Core Viewpoint - Semiconductor Manufacturing International Corporation (SMIC) has applied for a patent related to a new type of memory and its formation method, indicating ongoing innovation in the semiconductor industry [1]. Group 1: Patent Application - SMIC has filed a patent titled "Memory and Its Formation Method" with publication number CN119922914A, with the application date being October 2023 [1]. - The patent describes a memory structure that includes a substrate, floating gate structure, and selection gate structure, which enhances the efficiency of charge writing into the floating gate [1]. Group 2: Company Overview - SMIC was established in 2000 and is located in Shanghai, primarily engaged in the manufacturing of computers, communications, and other electronic devices [2]. - The company has a registered capital of 244 million USD and has made investments in four enterprises, participated in 120 bidding projects, and holds 5000 patent records [2].

Group 1 - The core viewpoint of the news is that Semiconductor Manufacturing International Corporation (SMIC) has obtained a patent for a "fixture component" that enhances the precision of wafer handling and placement [1][3] Group 2 - SMIC Tianjin was established in 2003, located in Tianjin, with a registered capital of 129 million USD, and has participated in 104 bidding projects and holds 384 patents [2] - SMIC Shanghai was established in 2000, located in Shanghai, with a registered capital of 244 million USD, has invested in 4 companies, participated in 117 bidding projects, and holds 5000 patents [2]

Group 1 - The core viewpoint of the news is that Semiconductor Manufacturing International Corporation (SMIC) has applied for a patent related to semiconductor structures and their formation methods, indicating ongoing innovation in the semiconductor industry [1][3] - The patent application was filed on October 2023, with the publication number CN119815896A, highlighting the company's commitment to advancing semiconductor technology [1] - The patent describes a method that includes providing a substrate with a diode region, which consists of a first area and a second area surrounding it, aimed at improving the reverse breakdown voltage of Schottky diodes while reducing junction capacitance [1] Group 2 - SMIC Beijing was established in 2002, focusing on the manufacturing of computers, communications, and other electronic devices, with a registered capital of 100 million USD [1] - SMIC Beijing has made investments in one company, participated in 51 bidding projects, and holds 5000 patent records along with 226 administrative licenses [1] - SMIC Shanghai, founded in 2000, also specializes in the same sectors with a registered capital of 244 million USD, having invested in four companies and participated in 117 bidding projects, holding 5000 patents and 443 administrative licenses [2]