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拓荆科技:在手订单饱满,将持续深耕薄膜沉积设备和三维集成设备领域
Core Viewpoint - The company,拓荆科技, is focused on high-end semiconductor equipment, particularly in the development and industrial application of thin film deposition equipment, which has seen significant demand in the semiconductor manufacturing sector [1][4]. Group 1: Company Performance and Product Development - The company held a performance briefing on December 4, 2025, discussing its operational results and financial metrics for Q3 2025 [1]. - The company has established industrial bases in Shenyang and Shanghai, with a production capacity exceeding 700 sets per year, and is expanding its capacity with a new factory in Shenyang [1]. - The thin film deposition product series, including PECVD, ALD, SACVD, HDPCVD, and Flowable CVD, has achieved industrial application in the storage chip manufacturing sector, with a full order book indicating strong future demand [1][4]. Group 2: Technological Advancements and Market Trends - The company is continuously expanding its thin film deposition product series and increasing production scale, with new equipment platforms and advanced processes entering mass production [2]. - The semiconductor industry is transitioning into a post-Moore era, with rapid technological iterations and the emergence of new structures and materials, driving demand for advanced semiconductor equipment [3]. - The rise in storage prices reflects strong demand in the storage chip market, which may lead to increased production capacity among manufacturers, further driving the need for advanced thin film equipment [4]. Group 3: Future Outlook - The company plans to maintain its core competitiveness through high-intensity R&D investments, focusing on thin film deposition and three-dimensional integration equipment, while expanding into new products and processes required for advanced manufacturing [3]. - The ongoing complexity in storage chip processes and structures is expected to significantly boost the demand for thin film equipment, as manufacturers seek to enhance performance with advanced materials [4].
芯片,怎么连?(上)
半导体行业观察· 2025-08-11 01:11
公众号记得加星标⭐️,第一时间看推送不会错过。 我们生活在信息时代,但如果信息无法到达其预期目的地,那么它就毫无用处。而信息从这里到 达那里的方式就是通过互连。 从广义上讲,互连有两个层次。在一个宏大的规模上,我们有连接各大洲并为有访问权限的人带 来互联网的网络。这种互连依赖于路由器和交换机等系统,而这些系统又依赖于半导体。这些芯 片也有它们自己的内部互连,包括通过极细的铜线实现的片上互连,以及通过引线框架或基板或 中介层实现的封装内互连。 本文介绍的是第二种互连。文章展示了不同的互连结构,例如片上线路、通孔、总线和网络,以 及它们的构建方式。在本章节中,我们先了解一下什么是片上互联。 互联的组成元素 一个典型的硅芯片最多可以包含五种不同的互连元素: 线: 线是最常见的互连形式,用于在芯片上短距离或长距离传输信号。它们由金属或多种金属组 合而成。布线的灵活性取决于制造工艺的先进程度。多个层可以承载线路,并由介电材料隔开。 先进制程节点可拥有多达15层线路。 通孔(Vias): 通孔连接一个金属层上的线路到另一个层上的线路,同样由金属或金属组合制 成。 局部互连(Local interconnect): 这是一 ...