公众号记得加星标⭐️，第一时间看推送不会错过。 近 日 ， 华 为 和 山 东 大 学 的 作 者 发 布 了 一 篇 题 为 《 1200 V Fully-Vertical GaN-on-Si Power MOSFET》的我论文。在文中，他们介绍一种 1200 V 全垂直 GaN-on-Si 沟槽 MOSFET，采用氟注 入终端（FIT-MOS）。FIT （fluorine implanted termination）区由于带有固定的负电荷而表现为高 电阻，可自然地将离散器件隔离，取代了传统的台面刻蚀终端（MET），消除了台面边缘的电场拥 挤效应。 结 果 显 示 ， FIT-MOS 的 击 穿 电 压 从 MET-MOS 的 567 V 提 升 至 1277 V 。 此 外 ， 所 制 备 的 FIT- MOS 具有 3.3 V 的阈值电压 (Vth)、约 10^7 的开关比 (ON/OFF ratio)，以及 5.6 mΩ·cm² 的比导 通电阻 (Ron,sp)。这些结果表明，GaN-on-Si 垂直晶体管在 kV 级应用中具有巨大的性价比潜力。 简介 氮化镓（GaN）和碳化硅（SiC）等宽禁带半导体 ...

由宽禁带半导体国家工程研究中心主办，InSemi Research、协创微半导体联合承办，碳化硅芯观察协办，功率半导体行业联盟、高端芯片产业创新发展联盟、无锡市 半导体行业协会、无锡市集成电路学会协办的 "功率器件制造测试与应用大会(第三届IPF 2025)" 将于 2025年8月21-22日在中国无锡 盛大启幕。 大会最新议程，重磅公布 | 大会议程 | | | | --- | --- | --- | | FORUM AGENDA | | | | . | | | | 0 0 | 产业领袖峰会 | | | INDUSTRY LEADERSHIP SUMMIT | | Dav1 / 8.21 星期四上午 | | 09:00-09:10 | 大会致辞 | | | 09:10-09:30 | 宽禁带半导体功率器件研究进展 | | | 那跃 - 中国科学院 院士 西安电子科技大学微电子学院 教授 | | | | 09:30-10:00 | 功率半导体材料与器件多场跨尺度建模仿真与数字李生 | | | 刘胜 - 中国科学院 院士 武汉大学 教授 | | | | 10:00-10:30 | 碳化硅缺陷对器件性能影响及碳化 ...

Core Viewpoint - Tianyue Advanced (02631) is set to launch an IPO from August 11 to August 14, 2025, aiming to globally offer 47.7457 million H-shares, with a maximum price of HKD 42.80 per share, and is expected to start trading on August 19, 2025 [1][2] Group 1: Company Overview - The company specializes in the semiconductor materials industry, focusing on the research and industrialization of silicon carbide substrates, and is ranked among the top three global manufacturers in this sector with a market share of 16.7% based on 2024 sales revenue [1] - The company has shown strong revenue growth, with revenue increasing from RMB 417 million in 2022 to RMB 1.251 billion in 2023, representing a 199.9% increase, and further rising by 41.4% to RMB 1.768 billion in 2024 [2] Group 2: Financial Performance - The company reported losses of RMB 176 million in 2022 and RMB 45.7 million in 2023, but turned a profit of RMB 179 million in 2024 [2] - For the three months ending March 31, 2024, the profit was RMB 46.1 million, which decreased to RMB 8.5 million for the same period in 2025 [2] Group 3: IPO Details and Use of Proceeds - The cornerstone investors have agreed to subscribe for shares worth HKD 740 million, which translates to approximately 17.2952 million shares at the maximum offer price [2] - The estimated net proceeds from the global offering are approximately HKD 1.938 billion, with 70% allocated for expanding production capacity, 20% for enhancing R&D capabilities, and 10% for working capital and general corporate purposes [3] - If the over-allotment option is fully exercised, the company expects to receive an additional net amount of HKD 296 million, which will be allocated proportionally to the aforementioned uses [3]

