如果您希望可以时常见面，欢迎标星收藏哦~ 来源；内容 综合自英特尔 。 关于我过去在 Walden International 和 Cadence Design Systems 的任职经历，流传着许多错误信 息。我想明确指出：在 40 多年的行业从业经历中，我与世界各地以及我们多元化的生态系统建立 了良好的关系，并且始终遵循最高的法律和道德标准。我的声誉建立在信任之上——言出必行，并 以正确的方式行事。我领导英特尔的方式也是如此。 亲爱的团队， 我知道今天有很多新闻，我想花点时间直接和大家谈谈。 首先，我想说：美国是我40多年来的家。我热爱这个国家，并深深感激它给予我的机遇。我也热 爱这家公司。在这个关键时刻领导英特尔不仅仅是一份工作，更是一种荣幸。这个行业给予了我太 多，我们公司也扮演着如此重要的角色，能够与大家携手重振英特尔的实力，创造未来的创新，是 我职业生涯的荣幸。 英特尔的成功对美国科技和制造业的领先地位、国家安全和经济实力至关重要。这正是我们在全球 开展业务的动力。这也是我加入这个团队的动机，也是我每天推动我们共同推进重要工作的动力， 以构建更美好的未来。 我们正在与政府沟通，解决已提出的问题，并 ...

Core Viewpoint - Samsung's semiconductor foundry business is facing significant challenges, particularly in the advanced 3nm process, where its yield is only 50%, compared to TSMC's 90% yield, leading to the loss of major clients to TSMC [1][4]. Group 1: Challenges in Semiconductor Foundry - Samsung's 3nm yield is significantly lagging behind TSMC, which poses a risk of losing key customers [1]. - Major clients such as Google, Qualcomm, and AMD have shifted their production to TSMC due to Samsung's low yield [1]. - China's SMIC is making progress in 5nm and 7nm processes, adding competitive pressure on Samsung's foundry business [1]. Group 2: Strategic Moves - Samsung has hired former TSMC executive Margaret Han to lead its North American foundry business, aiming to enhance customer engagement and competitiveness [2][4]. - The appointment of Margaret Han is seen as a strategic move to rebuild trust with North American clients and attract new orders from major tech companies like NVIDIA, AMD, Tesla, and Amazon [4]. - Samsung is investing $17 billion in a new advanced foundry facility in Taylor, Texas, to strengthen its position in the U.S. market [4].

Core Viewpoint - Intel's latest 18A process technology, featuring advanced capabilities and significant performance improvements, positions it as a strong competitor to TSMC's 2nm process, with potential applications in upcoming products by 2026 [2][3]. Group 1: Intel 18A Process Technology - Intel 18A process technology operates at 1.1V, achieving a 25% speed increase and a 36% reduction in power consumption compared to standard Arm core architecture chips [2]. - The area efficiency of Intel 18A is superior to that of Intel 3, indicating enhanced design potential and higher density capabilities [2]. - The technology utilizes RibbonFET gate-all-around (GAA) transistors for precise current control and introduces the industry's first PowerVia backside power delivery technology, improving power transmission stability [2]. Group 2: Market Implications - If yield rates are satisfactory, Intel 18A is expected to compete effectively with TSMC's 2nm process technology [3]. - The initial applications of Intel 18A are projected to be in Panther Lake SoC and Xeon Clearwater Forest CPU, with terminal products anticipated to debut as early as 2026 [3].

最新资料显示，Intel 18A提供了高性能（HP）和高密度（HD）库，具有全功能的技术设计功能和增强的设计易用性。 在PPA（性能、功耗、面积）比较中，Intel 18A在标准Arm核心架构的芯片上，1.1V电压下实现了25%的速度提升和36%的功耗降低。 此外，Intel 18A的面积利用率比Intel 3更高，这意味着该制程可以实现更好的面积效率和更高密度设计的潜力。 英特尔官网此前公布的资料显示，Intel 18A采用了RibbonFET环绕栅极晶体管（GAA）技术，可实现电流的精确控制，同时还率先采用 了业界首创的PowerVia背面供电技术。 英特尔还展示了电压下降图，描绘了高性能条件下节点的稳定性，由于Intel 18A的PowerVia供电技术，该制程能够提供更稳定的电力传 输。 比较显示，通过背面供电技术，英特尔实现了更紧密的单元封装，并提高了面积效率，这主要是因为相比正面布线释放了更多空间。 国芯网[原:中国半导体论坛] 振兴国产半导体产业！ 不拘中国、 放眼世界 ！ 关注 世界半导体论坛 ↓ ↓ ↓ 4月21日消息，英特尔在2025年VLSI研讨会上披露了更多关于其最新的Intel 18 ...