半导体结构及其形成方法

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中芯国际申请半导体结构及其形成方法专利,降低在第二区的栅极层中产生缝隙、空洞等缺陷的概率
Sou Hu Cai Jing· 2025-08-09 11:36
天眼查资料显示,中芯国际集成电路制造(上海)有限公司,成立于2000年,位于上海市,是一家以从 事计算机、通信和其他电子设备制造业为主的企业。企业注册资本244000万美元。通过天眼查大数据分 析,中芯国际集成电路制造(上海)有限公司共对外投资了4家企业,参与招投标项目127次,财产线索 方面有商标信息150条,专利信息5000条,此外企业还拥有行政许可451个。 来源:金融界 专利摘要显示,一种半导体结构及其形成方法,半导体结构包括:衬底,衬底包括第一区和第二区,第 一区的器件工作电压小于第二区的器件工作电压;鳍部,分立于第一区和第二区的衬底上;隔离层,位 于衬底上且围绕鳍部的部分侧壁,被隔离层暴露的鳍部作为有效鳍部,第一区的有效鳍部高度大于第二 区的有效鳍部高度;第一栅介质层,位于第二区的有效鳍部上;第二栅介质层,位于第一区的有效鳍部 上,第二栅介质层的厚度小于第一栅介质层的厚度;栅极层,横跨有效鳍部且覆盖第一栅介质层和第二 栅介质层,栅极层覆盖有效鳍部的部分顶部和部分侧壁。 金融界2025年8月9日消息,国家知识产权局信息显示,中芯国际集成电路制造(上海)有限公司申请一 项名为"半导体结构及其形成方法" ...
中芯国际申请半导体结构及其形成方法专利,提升半导体结构的制程效率
Sou Hu Cai Jing· 2025-08-02 09:03
Group 1 - Company Name: Semiconductor Manufacturing International Corporation (SMIC) has filed a patent for a semiconductor structure and its formation method, with publication number CN120413548A, applied on January 2024 [1] - The patent describes a method that includes forming a first part with at least a first metal layer, a dielectric layer, and a first interconnect structure, and a second part with a device structure, a second metal layer, and a second interconnect structure [1] - The bonding of the first and second parts allows for overlapping projection areas of the first and second metal layers, ensuring electrical connection between the first and second interconnect structures [1] Group 2 - SMIC Beijing was established in 2002 with a registered capital of 100 million USD, focusing on manufacturing in the computer, communication, and other electronic device sectors [2] - SMIC Shanghai was founded in 2000 with a registered capital of 244 million USD, also engaged in the same manufacturing sectors [2] - SMIC Beijing has participated in 52 bidding projects and holds 5000 patent records, while SMIC Shanghai has been involved in 127 bidding projects and also holds 5000 patent records [2]
中芯国际申请半导体结构及其形成方法专利,提高了光电传感器的集成度
Sou Hu Cai Jing· 2025-08-02 08:16
Group 1 - The core viewpoint of the news is that Semiconductor Manufacturing International Corporation (SMIC) has applied for a patent related to semiconductor structures and their formation methods, which aims to enhance the integration of photodetectors [1] - The patent application was filed for a semiconductor structure that includes a first substrate with multiple discrete photosensitive areas and an isolation trench containing a capacitive structure, which improves the optical isolation between adjacent photosensitive areas [1] - The capacitive structure is designed to reduce the size in the vertical direction relative to the first substrate, thereby increasing the integration level of the photodetector [1] Group 2 - SMIC Beijing was established in 2002 with a registered capital of 100 million USD and has participated in 52 bidding projects, holding 5000 patent records [2] - SMIC Shanghai was founded in 2000 with a registered capital of 244 million USD, involved in 127 bidding projects, and also holds 5000 patent records [2] - Both companies are primarily engaged in the manufacturing of computers, communications, and other electronic devices, with SMIC Shanghai having more administrative licenses (451) compared to SMIC Beijing (226) [2]
中芯国际申请半导体结构及其形成方法专利,极大提升半导体结构的良率
Sou Hu Cai Jing· 2025-07-02 09:34
Group 1 - Company Name: Semiconductor Manufacturing International Corporation (SMIC) has filed a patent for a semiconductor structure and its formation method, with publication number CN120237113A, applied on December 2023 [1] - The patent describes a semiconductor structure that includes a substrate with interconnect through holes, first and second electrode layers, a dielectric layer, and a conductive layer, which enhances processing efficiency and yield [1] - The structure aims to reduce the thickness of the isolation layer within the interconnect through holes and prevent cracking of the conductive layer on the substrate's second surface, significantly improving the semiconductor structure's yield [1] Group 2 - SMIC Beijing was established in 2002, with a registered capital of $100 million, and has participated in 52 bidding projects and holds 5000 patent records [2] - SMIC Beijing has 226 administrative licenses and has made one external investment [2] - SMIC Shanghai was founded in 2000, with a registered capital of $244 million, and has participated in 127 bidding projects, holding 5000 patent records and 442 administrative licenses [2]
中芯国际申请半导体结构及其形成方法专利,在增加ESD结构的鲁棒性的同时,具有双向ESD保护特性
Sou Hu Cai Jing· 2025-05-24 06:42
Core Viewpoint - Semiconductor companies, specifically SMIC, are actively pursuing innovation through patent applications, indicating a focus on enhancing semiconductor structures and methods, which may strengthen their market position in the industry [1][2]. Group 1: Patent Application - SMIC has applied for a patent titled "Semiconductor Structure and Its Formation Method," with publication number CN120035224A, filed on November 2023 [1]. - The patent describes a semiconductor structure that includes a substrate with an insulating layer and an active region, featuring gate structures that enhance ESD (Electrostatic Discharge) robustness and provide bidirectional ESD protection [1]. Group 2: Company Overview - SMIC Beijing was established in 2002, focusing on manufacturing for computers, communications, and other electronic devices, with a registered capital of 100 million USD [2]. - SMIC Shanghai was founded in 2000, also in the same industry, with a registered capital of 244 million USD [2]. - SMIC Beijing has participated in 51 bidding projects and holds 5000 patent records, while SMIC Shanghai has engaged in 127 bidding projects and also possesses 5000 patents [2].
中芯国际申请半导体结构及其形成方法专利,保证肖特基二极管的反向击穿电压
Sou Hu Cai Jing· 2025-04-23 03:54
Group 1 - The core viewpoint of the news is that Semiconductor Manufacturing International Corporation (SMIC) has applied for a patent related to semiconductor structures and their formation methods, indicating ongoing innovation in the semiconductor industry [1][3] - The patent application was filed on October 2023, with the publication number CN119815896A, highlighting the company's commitment to advancing semiconductor technology [1] - The patent describes a method that includes providing a substrate with a diode region, which consists of a first area and a second area surrounding it, aimed at improving the reverse breakdown voltage of Schottky diodes while reducing junction capacitance [1] Group 2 - SMIC Beijing was established in 2002, focusing on the manufacturing of computers, communications, and other electronic devices, with a registered capital of 100 million USD [1] - SMIC Beijing has made investments in one company, participated in 51 bidding projects, and holds 5000 patent records along with 226 administrative licenses [1] - SMIC Shanghai, founded in 2000, also specializes in the same sectors with a registered capital of 244 million USD, having invested in four companies and participated in 117 bidding projects, holding 5000 patents and 443 administrative licenses [2]