半导体结构及其形成方法

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中芯国际取得半导体结构及其形成方法专利
Jin Rong Jie· 2025-08-15 08:37
Core Insights - Semiconductor companies, specifically SMIC, have recently obtained a patent for "semiconductor structure and its formation method," indicating ongoing innovation in the industry [1] Company Overview - SMIC (Shanghai) was established in 2000 and is primarily engaged in the manufacturing of computers, communications, and other electronic devices, with a registered capital of 244 million USD [1] - SMIC (Beijing) was founded in 2002, also focusing on the manufacturing of computers, communications, and other electronic devices, with a registered capital of 100 million USD [1] Investment and Operations - SMIC (Shanghai) has made investments in 4 companies and participated in 127 bidding projects, holding 150 trademark records and 5000 patent records, along with 452 administrative licenses [1] - SMIC (Beijing) has invested in 1 company, participated in 52 bidding projects, holds 5000 patent records, and has 226 administrative licenses [1]
中芯国际申请半导体结构及其形成方法专利,降低在第二区的栅极层中产生缝隙、空洞等缺陷的概率
Sou Hu Cai Jing· 2025-08-09 11:36
Group 1 - The core viewpoint of the news is that Semiconductor Manufacturing International Corporation (SMIC) has applied for a patent related to semiconductor structures and their formation methods, indicating ongoing innovation in the semiconductor industry [1][3] - The patent application, published as CN120456589A, was filed on February 2024 and describes a semiconductor structure that includes a substrate with two regions having different device operating voltages [1] - The structure features fins located on the substrate, an isolation layer surrounding the fins, and two gate dielectric layers with different thicknesses, showcasing advancements in semiconductor technology [1] Group 2 - SMIC was established in 2000 and is based in Shanghai, primarily engaged in the manufacturing of computers, communications, and other electronic devices [2] - The company has a registered capital of 244 million USD and has made investments in four enterprises, participated in 127 bidding projects, and holds 5000 patent records [2] - Additionally, SMIC has 150 trademark records and possesses 451 administrative licenses, reflecting its extensive operational footprint in the semiconductor industry [2]
中芯国际申请半导体结构及其形成方法专利,提升半导体结构的制程效率
Sou Hu Cai Jing· 2025-08-02 09:03
Group 1 - Company Name: Semiconductor Manufacturing International Corporation (SMIC) has filed a patent for a semiconductor structure and its formation method, with publication number CN120413548A, applied on January 2024 [1] - The patent describes a method that includes forming a first part with at least a first metal layer, a dielectric layer, and a first interconnect structure, and a second part with a device structure, a second metal layer, and a second interconnect structure [1] - The bonding of the first and second parts allows for overlapping projection areas of the first and second metal layers, ensuring electrical connection between the first and second interconnect structures [1] Group 2 - SMIC Beijing was established in 2002 with a registered capital of 100 million USD, focusing on manufacturing in the computer, communication, and other electronic device sectors [2] - SMIC Shanghai was founded in 2000 with a registered capital of 244 million USD, also engaged in the same manufacturing sectors [2] - SMIC Beijing has participated in 52 bidding projects and holds 5000 patent records, while SMIC Shanghai has been involved in 127 bidding projects and also holds 5000 patent records [2]
中芯国际申请半导体结构及其形成方法专利,提高了光电传感器的集成度
Sou Hu Cai Jing· 2025-08-02 08:16
Group 1 - The core viewpoint of the news is that Semiconductor Manufacturing International Corporation (SMIC) has applied for a patent related to semiconductor structures and their formation methods, which aims to enhance the integration of photodetectors [1] - The patent application was filed for a semiconductor structure that includes a first substrate with multiple discrete photosensitive areas and an isolation trench containing a capacitive structure, which improves the optical isolation between adjacent photosensitive areas [1] - The capacitive structure is designed to reduce the size in the vertical direction relative to the first substrate, thereby increasing the integration level of the photodetector [1] Group 2 - SMIC Beijing was established in 2002 with a registered capital of 100 million USD and has participated in 52 bidding projects, holding 5000 patent records [2] - SMIC Shanghai was founded in 2000 with a registered capital of 244 million USD, involved in 127 bidding projects, and also holds 5000 patent records [2] - Both companies are primarily engaged in the manufacturing of computers, communications, and other electronic devices, with SMIC Shanghai having more administrative licenses (451) compared to SMIC Beijing (226) [2]
中芯国际申请半导体结构及其形成方法专利,使得硅鳍片和硅锗鳍片深度一致
Sou Hu Cai Jing· 2025-07-29 12:46
Core Viewpoint - Semiconductor Manufacturing International Corporation (SMIC) has applied for a patent related to semiconductor structures and their formation methods, indicating ongoing innovation in the semiconductor industry [1]. Company Summary - SMIC was established in 2000 and is located in Shanghai, primarily engaged in the manufacturing of computers, communications, and other electronic devices [1]. - The company has a registered capital of 244 million USD [1]. - SMIC has made investments in 4 companies and participated in 127 bidding projects [1]. - The company holds 150 trademark records and 5000 patent records, along with 451 administrative licenses [1]. Patent Details - The patent application, titled "Semiconductor Structure and Its Formation Method," was filed on January 2024, with the publication number CN120388891A [1]. - The semiconductor structure includes a semiconductor substrate with two regions: one with a silicon layer and the other with a silicon-germanium layer, both surfaces being flush [1]. - Fins are located in both regions, with equal heights, where the fins in the first region consist of part of the substrate and the silicon layer, while those in the second region consist of part of the substrate and the silicon-germanium layer [1].
