Group 1 - SK Hynix will showcase its next-generation AI storage solutions at the 2026 CES, themed "Creating a Sustainable Future with Innovative AI Technology" [1] - The company will unveil its 48GB 16-layer HBM4 product, an upgrade from the 36GB 12-layer HBM4, which has a leading data transfer speed of 11.7Gbps [1] - SK Hynix will also present the 36GB 12-layer HBM3E product, expected to be a core product in the HBM market in the first half of the year, along with AI server GPU modules [1] Group 2 - The new generation of general memory products includes the LPDDR6 memory, which significantly enhances data processing speed and energy efficiency for AI applications [2] - In the NAND flash sector, SK Hynix will launch a 321-layer, 2Tb capacity QLC product optimized for large-capacity enterprise SSDs, driven by the growing demand from AI data centers [2] - An "AI System Demonstration Zone" will be set up for visitors to observe how the currently developed AI memory solutions integrate into a cohesive AI ecosystem [2]

如果您希望可以时常见面，欢迎标星收藏哦~ 来 源 ：内容来自 tom'shardware 。 周一，SK海力士宣布已开始批量生产其 321层、2Tb 3D QLC NAND 存储设备。该设备有望用于 数据中心，制造容量高达 244TB 甚至更高的超大容量 SSD，同时也能为个人电脑生产价格相对低 廉的高容量硬盘，足以与市面上一些顶级固态硬盘相抗衡。 SK海力士的 321层 2Tb (256GB) 3D QLC NAND 存储设备属于该公司的 V9Q 系列产品。其输 入/输出接口速度为 3200 MT/s，仅比最先进的 3D TLC NAND IC（如该公司即将推出的 V9T 321L 3D TLC NAND）的 3600 MT/s 略慢。此外，新的 2Tb V9Q IC 具备六个平面（据推测， 上一代 3D QLC NAND 设备为四个），这能实现更多的并行操作，显著提高了多重读取速度。 制造商声称，与 2023 年发布的旧款 V7Q 设备相比，其 2Tb V9Q 设备的写入性能提高了 56%， 读取性能提高了 18%。性能的提升归功于更高的输入/输出速度和强化的内部架构。此外，该公司 还声称，新的 2Tb ...