国芯网[原:中国半导体论坛] 振兴国产半导体产业！ 不拘中国、 放眼世界 ！ 关注 世界半导体论坛 ↓ ↓ ↓ 2月2日消息，据韩媒报道，三星电子和 SK 海力士的"最尖端" NAND 投资终于要全面启动了。 据了解，业内正在讨论的转换投资规模约为月产 4-5 万片晶圆。按照设备导入节奏，V9 NAND 预计从明年起正式进入量产加速阶段。 半导体业内人士说，三星原本打算在第 1 季度启动西安 X2 的 V9 转换，但日程推迟到第 2 季度。同时，平泽第 1 园区（P1）也在准备相关投资，因此明 年 V9 产品的生产占比可能会明显提高。 SK 海力士方面同样在推进先进 NAND 扩产。SK 海力士计划在今年第 2 季度启动 321 层第 9 代 NAND 的转换投资，目标是在清州 M15 确保月产约 3 万 片晶圆的 V9 产能。与目前约 2 万片晶圆的水平相比，这次扩产力度相当大。 业内人士认为，三星与 SK 海力士都在为先进 NAND 需求持续增长做准备。过去两家公司的设备投资几乎全部集中在 DRAM，但现在 NAND 市场也正在 快速出现供应紧张迹象。 ***************END******** ...

Core Viewpoint - The article highlights a significant increase in NAND and DRAM contract prices expected in Q4 2025, driven by AI infrastructure demands and supply constraints [2][3]. Group 1: Price Trends - NAND and DRAM contract prices are projected to rise by 15-20% in Q4 2025, contrasting with typical seasonal price declines [2]. - SanDisk has increased NAND prices by approximately 10% in September, indicating tightening supply conditions [2]. - The demand for high-density 3D NAND products is surging, with cloud service providers actively procuring these products due to their faster read speeds and larger capacities [2][3]. Group 2: Supply Chain Dynamics - Samsung's next-generation V9 NAND is reportedly close to being sold out, as cloud customers are securing capacity early due to its advantages [3]. - TrendForce has noted that traditional DRAM types are under significant pressure, and if cloud orders continue to rise, typical winter discounts on NVMe drives may be less than expected [3]. Group 3: Market Performance - Phison Electronics reported record revenue of NT$59.34 billion in August, a 23% year-over-year increase, attributed to non-consumer demand and closer collaboration with NAND manufacturers [4]. - The article emphasizes that AI is reshaping the cloud storage landscape, leading to stronger pricing power for flash memory manufacturers compared to previous years [4].

Core Viewpoint - Samsung Electronics is facing challenges in the commercialization of its ninth-generation (V9) high-capacity NAND products, originally planned for last year, due to performance issues that require design and process adjustments [2][3]. Group 1: Product Development Challenges - The V9 NAND utilizes a 280-layer structure and began initial mass production in April last year with a 1Tb capacity based on TLC (Triple-Level Cell) technology, which stores 3 bits of data per cell [3]. - Samsung announced the start of V9 QLC (Quad-Level Cell) NAND mass production in September last year, which can store 4 bits of data per cell, offering advantages for high-capacity storage [3]. - However, early products encountered performance declines due to design issues, prompting Samsung to optimize the design and processes, with expectations to complete these improvements by the first half of next year [3]. Group 2: Market Position and Competition - The demand for high-capacity NAND products is rapidly increasing, particularly driven by the growth of the AI industry, which requires handling large volumes of data [4]. - Despite maintaining a leading position in the overall NAND market, Samsung is at a disadvantage in the QLC NAND segment, with an expected market share of only about 9% next year, compared to competitors like SK Hynix at 36%, Kioxia and SanDisk at 29%, and Micron at 17% [5]. - The importance of QLC NAND is growing as global tech giants invest and replace traditional NAND, indicating that Samsung must ensure stable mass production and expansion of its advanced products to benefit from this trend [5].