Core Viewpoint - Tianyue Advanced (02631) is set to launch an IPO from August 11 to August 14, 2025, aiming to issue 47.75 million H-shares, with a maximum offer price of HKD 42.80 per share, and is positioned as a leading player in the silicon carbide substrate manufacturing industry [1][2]. Group 1: Company Overview - The company specializes in the semiconductor materials industry, particularly in the research and industrialization of silicon carbide substrates, and ranks among the top three global manufacturers with a market share of 16.7% based on sales revenue in 2024 [1]. - The company has shown strong revenue growth, with revenue increasing from RMB 417 million in 2022 to RMB 1.251 billion in 2023, representing a 199.9% increase, and further rising by 41.4% to RMB 1.768 billion in 2024 [2]. Group 2: Financial Performance - The company reported losses of RMB 176 million in 2022 and RMB 45.7 million in 2023, but turned a profit of RMB 179 million in 2024, with profits of RMB 46.1 million and RMB 8.5 million for the three months ending March 31 in 2024 and 2025, respectively [2]. - The estimated net proceeds from the global offering, assuming the maximum offer price, are approximately HKD 1.938 billion, which will be allocated primarily for capacity expansion, R&D enhancement, and general corporate purposes [3]. Group 3: Use of Proceeds - Approximately 70% (HKD 1.357 billion) of the net proceeds is expected to be used for expanding the company's capacity for 8-inch and larger silicon carbide substrates [3]. - About 20% (HKD 388 million) is planned for strengthening R&D capabilities to maintain innovation leadership, while 10% (HKD 194 million) will support working capital and other general corporate needs [3].

Core Viewpoint - The article emphasizes the significance of Gallium Nitride (GaN) as a strategic material in modern technology, highlighting its potential applications and advantages over Silicon Carbide (SiC) in various sectors [1][10][25]. Group 1: Material Comparison - GaN and SiC are classified as compound semiconductors, composed of multiple elements, and their properties significantly impact the performance of electronic devices [2]. - SiC MOSFETs excel in high power applications, while GaN HEMTs are superior in high-frequency applications [3][4]. - The substrate for GaN can be silicon or sapphire, while SiC and silicon devices use their respective materials as substrates [6][7]. Group 2: Application Markets - In the automotive sector, GaN is still in the exploratory phase for high-power applications, with SiC currently dominating due to its superior short-circuit protection capabilities [10][11]. - GaN power devices have gained traction in consumer electronics, particularly in fast charging solutions, with significant market penetration since 2019 [12]. - The AI server power market demands high power density, where GaN's high-frequency switching and low-loss characteristics are advantageous [18]. - In humanoid robotics, GaN FETs enable faster switching speeds, enhancing the performance of joint motors [21][23]. - GaN shows promise in integrated solar-storage-charging systems, improving inverter size and dynamic performance [24]. Group 3: Technical Challenges - GaN faces challenges related to lattice and thermal mismatch when grown on silicon substrates, impacting the quality and reliability of devices [25]. - The cost structure of GaN devices is influenced by substrate costs, wafer manufacturing, depreciation, yield, and packaging [25]. Group 4: Industry Events - The IPF 2025 conference serves as a significant platform for discussions on GaN and SiC technologies, featuring prominent industry leaders and experts [34][35].

