Core Insights - Navitas Semiconductor has announced a strategic partnership with Powerchip Semiconductor Manufacturing Corporation (PSMC) to produce and develop 200mm silicon-based gallium nitride (GaN) technology after TSMC plans to terminate its GaN foundry business by 2027 [1][2] - The collaboration aims to meet the growing demand for GaN products in 48V infrastructure, including large-scale AI data centers and electric vehicles, with initial devices expected to be certified by Q4 2025 [1][2] Group 1 - Navitas will utilize Powerchip's 200mm wafer production capabilities at its 8B fab in Taiwan, which has been operational since 2019, to support various GaN mass production processes [1] - Powerchip's advanced 180nm CMOS technology will enhance performance, power efficiency, integration, and cost-effectiveness of Navitas's GaN product lineup, which will range from 100V to 650V [1][2] - The first 100V series is expected to enter production in H1 2026, while the 650V devices will transition from TSMC to Powerchip within the next 12-24 months [1] Group 2 - Navitas has made several announcements in the AI data center, electric vehicle, and solar markets, including collaborations with NVIDIA and Enphase, showcasing its GaN and SiC technology [2] - The CEO of Navitas expressed excitement about the partnership with Powerchip, emphasizing the commitment to continuous innovation in product performance and cost efficiency [2] - Powerchip's general manager highlighted the long-standing collaboration with Navitas in GaN-on-Si technology and the nearing completion of product certification, paving the way for mass production [2]

在合作伙伴台积电计划于2027年终止 氮化镓 代工业务以后， Navitas Semiconductor（纳微半导体） 今天宣布，将与力晶半导体制造股份有限公司 (PSMC 或 Powerchip ) 建立战略合作伙伴关系，开始 生产并继续开发一流的 200 毫米硅基氮化镓技术。 纳微的 GaN IC 产品组合预计将使用力晶位于台湾竹南科学园区的8B晶圆厂的200毫米晶圆。该晶圆厂 自2019年投入运营，支持从Micro-LED到 射频GaN 器件等各种GaN大批量生产工艺。 Powerchip 的技术能力包括改进的 180nm CMOS 工艺，提供更小、更先进的几何尺寸，从而提升性能、 功率效率、集成度和成本。Navitas 宽带隙技术平台高级副总裁 Sid Sundaresan 博士表示："在 180nm 工 艺节点上进行 200mm 硅基氮化镓生产，使我们能够继续创新，开发更高功率密度、更快速度和更高效 的器件，同时降低成本、扩大规模并提高产量。" 力晶预计将生产纳微（Navitas）额定电压为 100V 至 650V 的 GaN 产品组合，以满足 48V 基础设施 （包括超大规模 AI 数据中心和电动 ...