FROM TECHNOLOGIES TO MARKET Status of the Power Electronics Industry 2025 Market and Technology Report www.yolegroup.com | © Yole Group 2025 YINTR25514 | GLOSSARY | $M/$B | US dollar million/billion | | | --- | --- | --- | | 4WD | Four-Wheel Drive | | | BESS | Battery Energy Storage System | | | BEV | Battery Electric Vehicle | | | BMIC | Battery Management Integrated Circuit | | | BMS | Battery Management System | | | CD | Critical Dimension | | | CZ | Czochralski | | | CT | Central Tomograph | | | DC | Di ...

Core Viewpoint - The report highlights the financial performance and operational developments of StarPower Semiconductor Ltd. for the first half of 2025, showcasing growth in revenue and strategic advancements in the semiconductor industry, particularly in power semiconductor devices. Company Overview and Financial Indicators - StarPower Semiconductor Ltd. specializes in the design, research, production, and sales of power semiconductor chips and modules, primarily IGBT and SiC [2][3] - The company reported a revenue of approximately 1.94 billion RMB, a 26.25% increase compared to the same period last year [6][7] - The net profit attributable to shareholders was approximately 275.45 million RMB, reflecting a slight increase of 0.26% year-on-year [6][7] - The total assets of the company reached approximately 10.39 billion RMB, a 7.73% increase from the previous year [6][7] Business and Industry Analysis - The main business focus is on power semiconductor devices, including IGBT, SiC MOSFET, and GaN HEMT, which are essential for energy-efficient and intelligent applications [3][4] - The global power semiconductor market is projected to grow from 50.3 billion USD in 2023 to 59.6 billion USD by 2027, with China being a significant market [5][6] - The company has established a strong presence in various sectors, including new energy vehicles, industrial control, and AI server power supplies, enhancing its market share [8][10] Operational Highlights - The company has expanded its product offerings and market reach, particularly in the new energy sector, with significant revenue growth in related industries [7][8] - StarPower has adopted a "Fabless + IDM" hybrid business model, allowing for efficient chip design and production while minimizing investment risks [14][15] - The company has made substantial investments in R&D, with a focus on high-end and customized products to meet market demands [12][14] Competitive Advantages - StarPower Semiconductor has developed a competitive edge through its technological expertise, rapid response to customer needs, and a strong focus on R&D [11][12] - The company has established strategic partnerships with major Tier 1 suppliers, enhancing its position in the global market [13][14] - The talent pool within the company, comprising experienced professionals in semiconductor technology, supports its ongoing innovation and development efforts [14]

Core Viewpoint - The article emphasizes the significance of Gallium Nitride (GaN) as a strategic material in modern technology, highlighting its potential applications and advantages over Silicon Carbide (SiC) in various sectors [1][10][25]. Group 1: Material Comparison - GaN and SiC are classified as compound semiconductors, composed of multiple elements, and their properties significantly impact the performance of electronic devices [2]. - SiC MOSFETs excel in high power applications, while GaN HEMTs are superior in high-frequency applications [3][4]. - The substrate for GaN can be silicon or sapphire, while SiC and silicon devices use their respective materials as substrates [6][7]. Group 2: Application Markets - In the automotive sector, GaN is still in the exploratory phase for high-power applications, with SiC currently dominating due to its superior short-circuit protection capabilities [10][11]. - GaN power devices have gained traction in consumer electronics, particularly in fast charging solutions, with significant market penetration since 2019 [12]. - The AI server power market demands high power density, where GaN's high-frequency switching and low-loss characteristics are advantageous [18]. - In humanoid robotics, GaN FETs enable faster switching speeds, enhancing the performance of joint motors [21][23]. - GaN shows promise in integrated solar-storage-charging systems, improving inverter size and dynamic performance [24]. Group 3: Technical Challenges - GaN faces challenges related to lattice and thermal mismatch when grown on silicon substrates, impacting the quality and reliability of devices [25]. - The cost structure of GaN devices is influenced by substrate costs, wafer manufacturing, depreciation, yield, and packaging [25]. Group 4: Industry Events - The IPF 2025 conference serves as a significant platform for discussions on GaN and SiC technologies, featuring prominent industry leaders and experts [34][35].