Core Viewpoint - Applied Materials has developed an advanced copper interconnect process for logic chips at 2nm and beyond, addressing challenges in performance and reliability due to shrinking interconnect sizes [2][23]. Group 1: Advanced Logic Chip Development - The new copper interconnect process utilizes Low k dielectric materials and RuCo liner technology, demonstrating feasibility through AI accelerator test chips based on the latest 2nm transistor technology [2][23]. - The complexity of interconnects in advanced chips, which can contain billions of transistors, has led to increased resistance and other issues affecting chip performance and reliability [2][23]. - The need for process innovation to reduce resistance and capacitance without compromising reliability and yield is emphasized by industry experts [2][23]. Group 2: Semiconductor Industry Background - The semiconductor industry produces various types of chips, including processors, GPUs, and memory chips, which are essential for numerous electronic systems [3]. - Chips are manufactured in large factories known as fabs, where complex electronic circuits are integrated into silicon wafers [3]. Group 3: Evolution of Transistors and Interconnects - The history of semiconductor technology dates back to the invention of the transistor in 1947, leading to the development of integrated circuits in the late 1950s [7][10]. - The transition from aluminum to copper interconnects in the 1990s significantly improved chip performance due to copper's lower resistivity [11][12]. Group 4: Challenges and Innovations in Interconnect Technology - As technology advances to 20nm and below, copper interconnects face challenges such as RC delay, which affects chip speed [17][18]. - The introduction of FinFET transistors and the shift to cobalt liners have helped mitigate some of these challenges, allowing for the development of chips at 3nm nodes [18][20]. - The industry is moving towards GAA (Gate-All-Around) transistors for 2nm nodes, which promise better performance but come with increased manufacturing complexity and costs [20][23]. Group 5: Applied Materials' Copper Interconnect Process - The copper interconnect process developed by Applied Materials involves several steps, including dielectric deposition, metal filling, annealing, and chemical mechanical polishing (CMP) [25][29]. - The use of RuCo liners and TaN barriers in the process allows for reduced resistance and improved performance, with a reported performance enhancement of 2.5% in a 2nm test chip [24][25]. - The integration of back-side power delivery networks (BSPDN) in advanced nodes aims to address power distribution challenges while maintaining signal integrity [32][35].