中芯国际申请半导体结构及其形成方法专利,极大提升半导体结构的良率
Sou Hu Cai Jing· 2025-07-02 09:34
Group 1 - Company Name: Semiconductor Manufacturing International Corporation (SMIC) has filed a patent for a semiconductor structure and its formation method, with publication number CN120237113A, applied on December 2023 [1] - The patent describes a semiconductor structure that includes a substrate with interconnect through holes, first and second electrode layers, a dielectric layer, and a conductive layer, which enhances processing efficiency and yield [1] - The structure aims to reduce the thickness of the isolation layer within the interconnect through holes and prevent cracking of the conductive layer on the substrate's second surface, significantly improving the semiconductor structure's yield [1] Group 2 - SMIC Beijing was established in 2002, with a registered capital of $100 million, and has participated in 52 bidding projects and holds 5000 patent records [2] - SMIC Beijing has 226 administrative licenses and has made one external investment [2] - SMIC Shanghai was founded in 2000, with a registered capital of $244 million, and has participated in 127 bidding projects, holding 5000 patent records and 442 administrative licenses [2]
中芯国际申请半导体结构及其形成方法专利,在增加ESD结构的鲁棒性的同时,具有双向ESD保护特性
Sou Hu Cai Jing· 2025-05-24 06:42
Core Viewpoint - Semiconductor companies, specifically SMIC, are actively pursuing innovation through patent applications, indicating a focus on enhancing semiconductor structures and methods, which may strengthen their market position in the industry [1][2]. Group 1: Patent Application - SMIC has applied for a patent titled "Semiconductor Structure and Its Formation Method," with publication number CN120035224A, filed on November 2023 [1]. - The patent describes a semiconductor structure that includes a substrate with an insulating layer and an active region, featuring gate structures that enhance ESD (Electrostatic Discharge) robustness and provide bidirectional ESD protection [1]. Group 2: Company Overview - SMIC Beijing was established in 2002, focusing on manufacturing for computers, communications, and other electronic devices, with a registered capital of 100 million USD [2]. - SMIC Shanghai was founded in 2000, also in the same industry, with a registered capital of 244 million USD [2]. - SMIC Beijing has participated in 51 bidding projects and holds 5000 patent records, while SMIC Shanghai has engaged in 127 bidding projects and also possesses 5000 patents [2].
中芯国际申请半导体结构及其形成方法专利,提高半导体结构的可靠性
Sou Hu Cai Jing· 2025-05-20 01:26
Group 1 - Company Name: Semiconductor Manufacturing International Corporation (SMIC) has filed a patent for a semiconductor structure and its formation method, with publication number CN120018501A, applied on November 2023 [1] - The patent describes a semiconductor structure that includes a substrate, a floating gate layer, a cap layer, a gate insulating layer, and a control gate layer, with the cap layer having a higher dielectric constant than the gate insulating layer [1] - The innovation aims to improve the reliability and performance of the semiconductor structure by reducing charge accumulation at the corners of the floating gate layer through electrostatic induction effects [1] Group 2 - SMIC Beijing was established in 2002, focusing on the manufacturing of computers, communications, and other electronic devices, with a registered capital of 100 million USD [2] - SMIC Shanghai was founded in 2000, also engaged in the same industry, with a registered capital of 244 million USD [2] - Both companies have extensive patent portfolios, with each holding around 5000 patent records, and have participated in numerous bidding projects [2]
中芯国际申请半导体结构及其形成方法专利,保证肖特基二极管的反向击穿电压
Sou Hu Cai Jing· 2025-04-23 03:54
Group 1 - The core viewpoint of the news is that Semiconductor Manufacturing International Corporation (SMIC) has applied for a patent related to semiconductor structures and their formation methods, indicating ongoing innovation in the semiconductor industry [1][3] - The patent application was filed on October 2023, with the publication number CN119815896A, highlighting the company's commitment to advancing semiconductor technology [1] - The patent describes a method that includes providing a substrate with a diode region, which consists of a first area and a second area surrounding it, aimed at improving the reverse breakdown voltage of Schottky diodes while reducing junction capacitance [1] Group 2 - SMIC Beijing was established in 2002, focusing on the manufacturing of computers, communications, and other electronic devices, with a registered capital of 100 million USD [1] - SMIC Beijing has made investments in one company, participated in 51 bidding projects, and holds 5000 patent records along with 226 administrative licenses [1] - SMIC Shanghai, founded in 2000, also specializes in the same sectors with a registered capital of 244 million USD, having invested in four companies and participated in 117 bidding projects, holding 5000 patents and 443 administrative licenses [2]