Core Viewpoint - The global market for β-Gallium Oxide (β-Ga2O3) single crystal wafers is projected to reach $430 million by 2031, with a compound annual growth rate (CAGR) of 27.6% from 2024 to 2030, driven by its superior electrical properties and wide bandgap characteristics [1]. Market Overview - β-Ga2O3 is a wide bandgap semiconductor with a bandgap of approximately 4.9 eV, offering excellent electrical performance, including high breakdown field strength (8 MV/cm) and high ultraviolet transmittance [1]. - The market is dominated by 4-inch wafers, which account for about 54.8% of the market share [6][8]. - The primary application for β-Ga2O3 wafers is in education and research, representing approximately 53.2% of the demand [9]. Key Drivers - The wide bandgap property of β-Ga2O3 allows for high-temperature and high-voltage applications, making it suitable for high-power and high-frequency devices [14]. - The high breakdown field strength of β-Ga2O3 (8-10 MV/cm) surpasses that of traditional materials like silicon and gallium nitride, increasing its demand in high-voltage applications [14]. - Advancements in crystal growth technologies, such as the Czochralski method, support the large-scale production of high-quality β-Ga2O3 wafers [17]. - The decreasing manufacturing costs due to optimized production processes enhance the competitiveness of the industry [18]. Challenges - The difficulty in controlling crystal defects in β-Ga2O3 affects the stability and reliability of devices [19]. - The lack of mature p-type doping technology limits the flexibility in device design [19]. - Existing manufacturing equipment is primarily designed for traditional materials, creating a gap in the supply chain for β-Ga2O3 [21]. Industry Opportunities - The high-power and high-voltage device market presents significant growth potential for β-Ga2O3, especially in power management and electric vehicle drive systems [24]. - The unique properties of β-Ga2O3 make it ideal for ultraviolet light detection and emission applications, catering to environmental monitoring and healthcare needs [25]. - The rise of electric vehicles and smart grids increases the demand for efficient wide bandgap semiconductor devices [26]. - Emerging applications in space technology and military defense create new opportunities for high-performance materials [27]. - Government support and capital investment in wide bandgap semiconductor development provide a favorable environment for industry growth [29]. - The global push for energy transition and efficiency improvements positions β-Ga2O3 as a key material in achieving these goals [30].

Core Viewpoint - Wolfspeed is facing significant financial distress, with a debt of $6.5 billion and cash reserves of only $1.3 billion, leading to speculation about potential bankruptcy [3][9]. Group 1: Wolfspeed's History and Market Position - Wolfspeed, originally part of Cree, was established in 1987 and focused on the commercialization of silicon carbide (SiC) materials in the LED sector. It became a leader in the wide bandgap semiconductor field, achieving a market share of over 60% [4]. - The company specializes in the research and manufacturing of SiC and gallium nitride (GaN) semiconductors, being the only global player with a fully integrated supply chain from substrate to device [4][5]. - Wolfspeed's product range includes discrete devices, power modules, and bare chips, serving markets such as electric vehicles, renewable energy, and industrial applications [4]. Group 2: Market Dynamics and Competition - The global market for compound semiconductors is projected to exceed $23.05 billion by 2024, with a compound annual growth rate (CAGR) of over 10% from 2024 to 2030 [12]. - Chinese manufacturers are rapidly gaining market share, with Wolfspeed's market share expected to drop to approximately 30% by 2024, a decline of over 30% since 2021 [10]. - Domestic companies like Tianyue Advanced and Tiankehua have emerged with competitive pricing, capturing significant market shares of 17.1% and 17.3%, respectively [10]. Group 3: Technological Advancements and Future Trends - The demand for SiC and GaN semiconductors is driven by the growth in electric vehicles, 5G communication, and renewable energy applications, with SiC devices improving electric vehicle range by 10% and increasing solar inverter efficiency to over 99% [17][18]. - The market for GaN is expected to exceed 30 billion yuan by 2025, with domestic companies capturing nearly 40% of the global market share [16]. - The compound semiconductor market is characterized by a structural contradiction, with oversupply in low-end segments and a shortage in high-end applications, prompting a shift towards technological upgrades [21]. Group 4: Investment Trends and Future Outlook - Investment in the compound semiconductor sector has cooled, with capital becoming more cautious due to increased cost pressures and intensified competition [22]. - Despite the current challenges, the long-term outlook remains positive, with significant financing events occurring in the sector, indicating ongoing interest from investors [22][23]. - The industry is expected to transition from chaotic competition to orderly differentiation, with companies that possess technological reserves and integrated supply chains likely to dominate the global market [22].

