Core Viewpoint - The National Intellectual Property Administration has upheld the validity of two core GaN patents held by InnoSemiconductor, which is significant for the company's ongoing patent infringement lawsuit against Infineon [1] Company Summary - InnoSemiconductor specializes in GaN power semiconductors and has recently been involved in a patent infringement lawsuit against Infineon based on the upheld patents [1]

Core Viewpoint - InnoScience (02577.HK) plans to raise funds through a placement of new H-shares, with a total expected amount of HKD 1.56 billion, aimed at capacity expansion, debt repayment, and working capital [1][2]. Fund Allocation - Approximately 31% of the funds (HKD 482 million, about RMB 442 million) will be used for capacity expansion and product upgrades to meet the growing demand in the GaN power device market [1][2]. - About 24% of the funds (HKD 376 million, about RMB 344 million) will be allocated to repay interest-bearing debts, optimizing the capital structure and reducing financial risk [2]. - Approximately 45% of the funds (HKD 691 million, about RMB 633 million) will be used for working capital and general corporate purposes, including human resources expenses and potential investments [2]. Company Overview - InnoScience, established in 2017, focuses on the research and manufacturing of third-generation semiconductor GaN chips, with a market share of 42.4% in the global GaN power semiconductor sector [2]. - The company is the first globally to achieve mass production of 8-inch silicon-based GaN wafers, significantly improving yield and reducing costs compared to 6-inch wafers [2]. Industry Outlook - The GaN power semiconductor market is expected to grow rapidly, reaching a market size of RMB 50.1 billion by 2028, accounting for 10.1% of the global power semiconductor market [3]. - GaN technology offers advantages over traditional silicon materials, making it suitable for applications in electric vehicles, data centers, and photovoltaic power stations [3].

Company Overview - InnoSilicon is a leading global manufacturer of Gallium Nitride (GaN) power semiconductors, operating under an Integrated Device Manufacturer (IDM) model. The company is the first in the world to achieve mass production of 8-inch silicon-based GaN wafers and is one of the few companies offering a full voltage range of GaN semiconductor products from 15V to 1200V. According to Frost & Sullivan, InnoSilicon ranked first in global GaN power semiconductor companies by revenue in 2023, with a market share of 33.7% [1][2][3]. Business, Products, and Technology Analysis Main Products - InnoSilicon's product line includes GaN wafers, GaN discrete devices, integrated chips, and modules. The GaN wafers are produced on an 8-inch GaN-on-Si production line, supporting high, medium, and low voltage requirements. The GaN discrete devices cover a voltage range of 15V-1200V, including GaN HEMT, catering to various application scenarios. The integrated chips, such as the ISG612XTD SolidGaN IC series, combine GaN devices, gate drivers, and multiple protection circuits, achieving low on-resistance and high switching frequency [1][2]. Technical Features - InnoSilicon has significant technical advantages, being the first to achieve large-scale production of 8-inch silicon-based GaN wafers, which offers notable efficiency and cost control compared to 4-inch and 6-inch lines. The company holds over 800 patents, and its products exhibit high reliability, low on-resistance, low gate charge, and compact packaging. The third-generation 700V enhanced GaN power device series is set to launch in 2025, featuring a 30% reduction in chip area and a 20-30% improvement in switching performance [2][3]. Production Capacity - InnoSilicon currently has a monthly production capacity of 13,000 8-inch GaN wafers, making it the largest production base for 8-inch GaN wafers globally. The company plans to increase this capacity to 20,000 wafers per month by the end of 2025, with a long-term goal of reaching 70,000 wafers per month [3]. Downstream Applications - InnoSilicon has established close partnerships with major smartphone manufacturers like OPPO, vivo, and Xiaomi, with its products used in mobile OVP and fast charging applications. In 2022, the company successfully integrated its 40V bidirectional VGaN™ chip into OPPO smartphones, marking a significant milestone. In the electric vehicle sector, CATL became InnoSilicon's largest customer in 2022, with sales reaching 190 million yuan in 2023. The company also collaborates with other EV manufacturers for automotive-grade products [3][4]. Industry Outlook - The global GaN power semiconductor market has rapidly grown from 139.4 million yuan in 2019 to 1,759.5 million yuan in 2023, with a compound annual growth rate (CAGR) of 88.5%. The market is expected to experience exponential growth, projected to reach 3,227.7 million yuan in 2024 and 50,141.9 million yuan by 2028, with a CAGR of 98.5%. Consumer electronics and electric vehicles are anticipated to be the two major application scenarios during this period [5]. Competitive Landscape - The global power semiconductor industry is highly concentrated, with the top ten companies holding a combined market share of 66.9%. InnoSilicon's revenue from GaN power semiconductor business reached 592.7 million yuan in 2023, ranking first globally with a market share of 33.7%. The top five companies collectively account for 92.8% of the market share, with InnoSilicon being a key player alongside competitors like Infineon, EPC, Navitas, and Power Integrations [8][10].