此外，DNP计划在2025年12月17日至19日于东京国际展览中心举办的SEMICON Japan 2025上展出这款10nm线宽NIL纳米压印光刻掩膜版。公司认为， 通过在专业展会集中展示产品与技术路线，可加深与全球半导体制造企业及设备厂商的交流，推动纳米压印工艺在先进逻辑制程中的应用探索。后续 该技术在量产良率、生产节拍以及与既有工艺整合方面的表现，将成为市场持续关注的重点。 （校对/秋贤） （文/罗叶馨梅）大日本印刷株式会社（DNP）近日宣布，成功开发出电路线宽为10nm的NIL纳米压印光刻掩膜版，可用于相当于1.4nm级逻辑半导体 的电路图形化。公司表示，该产品面向智能手机、数据中心、NAND闪存等应用场景中尖端逻辑芯片的微型化需求，目前已启动客户评估工作，计划 于2027年实现量产。DNP同时提出，力争在2030财年将纳米压印相关业务销售额提升至40亿日元。 DNP指出，随着终端设备性能持续提升，市场对更先进制程逻辑半导体的需求不断加大，推动基于极紫外（EUV）光刻的生产技术演进。但EUV在生 产线建设和曝光过程中需要巨额资本支出及高能耗，制造成本与环境负担成为行业关注焦点。自2003年起，DNP持 ...

Group 1 - The article discusses the ongoing debate about Nano Imprint Lithography (NIL) potentially disrupting Extreme Ultraviolet (EUV) lithography, highlighting that while NIL has interesting applications, it currently does not match the capabilities of EUV [1][27] - NIL technology was invented in 1996 and commercialized in 2001, with Canon acquiring Molecular Imprints Inc. in 2014 to position NIL as a successor to DUV lithography [4][6] - Canon's NIL technology, known as J-FIL, involves a unique process of applying photoresist and imprinting patterns, which theoretically offers advantages in speed and cost compared to EUV [7][12][25] Group 2 - The NIL process involves creating a master template, which is then used to produce working templates for wafer patterning, with significant challenges related to the durability and defect rates of these templates [14][29] - Key challenges for NIL include the lifespan of masks, overlay accuracy, mask pattern roughness, and customer feedback indicating that NIL is not yet ready for advanced chip manufacturing [29][35] - Despite theoretical advantages in resolution and cost, practical issues such as mask durability and defect rates hinder NIL's competitiveness against EUV technology [27][29][35]

Core Viewpoint - The article discusses the potential of Nano Imprint Lithography (NIL) technology as a competitor to Extreme Ultraviolet (EUV) lithography, highlighting its theoretical advantages but also significant practical challenges that hinder its adoption in advanced semiconductor manufacturing [2][30]. Group 1: NIL Technology Overview - NIL technology uses patterned "stamps" to imprint designs onto resin, aiming to transfer patterns from masks to wafers, similar to ASML's lithography technology [3]. - The most promising NIL technology was invented in 1996 and commercialized in 2001 as Molecular Imprints Inc. (MII), later acquired by Canon in 2014 [5]. - Canon positions NIL as the next-generation patterning technology following DUV, claiming it to be the only technology that can surpass KrF scanners [8]. Group 2: NIL Process and Mechanism - Canon's NIL process, termed "J-FIL," involves applying photoresist, imprinting with a mask, and curing with ultraviolet light, optimizing the coating process to enhance throughput [9][11]. - The imprinting process is designed to minimize defects and improve efficiency, with a total cycle time of approximately 1.3 seconds per wafer [28]. Group 3: Comparison with EUV - Theoretically, NIL can achieve higher resolution than EUV, with significant cost and power consumption advantages, as NIL's operational power is claimed to be reduced by 90% compared to EUV [30]. - Despite these advantages, the industry is cautious about adopting NIL due to unresolved practical challenges [30]. Group 4: Key Challenges - The lifespan of NIL masks is a critical issue, with current estimates suggesting they can only be used for about 50 wafers, compared to over 100,000 for traditional lithography masks [32]. - Overlay accuracy and the ability to align printed patterns with existing layers on the wafer present significant technical hurdles [34]. - Customer feedback indicates that NIL technology is not yet ready for advanced chip manufacturing, with concerns about resolution limits and mask roughness affecting performance [37].