applying photoresist, imprinting with a mask, and curing with ultraviolet light, optimizing the coating process to enhance throughput [9][11]. - The imprinting process is designed to minimize defects and improve efficiency, with a total cycle time of approximately 1.3 seconds per wafer [28]. Group 3: Comparison with EUV - Theoretically, NIL can achieve higher resolution than EUV, with significant cost and power consumption advantages, as NIL's operational power is claimed to be reduced by 90% compared to EUV [30]. - Despite these advantages, the industry is cautious about adopting NIL due to unresolved practical challenges [30]. Group 4: Key Challenges - The lifespan of NIL masks is a critical issue, with current estimates suggesting they can only be used for about 50 wafers, compared to over 100,000 for traditional lithography masks [32]. - Overlay accuracy and the ability to align printed patterns with existing layers on the wafer present significant technical hurdles [34]. - Customer feedback indicates that NIL technology is not yet ready for advanced chip manufacturing, with concerns about resolution limits and mask roughness affecting performance [37].