Core Viewpoint - Tianyu Semiconductor (02658) has seen a stock price increase of over 6%, currently trading at 54.65 HKD with a transaction volume of 13.8852 million HKD, following the announcement of a strategic cooperation agreement with Qinghe Crystal [1] Group 1: Strategic Cooperation - The agreement between Tianyu Semiconductor and Qinghe Crystal aims to leverage Tianyu's advantages in silicon carbide (SiC) materials and Qinghe's expertise in customized bonding equipment to jointly develop bonding materials [1] - The collaboration will focus on the development and technological iteration of bonding materials, including SiC, silicon on insulator (SOI), piezoelectric substrates on insulator (POI), and large-size (12 inches and above) SiC composite heat dissipation substrates [1] - The board believes that both parties will utilize their competitive advantages to establish a mutually beneficial partnership, enhancing the development of advanced bonding material solutions and optimizing production processes [1] Group 2: Market Position and Technical Capability - The cooperation is expected to enhance the group's technical capabilities in large-size composite substrates, ensuring equipment stability and further consolidating the group's market position [1]

Core Viewpoint - Tianyu Semiconductor (02658) has seen a stock increase of over 6%, currently trading at 54.65 HKD, with a transaction volume of 13.8852 million HKD, following the announcement of a strategic cooperation agreement with Qinghe Crystal [1] Group 1: Strategic Cooperation - The agreement between Tianyu Semiconductor and Qinghe Crystal aims to leverage Tianyu's advantages in silicon carbide (SiC) materials and Qinghe's expertise in bonding equipment customization and optimization [1] - The collaboration will focus on the development of bonding materials, including bonding SiC, silicon-on-insulator (SOI), piezoelectric substrates on insulators (POI), and large-size (12 inches and above) SiC composite heat dissipation substrates [1] - The board believes that both parties will utilize their competitive advantages to establish a mutually beneficial partnership, enhancing the development of advanced bonding material solutions and optimizing production processes [1] Group 2: Expected Outcomes - The cooperation is expected to improve the group's technical capabilities in large-size composite substrates, ensure equipment stability, and further solidify the group's market position [1]

Core Viewpoint - Tianyu Semiconductor (02658) has entered into a strategic cooperation agreement with Qinghe Crystal Semiconductor Technology (Group) Co., Ltd. to leverage their respective strengths in silicon carbide (SiC) materials and bonding equipment for the development of advanced bonding materials and technology iterations [1] Group 1: Strategic Cooperation - The agreement aims to establish a mutually beneficial partnership by combining Tianyu's industry strength in SiC epitaxial wafers with Qinghe's expertise in bonding integration technology and equipment [1] - The collaboration will focus on the development of bonding materials, including bonded SiC, silicon-on-insulator (SOI), piezoelectric substrates on insulators (POI), and large-size (12 inches and above) SiC composite heat dissipation substrates [1] Group 2: Expected Outcomes - The partnership is expected to enhance the group's technical capabilities in large-size composite substrates, ensure equipment stability, and further solidify the group's market position [1]

Core Viewpoint - Tianyu Semiconductor (02658) has entered into a strategic cooperation agreement with Qinghe Crystal Semiconductor Technology (Group) Co., Ltd. to leverage their respective strengths in silicon carbide (SiC) materials and bonding equipment optimization for the development of advanced bonding materials [1] Group 1: Strategic Cooperation - The agreement aims to establish a mutually beneficial partnership by combining Tianyu's industry strength in SiC epitaxial wafers with Qinghe's expertise in bonding integration technology and equipment [1] - The collaboration will focus on the development and technological iteration of bonding materials, including bonding SiC, silicon-on-insulator (SOI), piezoelectric substrates on insulators (POI), and large-size (12 inches and above) SiC composite heat dissipation substrates [1] Group 2: Expected Outcomes - The partnership is expected to enhance the group's technical capabilities in large-size composite substrates, ensure equipment stability, and further solidify the group's market position [1]

Core Viewpoint - The strategic cooperation agreement between Tianyu Semiconductor and Qinghe Crystal Semiconductor Technology aims to leverage their respective strengths in silicon carbide (SiC) materials and bonding equipment to develop advanced bonding materials and optimize production processes [1][2][3] Group 1: Cooperation Details - The cooperation will focus on process development for bonding materials including SiC, SOI, POI, and large-size (12-inch and above) SiC composite heat dissipation substrates [1] - Qinghe Crystal will provide equipment customization, optimization, and process support for various bonding substrates, including single-crystal and multi-crystal SiC [2] - The agreement includes provisions for equipment improvement and technical support, with both parties committed to enhancing manufacturing capabilities and addressing technical issues collaboratively [2] Group 2: Intellectual Property and Collaboration - Each party retains independent ownership of any intellectual property developed during the collaboration [3] - During the cooperation period, the company will prioritize collaboration with Qinghe Crystal for complete line projects and equipment procurement, unless Qinghe Crystal's equipment fails to meet specified technical or production requirements [3] - The board believes that this partnership will create a mutually beneficial relationship, enhancing the company's capabilities in large-size composite substrates and solidifying its market position [3]