Core Viewpoint - The article discusses the competitive landscape in semiconductor manufacturing, focusing on advancements by TSMC and Intel in their respective processes and technologies, particularly in the context of the A14 process node and High NA EUV lithography. TSMC Developments - TSMC is transitioning from FinFET to Nanosheet technology, with a focus on CFET (Complementary FET) devices for further miniaturization and power reduction [1][3] - TSMC showcased its first CFET transistor with a gate pitch of 48nm at the 2023 IEDM, marking a significant milestone in CFET technology [3] - The company is also exploring new interconnect technologies to enhance performance, including new via schemes and materials like graphene to reduce resistance and coupling capacitance [7] Intel Innovations - Intel's upcoming 14A process node, set for risk production in 2027, aims to reduce power consumption by up to 35% and improve performance per watt by 15% to 20% compared to the 18A node [8][9] - The introduction of Turbo Cell technology is designed to optimize critical paths in CPU and GPU designs, enhancing overall performance without compromising power efficiency [10][12] - Intel plans to utilize High NA EUV lithography for its 14A process, despite concerns over cost and complexity, while also maintaining a Low NA EUV alternative to mitigate risks [13][19] High NA EUV Strategy - TSMC has decided not to use High NA EUV for its A14 process due to cost concerns, opting for traditional 0.33 NA EUV technology instead [13][14] - Intel has installed a High NA EUV lithography machine and is committed to exploring its use in the 14A process, while ensuring compatibility with existing design rules to alleviate customer concerns [15][17] - The article highlights the ongoing debate over the cost-effectiveness of High NA EUV versus Low NA EUV, with Intel asserting that both processes can achieve similar yields [17][18]

如果您希望可以时常见面，欢迎标星收藏哦~ 今天，英特尔举办了晶圆代工大会，会上公司指出，正在与主要客户洽谈即将推出的14A工艺 节点（相当于1.4纳米），该节点是18A工艺节点的后续产品。英特尔已有多家客户计划流片 14A测试芯片。英特尔还透露，公司至关重要的18A节点目前已进入风险生产阶段，并计划于 今年晚些时候实现量产。 英特尔新的18A-P扩展节点（18A节点的高性能变体）目前正在晶圆厂早期生产。此外，该公司正 在开发一种新的18A-PT变体，该变体支持带有混合键合互连的Foveros Direct 3D，使该公司能够 在其最先进的前沿节点上垂直堆叠芯片。 在英特尔的新方案中，Foveros Direct 3D 技术是一项关键的进展，因为它提供了竞争对手台积电 （TSMC）已在生产中使用的功能，最著名的是 AMD 的 3D V-Cache 产品。事实上，英特尔的实 现在关键互连密度测量方面与台积电的产品不相上下。 在成熟节点方面，英特尔代工厂目前已在晶圆厂中完成其首个 16nm 生产流片，并且该公司目前 还在与联华电子合作开发的 12nm 节点吸引客户。 接下来，我们来看一下这家巨头的晶圆代工最新路线图 ...