国芯网[原:中国半导体论坛] 振兴国产半导体产业！ 据悉，破产主要原因是Wolfspeed目前面临巨大的债务压力，其总债务高达65亿美元，其中包括阿 波罗全球管理公司持有的15亿美元优先担保贷款。公司未能就债券重组达成协议，导致其财务状况 进一步恶化。该公司预计2026年的营收为8.5亿美元，低于分析师预期的9.587亿美元 ***************END*************** 不拘中国、 放眼世界 ！ 关注 世界半导体论坛 ↓ ↓ ↓ 5月21日消息，据外媒报道， 全球最大的SiC衬底制造商之一碳化硅功率器件巨头Wolfspeed正准备在未 来数周内申请破产！ Wolfspeed美股盘前暴跌超60%！ Wolfspeed是一家全球领先的碳化硅（SiC）功率器件和宽禁带半导体技术公司，成立于1987年， Wolfspeed最初是Cree公司旗下的第三代化合物半导体业务部门，专注于LED照明和半导体业务。 自2017年起，公司开始战略性转型，逐步剥离LED照明业务，专注于碳化硅（SiC）和氮化镓（GaN） 等宽禁带半导体材料及器件的研发和制造。2021年，Cree正式更名为Wolfspeed，成为 ...

以下文章来源于化合物半导体产业博览会CSE ，作者2025JFSC 化合物半导体产业博览会CSE . 打造全球化合物半导体产业风向标，CSE每年定期举办行业最高规格展会及专业高峰论坛（JFSC）为学 术界及全产业链提供高效的交流和展示服务，积极推动科学进步及化合物半导体产业发展。 作为全球化合物半导体领域旗舰级盛会， 2025九峰山论坛 将于 4月23-25日 在 武汉光谷科技会展中心 点燃创新引擎。 本届论坛除了重磅的主旨报告外，还通过 涵盖 从关键材料到AI赋能的EDA工具链，从光子神经网络到太赫兹通信技 术的 11大平行论坛 ，全方位解码产业技术演进密码。 点击查看 九峰山论坛 11 大平行论坛主题＆ 亮点一览 目前，通过定向邀约与公开征集审核的方式，已有 超100份 高质量重磅报告 确认，首批演讲嘉宾也正式公布如 下。 （九峰山论坛早鸟票价将于 3 月 20 日截止，想参会的观众抓紧购票啦 ~ ） 2024 九峰山论坛现场照片 11大平行论坛核心亮点抢先看 1. 前沿科技盛宴：直击半导体未来脉搏 聚焦神经形态计算、二维材料器件、硅光量子集成、宽禁带半导体大前沿领域，覆盖类脑芯片、第三代半导 体、先进封 ...

Core Viewpoint - Silicon carbide (SiC) is a compound material composed of carbon and silicon, known for its high hardness and excellent physical and chemical properties, making it a key material for cost reduction and efficiency improvement across various industries [2] Group 1: Characteristics and Advantages of Silicon Carbide - SiC materials possess characteristics such as high pressure resistance, high frequency tolerance, high thermal conductivity, high temperature stability, and high refractive index, which are crucial for transforming the semiconductor industry and supplementing silicon-based technologies [2] - Compared to silicon-based semiconductors, wide bandgap semiconductors represented by SiC and gallium nitride (GaN) exhibit significant performance advantages from material to device level, including high frequency, high efficiency, high power, high pressure resistance, and high temperature tolerance [2] Group 2: Market Potential and Applications - SiC materials have vast market application potential in power semiconductor devices, radio frequency semiconductor devices, and emerging application fields, with significant usage in xEV, photovoltaics, energy storage systems, power grids, rail transportation, communication, AI glasses, smartphones, and semiconductor lasers [3] - The global penetration rate of SiC power semiconductor devices in the overall power semiconductor market increased from 1.1% in 2019 to 5.8% in 2023, with expectations to reach 22.6% by 2030 [4] Group 3: Growth Trends and Projections - From 2019 to 2023, the compound annual growth rate (CAGR) of global revenue from SiC power semiconductor devices in the xEV sector reached 66.7%, with a projected CAGR of 36.1% from 2024 to 2030, indicating continued leadership in market growth [4] - The photovoltaic storage, power grid, and rail transportation sectors also show strong growth momentum, with projected CAGRs of 27.2%, 24.5%, and 25.3% respectively during the forecast period [4]