Core Insights - The demand for low-power memory close to computing logic is driven by artificial intelligence workloads, leading to new memory designs and material explorations across various applications [1][11] - DRAM remains the preferred technology for most applications despite challenges in miniaturization and increasing demand from AI data centers, resulting in a memory shortage in the industry [1][11] Group 1: DRAM and Memory Technologies - The miniaturization of DRAM faces challenges, with designers looking to vertical structures to increase density while avoiding high lithography costs [1] - Low-leakage transistors are being explored to reduce refresh power in large storage arrays, with materials like IGZO showing promise due to their acceptable carrier mobility and low leakage [1][2] - Research from Samsung indicates that zinc migration during IGZO annealing can lead to uncoordinated indium sites, affecting performance, but optimizing electrode materials can mitigate interface migration and oxygen loss [2] Group 2: Innovations in Oxide Semiconductors - Researchers from Changxin Storage Technology successfully created functional IGZO devices by optimizing deposition processes and reducing hydrogen content, achieving a drive current of 60.9 μA/μm [3] - Kioxia demonstrated a 3D DRAM oxide channel replacement process that helps reduce thermal degradation, achieving over 30 μA per cell in prototype storage units [5] - A hybrid design using oxide semiconductors and silicon in a 256×256 array improved density by 3.6 times and reduced energy consumption by 15% compared to high-density SRAM [6] Group 3: Advanced Memory Architectures - A fully self-aligned design by Georgia Tech improved performance by 10 times and reduced energy-delay-area product by 75% to 80% compared to traditional SRAM cells [8] - Researchers are exploring the integration of transistor-based memory into backend processes, balancing speed and maturity of silicon technology with simpler but lower-performing alternatives [8] - Non-volatile memory designs using ferroelectric layers and IGZO as channel materials have shown promising durability and performance, with a wide storage window of 1.6 V [9]